Primary tabs

-A A +A
Surname: 
Molle
Firstname: 
Alessandro
Position: 
Staff
Profile: 
Research Director
Phone: 
+39 0396037613
Curriculum: 

 

Contacts

e-mail: alessandro.molle@cnr.it

Skype ID: alessandro_molle

X: @AlessandroMolle

Website: https://alessandromolle.wixsite.com/xfab 

 

ORCID ID: 0000-0002-3860-4120

ResearcherID:  D-8952-2013

Scopus Author ID:  15123116600

 

News

 

Alessandro Molle is among the meeting chairs at the MRS 2024 Fall Meeting

 

 

 

 

Alessandro Molle in ​the list of       

      2022 World's Top 2% Scientists       

2021 World’s Top 2% Scientists 

 released by the Stanford University.

 

 

 

 

 

 

 

 

 

Alessandro Molle recognised 

as 2022 RSC Outstanding Reviewers

for journal Nanoscale and Nanoscale Horizons.

 

 

 

 

 

The Book of the Xenes

 

by Alessandro Molle & Carlo Grazianetti (Eds.)

(July 1st, 2022)

This is the first full-comprehensive book of the Xenes. You can find the updated list of nowadays available Xenes, and all their relevant properties and applications.

Available for purchase at the Elsevier website.

 

 

 

 

 

Job Openings

Post-Doc positions available on:
Epitaxy of silicene by intercalation through a MoS2 layer
Requested skills: MBE, in situ UHV-based characterization (LEED, Auger, XPS, RHEED), STM, and AFM.
See more details here.
 
PhD positions on:
- Molecular beam epitaxy of 2D elementary materials
- 2D and topological materials for THz applications
​
MSc positions available on:
-    Scanning tunneling microscopy investigation of Xenes grown by molecular beam epitaxy;
-    Molecular beam epitaxy of Xene layers and heterostructures;
-    Chemical vapor deposition of transition metal dichalcogenides for nanoelectronics;
-    Chemical vapor deposition of 2D materials for THz and far-IR applications; 
-    Processing and nanofabrication of electronic and optoelectronic devices based on 2D materials;
-    Opto-thermo-electrical, chemical and structural characterization of 2D materials.
 
 
Contact:  Alessandro Molle
 

 

 PI of:

ERC CoG 2017 "XFab" Grant N. 772261

ERC PoC 2022 "XMem" Grant N. 101069262

 

Press release, @StampaCnr

https://www.cnr.it/it/intervento-presidente/7799/assegnato-al-cnr-un-consolidator-grant-dell-erc

 

 

 

 

Xenes on the media

TV & Radio & Social Media

CNR-IMM YT channel: Il Silicene e nuovi materiali: una rivoluzione per la nanotecnologia? (IT speaking)

RaiPlay - Superquark+ (Sept. 2020) [ita]

Rai 3 - TGLeonardo (2019) [ita]

RaiPlay - Rai Cultura (2019) [ita]

E-MRS Tv (2019) [eng]

Rai1-UnoMattina (11 Dec 2017) [ita]

Rad io3 [ita]

Radio24 "SmartCity" (8 March 2017)

 

Newspapers

Il Sole24Ore "Scenari" (2 March 2020)

La Stampa "TuttoScienze" (2018)

Il Sole24Ore "Nova" (3 Dec 2017)

 

 

 

 

About

Short Bio. Alessandro Molle graduated in 2001 at the University of Genova (Italy) with a master thesis on the nanocrystal formation during the homoepitaxial growth Al/Al(110). He obtained the PhD degree in Materials Science at the same University in April, 2005 with a thesis on metal nanostructure. In February 2005, he joined the MDM National Laboratory (formerly with INFM, now with the CNR-IMM) as a Post-Doc Fellow involved in the Molecular Beam Epitaxial Growth of high-k oxide thin films on semiconductor and of semiconductor thin films on metal oxides within the European Project ET4US. He was then involved in the surface passivation of high-mobility semiconductors (Ge and III-V compunds), for the subsequent deposition of high-k materials targeting ultra-scaled metal oxide semiconductor (MOS) structures for a Post-Si era of digital devices (in the framework of bilateral collaboration projects with IMEC, Belgium).

