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Type: 
Conference
Description: 
A systematic study of mobility performances and Bias Temperature Instability (BTI) reliability was done on a large variety of advanced dielectric stacks. We clearly demonstrate that mobility performances and NBTI reliability are strongly correlated and that they are affected by the diffusion of nitrogen species N at the Si interface. Reducing the metal gate thickness favors the reduction of mobility degradations and NBTI, but, also strongly enhances PBTI, due to a complex set of reactions in the gate oxide. An optimum gate thickness must be found to obtain an acceptable trade off between device performance and reliability requirements.
Publisher: 
IEEE
Publication date: 
26 Apr 2009
Authors: 

X Garros, M Casse, C Fenouillet-Beranger, G Reimbold, F Martin, C Gaumer, C Wiemer, M Perego, F Boulanger

Biblio References: 
Pages: 362-366
Origin: 
2009 IEEE International Reliability Physics Symposium