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Structural and morphological analysis of thin films for microelectronic application by X-ray diffraction, X-ray reflectivity, Total reflection X-ray fluorescence. Study of atomic layer deposition phenomena for the deposition of oxydes. Study of chalcogenide compounds
Scientific Production
Brush Layers of Bioinspired Polypeptoids for Deterministic Doping of Semiconductors
ACS Applied Electronic Materials [American Chemical Society], Volume: 4 Issue: 12 Pages: 6029-6037
ACS Applied Polymer Materials [American Chemical Society], Volume: 4 Issue: 10 Pages: 7191-7203
IEEE Transactions on Electron Devices [IEEE], Volume: 69 Issue: 8 Pages: 4342 - 4348
ACS Applied Materials & Interfaces [American Chemical Society],
Interface Analysis of MOCVD Grown GeTe/Sb2Te3 and Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires
Nanomaterials [MDPI], Volume: 12 Issue: 10 Pages: 1623
Synthesis, Properties and Applications of Germanium Chalcogenides [s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affil-iations.], Pages: 135
Phase Change Ge-Rich Ge–Sb–Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition
Nanomaterials [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 12 Pages: 3358
Raman Spectroscopy and In Situ XRD Probing of the Thermal Decomposition of Sb2Se3 Thin Films
The Journal of Physical Chemistry C [American Chemical Society],
Crystal Growth & Design [American Chemical Society], Volume: 21 Issue: 9 Pages: 5135-5144
Large-Area MOVPE Growth of Topological Insulator Bi2Te3 Epitaxial Layers on i-Si(111)
Crystal Growth & Design [American Chemical Society], Volume: 21 Issue: 7 Pages: 4023-4029
MOCVD Growth of GeTe/Sb2Te3 Core–Shell Nanowires
Coatings [Multidisciplinary Digital Publishing Institute], Volume: 11 Issue: 6 Pages: 718
Vapor phase epitaxy of antimonene-like nanocrystals on germanium by an MOCVD process
Applied Surface Science [North-Holland], Volume: 535 Pages: 147729
Advanced Functional Materials [Wiley-VCH], Pages: 2109361
Fe/Sb2Te3 Interface Reconstruction through Mild Thermal Annealing
Advanced Materials Interfaces [], Volume: 7 Issue: 19 Pages: 2000905
Vapor phase epitaxy of antimonene-like nanocrystals on germanium by an MOCVD process
Applied Surface Science [North-Holland], Volume: 535 Pages: 147729
Journal of Magnetism and Magnetic Materials [North-Holland], Volume: 509 Pages: 166885
ALD growth of ultra-thin Co layers on the topological insulator Sb 2 Te 3
Nano Research [Tsinghua University Press], Volume: 13 Issue: 2 Pages: 570-575
Epitaxial and large area Sb 2 Te 3 thin films on silicon by MOCVD
RSC Advances [Royal Society of Chemistry], Volume: 10 Issue: 34 Pages: 19936-19942
High‐Density Sb2Te3 Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growth
Small [], Volume: 15 Issue: 37 Pages: 1901743
Chemical, structural and magnetic properties of the Fe/Sb2Te3 interface
Journal of Magnetism and Magnetic Materials [North-Holland], Volume: 474 Pages: 632-636
In-doped Sb nanowires grown by MOCVD for high speed phase change memories.
Micro and Nano Engineering [Elsevier], Volume: 2 Pages: 117-121
In-doped Sb nanowires grown by MOCVD for high speed phase change memories
Micro and Nano Engineering [Elsevier], Volume: 2 Pages: 117-121
Chemical, structural and magnetic properties of the Fe/Sb2Te3 interface
Journal of Magnetism and Magnetic Materials [North-Holland],
Sensors and Actuators A: Physical [Elsevier], Volume: 282 Pages: 124-131
ACS Applied Nano Materials [American Chemical Society], Volume: 1 Issue: 9 Pages: 4633-4641
Materials Research Letters [Taylor & Francis], Volume: 6 Issue: 1 Pages: 29-35
Weak Antilocalization in Granular Sb2Te3 Thin Films Deposited by MOCVD
physica status solidi (RRL)–Rapid Research Letters [WILEY? VCH Verlag Berlin GmbH], Pages: 1800155
Weak Antilocalization in Granular Sb2Te3 Thin Films Deposited by MOCVD
physica status solidi (RRL)–Rapid Research Letters [WILEY? VCH Verlag Berlin GmbH], Pages: 1800155
Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films.