He was the principal investigator at CNR-IMM in the research activity related to the European Project "2D-Nanolattices: Strongly Anisotropic Graphite-like Semiconductor-Dielectric 2D Nanolattices" started from June 1st, 2011.The core-idea of that activity is to identify the basic properties of the epitaxial silicene, namely the silicon counterpart of graphene, including the structural arrangement, the elelctronic state, and the vibrational spectrum. Integration of epitaxial silicene in a field effect transistor has been achieved in collaboration with the group of Prof. Akinwande, Univ. of Texas at Austin. He currently supervised the unit activity on 2D materials beyond graphene including the epitaxial growth of Xenes (silicene, germanene, stanene, and phosphorene) on substrates, and the chemical vapor deposition of flat and patterned nanosheets of transistion metal dichalcogenides (MoS2, WS2, etc.). He has been awarded an ERC-COG 2017 grant (XFab) on the fabrication and technological implementation of Xenes and an ERC-PoC 2022 grant (XMem).

He served as a co-chair of the academic course "Surface and Interface" with Prof. M. Fanciulli from 2011 to 2015 (3 years) and as a chair of a PhD course (2018) on 2D Materials at the University of Milano Bicocca. He has been co-editor of the book "2D Materials for Nanoelectronics", published by CRC Press (Taylor&Francis group) on April 2016, and co-editor of the book "Xenes", published by Elsevier, Woodhead Publishing on July 2022. He will be NM06 Symposium organizer at the MRS 2020 Spring Meeting in Phoenix, and co-director of the Epioptics-16&Xene-4 Intnl School in Erice, July 2019. He will be serving as meeting chair at the MRS 2024 Fall Meeting. Since 2022, he serves as deputy editor for "Research", a Science (AAAS) partner journal.
 

Skills. Molecular Beam Epitaxy (MBE) and in situ surface characterization (RHEED, XPS, LEIS, STM);

Admittance spectroscopy and electrical characterization of MOS capacitor;

Raman scattering spectroscopy.

 

Projects. Local PI in the framework of the the FP7 FET-Open project "2D-Nanolattices" (201-14); PI of the CNR grant "Joint Lab" in collaboration with the group of Prof. Akinwande, Univ. of Texas at Austin (2014-17);  PI of the "CrystEL" project founded by the Fondazione CARIPLO and Regione Lombardia aiming at the enhanced competitiveness within the ERC calls (18 month since Oct. 2016), and local PI of the regional project "I-ZEB" founded by Regione Lombardia and CNR; Local PI of the I-ZEB project funded by Regione Lombardia; PI of the ERC-COG 2017 grant "XFab" and ERC-PoC 2022 grant "XMem".

 

Dissemination. In 2010, he co-chaired Symposium H "Post-Si CMOS electronic devices: the role of Ge and III-V materials" at the E-MRS 2010 Spring Meeting; Symposium I "The route to Post-Si CMOS devices: from high-mobility channels to graphene-like nanosheets" at the E-MRS 2013 Spring Meeting, Strasbourg, the Symposium Z "Two-dimensional crystals and their van der Waals heterostructures for nanoelectronics", E-MRS 2016 Spring Meeting, Lille; Symposium NM06 "Theory and Characterization of 2D Materials - Bridging Atomic Structutre and Device Performance", MRS 2020 Spring Meeting, Phoenix (AZ).

He is co-editor of the book "2D materials for nanoelectronics"  published CRC Press (Taylor & Francis group), April 2026, and co-editor of the book "Xenes", published by Elsevier, Woodhead Publishing, July 2022. He is co-authors of two topical reviews ("Silicene:A review of recent experimental and theoretical investigations" published by J. Phys: Cond. Matter and "Two-dimensional silicon: the advent of silicene" published on 2D Materials) and a monographic chapter on the topic of silicene and Xenes. He is author and co-athor of more than 75 peer-reviewed articles in international scientific journals, he received more than 20 invitations to international conferences (including APS, ECS , and AVS meeting) for his contributions to the Ge/III-V issues and 2D materials issues, and he served as reviewer for European universities and institutions, and for several scientific journals (including Advanced Materials, Nano Letters, Physical Review Letters,).

