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Depth resolved cathodoluminescence study of optical transitions in MOVPE grown hexagonal GaN

G Salviati, F Rossi, N Armani, L Lazzarini, L Nasi, V Grillo, A Passaseo, R Cingolani, M Longo, O Martinez

2018-01-18

Biblio references: Pages: 251-254

Origin: Microscopy of Semiconducting Materials 2001
Encapsulated Silicene Field-Effect Transistors

Li Tao, Eugenio Cinquanta, Carlo Grazianetti, Alessandro Molle, Deji Akinwande

2018-01-01

Biblio references: Pages: 235-254

Origin: Silicene
Silicene in the Flatland

C Grazianetti, A Molle

2017-01-01

Biblio references: Pages: 137-152

Origin: GraphITA
Group IV Semiconductor 2D Materials

Alessandro Molle, Dimitra Tsoutsou, Athanasios Dimoulas

2016-04-01

Biblio references: Volume: 17 Pages: 349

Origin: 2D Materials for Nanoelectronics
2D Materials for Nanoelectronics

Michel Houssa, Athanasios Dimoulas, Alessandro Molle

2016-04-01

Biblio references: Pages: 1-467

Origin:
Ultrafast dynamics in epitaxial silicene on Ag (111)

Eugenio Cinquanta, SD Conte, Daniele Chiappe, Carlo Grazianetti, Marco Fanciulli, Alessandro Molle, Giulio Cerullo, Salvatore Stagira, Francesco Scotognella, Caterina Vozzi

2015-01-01

Biblio references: Pages: 329-332

Origin: Ultrafast Phenomena XIX
Recent developments in the manipulation of magnetic domain walls in CoFeB–MgO wires for applications to high-density nonvolatile memories

D Ravelosona, L Herrera Diez, W Zhao, M Klaui, B Ockert, R Mantovan, A Lamperti, L Baldi, V Jacques, L Vila, R Cowburn

2015-01-01

Biblio references: Pages: 333-378

Origin: Magnetic Nano-and Microwires
Emission Mössbauer Spectroscopy of Mn/Fe-Implanted III-Nitrides

H Masenda, D Naidoo, M Ncube, K Baruth-Ram, PH Gunnlaugsson, G Weyer, R Mantovan, K Johnston, T Mølholt, HP Gislason, S Ólafsson, G Lancouche

2015-01-01

Biblio references: Pages: 577-578

Origin: Exotic Nuclei: Proceedings of the First International African Symposium
Nanowire phase change memory (PCM) technologies: properties and performance

M Longo

2014-01-01

Biblio references: Pages: 231-261

Origin: Advances in Non-Volatile Memory and Storage Technology
Nanowire phase change memory (PCM) technologies: principles, fabrication and characterization techniques

M Longo

2014-01-01

Biblio references: Pages: 200-230

Origin: Advances in Non-Volatile Memory and Storage Technology

Pages