Scientific reports [Nature Publishing Group], Volume: 7 Issue: 1 Pages: 1-12
Materials Research Letters [Taylor & Francis], Volume: 6 Issue: 1 Pages: 29-35
Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires
Applied Physics Letters [AIP Publishing LLC], Volume: 109 Issue: 21 Pages: 213103
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [American Vacuum Society], Volume: 34 Issue: 5 Pages: 051510
Evolution of thermal conductivity of In3Sbβ Teγ thin films up to 550° C
physica status solidi (RRL)–Rapid Research Letters [WILEY‐VCH Verlag Berlin GmbH], Volume: 10 Issue: 7 Pages: 544-548
Applied Surface Science [North-Holland], Volume: 368 Pages: 470-476
Atomic Layer Deposition of hexagonal ErFeO 3 thin films on SiO 2/Si
Thin Solid Films [Elsevier], Volume: 604 Pages: 18-22
MOCVD growth and structural characterization of In–Sb–Te nanowires
physica status solidi (a) [], Volume: 213 Issue: 2 Pages: 335-338
A Novel Sb2Te3 Polymorph Stable at the Nanoscale
Chemistry of Materials [American Chemical Society], Volume: 27 Issue: 12 Pages: 4368-4373
Solid-state dewetting of ultra-thin Au films on SiO {sub 2} and HfO {sub 2}
Nanotechnology [], Volume: 25
Solid-state dewetting of ultra-thin Au films on SiO2 and HfO2
Nanotechnology [IOP Publishing], Volume: 25 Issue: 49 Pages: 495603
Effect of a thin Ti interfacial layer on the thermal resistance of Ge2Sb2Te5-TiN stack
Applied Physics Letters [AIP Publishing LLC], Volume: 105 Issue: 12 Pages: 121903
Thin Solid Films [Elsevier], Volume: 563 Pages: 44-49
Thin solid films [Elsevier], Volume: 563 Pages: 44-49
Thin Solid Films [], Volume: 563
Thermal properties of In–Sb–Te films and interfaces for phase change memory devices
Microelectronic engineering [Elsevier], Volume: 120 Pages: 3-8
Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition
Journal of Applied Physics [American Institute of Physics], Volume: 115 Issue: 17 Pages: 17D907
ACS applied materials & interfaces [American Chemical Society], Volume: 6 Issue: 5 Pages: 3455-3461
Effect of nitrogen doping on the thermal conductivity of GeTe thin films
physica status solidi (RRL)–Rapid Research Letters [WILEY‐VCH Verlag], Volume: 7 Issue: 12 Pages: 1107-1111
High temperature thermal conductivity of amorphous Al2O3 thin films grown by low temperature ALD
Advanced Engineering Materials [], Volume: 15 Issue: 11 Pages: 1046-1050
Structural and electrical analysis of In–Sb–Te‐based PCM cells
physica status solidi (RRL)–Rapid Research Letters [WILEY‐VCH Verlag], Volume: 7 Issue: 11 Pages: 1009-1013
High Temperature Thermal Conductivity of Amorphous Al2O3 Thin Films Grown by Low Temperature ALD
Advanced Engineering Materials [], Volume: 15 Issue: 11 Pages: 1046-1050
ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 2 Issue: 9 Pages: P395
Thermal resistance at Al-Ge2Sb2Te5 interface
Applied Physics Letters [American Institute of Physics], Volume: 102 Issue: 18 Pages: 181907
Au-catalyzed synthesis and characterisation of phase change Ge-doped Sb–Te nanowires by MOCVD
Journal of crystal growth [North-Holland], Volume: 370 Pages: 323-327
Atomic layer-deposited Al–HfO 2/SiO 2 bi-layers towards 3D charge trapping non-volatile memory
Thin Solid Films [Elsevier], Volume: 533 Pages: 9-14
Thin solid films [Elsevier], Volume: 533 Pages: 66-69
Applied Physics Letters [American Institute of Physics], Volume: 102 Issue: 13 Pages: 131603
ECS Transactions [IOP Publishing], Volume: 50 Issue: 13 Pages: 11
Inverse Problems in Science and Engineering [Taylor & Francis Group], Volume: 20 Issue: 7 Pages: 941-950
Electronic properties of crystalline Ge1-xSbxTey thin films
Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 10 Pages: 102105
XPS composition study of stacked Si oxide/Si nitride/Si oxide nano‐layers
Surface and interface analysis [John Wiley & Sons, Ltd], Volume: 44 Issue: 8 Pages: 1209-1213
Journal of Applied Physics [American Institute of Physics], Volume: 112 Issue: 1 Pages: 014107
Semiconductor Science and Technology [IOP Publishing], Volume: 27 Issue: 7 Pages: 074013
ECS Meeting Abstracts [IOP Publishing], Issue: 28 Pages: 2457