Find me on:

                                                                    

 

10 consigli per un profilo LinkedIn che attrae lavoro

Academia.edu

 

ResearchGate

Loop

 

 

Editorials

Highlights

2022

Optothermal silicene

Eleonora Bonaventura*, Daya Sagar Dhungana, Christian Martella*, Carlo Grazianetti*, Salavtore Macis, Stefano Lupi, Emiliano Bonera, Alessandro Molle,* "Optical and thermal responses of silicene in Xene heterostructures" Nanoscale Horiz. 2022 (open access) https://doi.org/10.1039/D2NH00219A 

 

2021

Two-dimensional Xene heterostructures

Daya Sagar Dhungana, Carlo Grazianetti*, Christian Martella, Simona Achilli, Guido Fratesi*, Alessandro Molle,* "Two-dimensional silicene-stanene heterostructures by epitaxy" Adv. Funct. Mater. 2021 https://doi.org/10.1002/adfm.202102797 (Open Access) 

 

Can stanene grow on sapphire?

Carlo Grazianetti, Eleonora Bonaventura, Christian Martella, Alessandro Molle,* and Stefano Lupi*, "Optical Properties of Stanene-like Nanosheets on Al2O3(0001): Implications for Xene Photonics" ACS Appl. Nano Mater. 2021 https://dx.doi.org/10.1021/acsanm.0c03221 (Open Access)

 

 

 

The MoS2 plasmonics quartet

M. Bhatnagar et al., "Broadband and Tunable Light Harvesting in Nanorippled MoS2 Ultrathin Films" ACS Appl. Mater. Interf. 2021 (Open Access);

A. Camellini et al., "Evidence of Plasmon Enhanced Charge Transfer in Large-Area Hybrid Au–MoS2 Metasurface" Adv. Opt. Mater 2020

C. Mennucci et al, "Geometrical Engineering of Giant Optical Dichroism in Rippled MoS2 Nanosheets" Adv. Opt. Mater. 2020

M. Bhatnagar et al.,"Ultra-broadband photon harvesting in large-area few-layer MoS2 nanostripe gratings" Nanoscale 2020  (Open Access)

 

 

2020

Epitaxial Phosphorene at hand

C. Martella, G. Faraone, M. H. Alam, D. Tanneja, L. Tao. G. Scavia, E. Bonera, C. Grazianetti, D. Akinwande, and A. Molle, "Disassembling Silicene from Native Substrate and Transferring onto an Arbitrary Target Substrate" Adv. Funct. Mater. 2020 https://doi.org/10.1002/adfm.202004546 (Open Access)

 

 

 2019

    Epitaxial Phosphorene at hand

    C. Grazianetti, G. Faraone, C.Martella, E. Bonera, and A. Molle, "Embedding epitaxial   (blue) phosphorene in between device-compatible functional layers" Nanoscale (2019) DOI: 10.1039/C9NR06037E (Open Acces)

 

 

 

2018

Optical conductivity of 2D silicon

C. Grazianetti, S. La Rosa, C. Martella, P. Targa, D. Codegoni, P. gori, O. Pulci, A. Molle*, and S. Lupi*, "Optical Conductivity of Two-Dimensional Silicon: Evidence of Dirac Electrodynamics" Nano Letters 2018, DOI: 10.1021/acs.nanolett.8b03169

 

All about silicene

A. Molle, C. Grazianetti*, L. Tao*, D. Taneja, Md. Hasibul Halam, and D. Akiwande*, "Silicene, silicene derivatives, and theri device applications" Chem. Soc. Rev. 2018, 47, 6370-6387   DOI:10.1039/C8CS00338F (2018)

 

 

 

Anisotropy at the 2D level by design

C. Martella, C. Mennucci, A. Lamperti, E. Cappelluti,
F. Buatier de Mongeot, and A. Molle*, "Designer Shape Anisotropy on Transition-Metal-Dichalcogenide Nanosheets", Advanced Materials (2018), DOI: 10.1002/adma.201705615

 

 

 

 

2017

Silicene goes Multilayer!