Chemistry of Materials [American Chemical Society], Volume: 24 Issue: 6 Pages: 1080-1090
Metal organic chemical vapor deposition of phase change Ge1Sb2Te4 nanowires
Nano letters [American Chemical Society], Volume: 12 Issue: 3 Pages: 1509-1515
Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0. 53Ga0. 47As
Journal of The Electrochemical Society [The Electrochemical Society], Volume: 159 Issue: 3 Pages: H220-H224
Atomic layer deposition of Al-doped ZrO2 thin films as gate dielectric for In0. 53Ga0. 47As
Journal of The Electrochemical Society [IOP Publishing], Volume: 159 Issue: 3 Pages: H220
Applied Physics Letters [American Institute of Physics], Volume: 99 Issue: 23 Pages: 232907
Applied physics express [IOP Publishing], Volume: 4 Issue: 9 Pages: 094103
Detection of the tetragonal phase in atomic layer deposited La-doped ZrO2 thin films on germanium
Journal of The Electrochemical Society [IOP Publishing], Volume: 158 Issue: 8 Pages: G194
Dynamics of laser-induced phase switching in GeTe films
Journal of Applied Physics [American Institute of Physics], Volume: 109 Issue: 12 Pages: 123102
ECS Transactions [IOP Publishing], Volume: 35 Issue: 3 Pages: 481
Atomic Layer Deposition of Al-Doped ZrO2 Thin Films for Advanced Gate Stack on III-V Substrates
ECS Transactions [IOP Publishing], Volume: 35 Issue: 3 Pages: 431
Structural and electrical properties of Er-doped HfO 2 and of its interface with Ge (001)
Microelectronic engineering [Elsevier], Volume: 88 Issue: 4 Pages: 415-418
Microelectronic engineering [Elsevier], Volume: 88 Issue: 4 Pages: 419-422
Au-catalyzed self assembly of GeTe nanowires by MOCVD
Journal of crystal growth [North-Holland], Volume: 315 Issue: 1 Pages: 152-156
Journal of Physics: Conference Series [IOP Publishing], Volume: 278 Issue: 1 Pages: 012024
Applied Physics Express [], Volume: 4 Pages: 094103
O 3-based atomic layer deposition of hexagonal La 2 O 3 films on Si (100) and Ge (100) substrates
Journal of Applied Physics [American Institute of Physics], Volume: 108 Issue: 8 Pages: 084108
Evaluation of HfLaOx as Blocking Layer for Innovative Nonvolatile Memory Applications
ECS Transactions [IOP Publishing], Volume: 33 Issue: 3 Pages: 417
LaHfOx Films Analyses for NVM Applications
ECS Meeting Abstracts [IOP Publishing], Issue: 22 Pages: 1523
LaHfOx Films Analyses for NVM Applications
Meeting Abstracts [The Electrochemical Society], Issue: 22 Pages: 1523-1523
Ultraviolet optical near-fields of microspheres imprinted in phase change films
Applied physics letters [American Institute of Physics], Volume: 96 Issue: 19 Pages: 193108
Applied Physics Letters [American Institute of Physics], Volume: 96 Issue: 18 Pages: 182901
Journal of Physics: Conference Series [IOP Publishing], Volume: 214 Issue: 1 Pages: 012102
Rare earth-based high-k materials for non-volatile memory applications
Microelectronic engineering [Elsevier], Volume: 87 Issue: 3 Pages: 290-293
Journal of Physics. Conference Series (Online) [], Volume: 214
Thermal characterization of the Si O 2-Ge 2 Sb 2 Te 5 interface from room temperature up to 400° C
Journal of Applied Physics [American Institute of Physics], Volume: 107 Issue: 4 Pages: 044314
Si nanocrystal synthesis in HfO {sub 2}/SiO/HfO {sub 2} multilayer structures
Nanotechnology (Print) [], Volume: 21
Si nanocrystal synthesis in HfO2/SiO/HfO2 multilayer structures
Nanotechnology [IOP Publishing], Volume: 21 Issue: 5 Pages: 055606
Applied Physics Letters [American Institute of Physics], Volume: 95 Issue: 12 Pages: 122902
Process dependence of BTI reliability in advanced HK MG stacks
Microelectronics Reliability [Pergamon], Volume: 49 Issue: 9-11 Pages: 982-988
Dehydrogenation at the Fe/Lu 2 O 3 interface upon rapid thermal annealing
Journal of Magnetism and Magnetic Materials [North-Holland], Volume: 321 Issue: 15 Pages: 2350-2353
Dehydrogenation at the Fe/Lu2O3 interface upon rapid thermal annealing
Journal of magnetism and magnetic materials [North-Holland], Volume: 321 Issue: 15 Pages: 2350-2353
Thermal and electrical characterization of materials for phase-change memory cells
Journal of Chemical & Engineering Data [American Chemical Society], Volume: 54 Issue: 6 Pages: 1698-1701
Chemical and structural properties of a TaN/HfO2 gate stack processed using atomic vapor deposition
Journal of The Electrochemical Society [IOP Publishing], Volume: 156 Issue: 7 Pages: G78
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [American Vacuum Society], Volume: 27 Issue: 2 Pages: L1-L7
Journal of Applied Physics [American Institute of Physics], Volume: 105 Issue: 3 Pages: 033520
Hot-wire chemical vapor growth and characterization of crystalline GeTe films
Journal of crystal growth [North-Holland], Volume: 311 Issue: 2 Pages: 362-367
Journal of The Electrochemical Society [The Electrochemical Society], Volume: 156 Issue: 1 Pages: H1-H6
Journal of the Electrochemical Society [], Volume: 156 Issue: 1 Pages: H1
Chemical and Structural Properties of a TaN
Journal of the Electrochemical Society [Electrochemical Society], Volume: 156 Issue: 7
Chemical vapor deposition of chalcogenide materials for phase-change memories
Microelectronic Engineering [Elsevier], Volume: 85 Issue: 12 Pages: 2338-2341
Microelectronic Engineering [Elsevier], Volume: 85 Issue: 12 Pages: 2425-2429
Microelectronic Engineering [Elsevier], Volume: 85 Issue: 12 Pages: 2414-2419
Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications
Journal of Crystal Growth [North-Holland], Volume: 310 Issue: 23 Pages: 5053-5057
Materials Science in Semiconductor Processing [Pergamon], Volume: 11 Issue: 5 Pages: 236-240
Journal of The Electrochemical Society [IOP Publishing], Volume: 156 Issue: 1 Pages: H1
ALD-Grown Rare Earth Oxides for Advanced Gate Stacks
ECS Transactions [IOP Publishing], Volume: 13 Issue: 1 Pages: 77
Interface Study in a" Metal/High-k" Gate Stack: Tantalum Nitride on Hafnium Oxide
ECS Transactions [IOP Publishing], Volume: 16 Issue: 5 Pages: 99
Epitaxial anatase HfO 2 on high-mobility substrate for ultra-scaled CMOS devices
Materials science in semiconductor processing [Pergamon], Volume: 11 Issue: 5-6 Pages: 241-244
Materials science in semiconductor processing [Pergamon], Volume: 11 Issue: 5-6 Pages: 236-240
Thin Solid Films [Elsevier], Volume: 516 Issue: 22 Pages: 7962-7966
Journal of The Electrochemical Society [IOP Publishing], Volume: 155 Issue: 10 Pages: H807
Hot-wire chemical vapor deposition of chalcogenide materials for phase change memory applications
Chemistry of Materials [American Chemical Society], Volume: 20 Issue: 11 Pages: 3557-3559
Epitaxial growth of cubic Gd2O3 thin films on Ge substrates
Journal of Physics: Conference Series [IOP Publishing], Volume: 100 Issue: 4 Pages: 042048
Reproducibility in X-ray reflectometry: results from the first world-wide round-robin experiment
Journal of Applied Crystallography [International Union of Crystallography], Volume: 41 Issue: 1 Pages: 143-152
Amorphization dynamics of Ge 2 Sb 2 Te 5 films upon nano-and femtosecond laser pulse irradiation
Journal of Applied Physics [American Institute of Physics], Volume: 103 Issue: 2 Pages: 023516
Reproducability in X-Ray reflectometry: results from the first reflectivity round robin
Journal of Applied Crystallography [], Volume: 41 Pages: 143-15
Epitaxial phase of hafnium dioxide for ultrascaled electronics
Physical Review B [American Physical Society], Volume: 76 Issue: 15 Pages: 155405
ECS Transactions [IOP Publishing], Volume: 11 Issue: 4 Pages: 497
ECS Meeting Abstracts [IOP Publishing], Issue: 20 Pages: 1160
Zeitschrift für anorganische und allgemeine Chemie [WILEY‐VCH Verlag], Volume: 633 Issue: 11‐12 Pages: 2097-2103
Microelectronic engineering [Elsevier], Volume: 84 Issue: 9-10 Pages: 1886-1889
Microelectronic engineering [Elsevier], Volume: 84 Issue: 9-10 Pages: 2263-2266
Journal of Applied Physics [American Institute of Physics], Volume: 102 Issue: 3 Pages: 034513
An accurate low-frequency model for the 3 ω method
Journal of Applied Physics [American Institute of Physics], Volume: 101 Issue: 10 Pages: 104510
Applied physics letters [American Institute of Physics], Volume: 90 Issue: 19 Pages: 193511
Nondestructive diagnostics of high-κ dielectrics for advanced electronic devices
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 18 Pages: 183521
ECS Transactions [IOP Publishing], Volume: 3 Issue: 3 Pages: 183
Atomic layer deposition of Lu silicate films using [(Me3Si) 2N] 3Lu
Journal of The Electrochemical Society [IOP Publishing], Volume: 153 Issue: 11 Pages: F271
Germanium diffusion during Hf O 2 growth on Ge by molecular beam epitaxy
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 12 Pages: 122906
Temperature dependence of transient and steady-state gate currents in Hf O 2 capacitors
Applied physics letters [American Institute of Physics], Volume: 89 Issue: 10 Pages: 103504
Ozone-based atomic layer deposition of alumina from TMA: Growth, morphology, and reaction mechanism
Chemistry of materials [American Chemical Society], Volume: 18 Issue: 16 Pages: 3764-3773
High-k materials in flash memories
ECS Transactions [IOP Publishing], Volume: 1 Issue: 5 Pages: 91
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 246 Issue: 1 Pages: 90-95
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 246 Issue: 1 Pages: 90-95
Site of Mn in Mn δ-doped GaAs: X-ray absorption spectroscopy
Physical Review B [American Physical Society], Volume: 73 Issue: 3 Pages: 035314
Emerging non-volatile memories
IEDM Short Course [], Volume: 274 Issue: 5
Emerging non-volatile memories
IEDM Short Course [], Volume: 274 Issue: 5
Self-annealing and aging effect characterization on copper seed thin films
Microelectronic engineering [Elsevier], Volume: 82 Issue: 3-4 Pages: 289-295
Applied Physics Letters [American Institute of Physics], Volume: 87 Issue: 11 Pages: 112904
Journal of applied physics [American Institute of Physics], Volume: 97 Issue: 7 Pages: 074315
International Heat Transfer Conference Digital Library [Begel House Inc.],
Simulation of micro-mirrors for optical MEMS
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) [IEEE], Pages: 81-84
MOCVD growth and thermal analysis of Sb2Te3thin films and nanowires
2015 1st Workshop on Nanotechnology in Instrumentation and Measurement (NANOFIM) [IEEE], Pages: 150-154
MOCVD growth and thermal analysis of Sb2Te3thin films and nanowires
2015 1st Workshop on Nanotechnology in Instrumentation and Measurement (NANOFIM) [IEEE], Pages: 150-154
Thermal Properties of In-Sb-Te Thin Films for Phase Change Memory Application
Advances in Science and Technology [Trans Tech Publications Ltd], Volume: 95 Pages: 113-119
Overview of early publications on atomic layer deposition
14th International Conference on Atomic Layer Deposition, ALD 2014 [American Vacuum Society (AVS)],
2009 IEEE International Reliability Physics Symposium [IEEE], Pages: 362-366
2007 IEEE International Electron Devices Meeting [IEEE], Pages: 775-778
Amorphization dynamics of Ge 2 Sb 2 T3 5 films under nano-and femtosecond laser pulse irradiation
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on [IEEE], Pages: 1-1
Amorphization dynamics of Ge2Sb2Te5 films under nano- and femtosecond laser pulse irradiation
The European Conference on Lasers and Electro-Optics [Optical Society of America], Pages: CC4_5
Nano-scale characterization of high-k dielectric materials by conducting atomic force microscopy
14th International Winterschool on New Developments in Solid State Physics [],
Photothermal Radiometry applied in nanoliter melted tellurium alloys
Materials Challenges and Testing for Supply of Energy and Resources [Springer, Berlin, Heidelberg], Pages: 273-283
Mössbauer spectroscopy study of interfaces for spintronics
ISIAME 2008 [Springer, Berlin, Heidelberg], Pages: 371-376
Electrical characterization of rare earth oxides grown by atomic layer deposition
Rare Earth Oxide Thin Films [Springer, Berlin, Heidelberg], Pages: 203-223
Physical, Chemical, and Electrical Characterization of High-κ Dielectrics on Ge and GaAs
Advanced Gate Stacks for High-Mobility Semiconductors [Springer, Berlin, Heidelberg], Pages: 181-209
CEMS characterisation of Fe/high-κ oxide interfaces
ICAME 2005 [Springer, Berlin, Heidelberg], Pages: 1349-1353