C. Grazianetti, E. Cinquanta, L. Tao, P. De Padova, C. Quaresima, C. Ottaviani, D. Akinwande, and A. Molle, "Silicon Nanosheets: Crossover between Multilayer Silicene and Diamond-like Growth Regime" ACS Nano (2017), DOI: 10.1021/acsnano.7b00762

 

 

A perspective on two-dimensional Xenes

A. Molle, J. Goldberger, M. Houssa, Y. Xu, S.-C. Zhang, and D. Akinwande,

"Buckled two-dimensional Xene sheets",

Nature Materials, 16, 163 (2017)    DOI: 10.1038/NMAT4802 (2017)

 

 

 

 

 

 

 

 

 

2015

The silicene transistor

L. Tao, E. Cinquanta, D. Chiappe, C. Grazianetti, M. Fanciulli, M. Dubey, A. Molle, and D. Akinwande, "Silicene field-effect-transistors operating at room temperature" Nature Nanotechnology 10, 227 (2015), doi:10.1038/nnano.2014.325 

See also: "2D Materials: Silicene Transistors", G. Le Lay, Nature Nnotechnology | News & Views,  doi:10.1038/nnano.2015.10

 

 

Research

  • 2D buckled Xene sheets. Growing new 2D materials of single element X ranging from silicene to germanene to stanene and phosphorene, generally termed Xenes, is a new research frontier aiming to expand the common knowledge in materials science, nanotechnology, and physics. The activity basically relies on the epitaxy on substrates and subsequent processing towards device integration. One approach is the encapsulation + delamination from cleavable substrates, see the realization of the silicene transistor here. An alternative aproach is Xene template engineering, namely the quest for substrate suitable for the commensurate growth or the van der Waals epitaxy of a Xene single layer. See the case of silicene on MoS2  here and the related heterosheet transistor here. MSc/PhD thesis openings available for this activity.

 

  • Chemical vapor deposition of transistion metal dichalcogenides (TMDs) and their van der Waals heterostructures. TMDs like MoS2 are one of the more feasible 2D platform for nanotechnology. They can be utilized in nanoelectronics (eithr for logic and memory devices as well as for flexible electronics), optolectronics, photonics, chemical and bio- sensing, energy and hydrogen evolution reaction, etc. The big challenge for the TMD production is the large-scale synthesis. We address this issue by a cost-effective furnace-based chemical vapor deposition approach starting from a solid film precursor of the transition metal on a substrate (for more details see here). This approach enables us to have large area, conformal and thickness controlled TMD nanosheets that can be used as building blocks for van der Waal heterostructures. Target applications are: ultra-scaled field effect transistors, hybrid heterostructures for light emitting diodes and photovoltaic cells. MSc/PhD thesis openings available for this activity.
  • Anisotropy at the 2D level. TMD as well graphene are isotropic in nature. Making them anisotropic may open a wealth of unexplored properties descending from the local manipulation of the 2D lattice. We induce a one-directional anisotropy in MoS2 nanosheet as a consequence of a conformal growth on a pre-patterned substrate. Target applications are: exciton engineering and strain tuning towards single photon emitter production, platforms for hydrogen evolution reaction. MSc thesis openings available for this activity.
  • Transition metal ditellurides as Weyl semimetal ultrathin films. MoTe2 and WTe2 can be synthesized as ultrathin films and reduced to a octahedral phase hosting so-called Weyl fermions in their electronic structure. This may lead to to the emergence of topological Weyl semimetallic state in an ultrathin film configuration with high potential for technology applications. One example in this respect is the coupling with a ferromagnetic counterpart so as to follow new paths for spin manipulation towards spintronics forefronts. This route will be followed within the framework of a H2020 FET-Proactive project "Skytop" at the CNR-IMM.

 

 

 

 

 

 

 

 

 

Scientific Production

Alessandro Cataldo, Pinaka Pani Tummala, Christian Martella, Carlo Spartaco Casari, Alessandro Molle, Alessio Lamperti

Effects of inorganic seed promoters on MoS2 few-layers grown via chemical vapor deposition

Journal of Crystal Growth [North-Holland], Volume: 627 Pages: 127530

Sara Ghomi, Alessio Lamperti, Mario Alia, Carlo Spartaco Casari, Carlo Grazianetti, Alessandro Molle, Christian Martella

Large Area Growth of Silver and Gold Telluride Ultrathin Films via Chemical Vapor Tellurization

Inorganics [MDPI], Volume: 12 Issue: 1 Pages: 33

Carlo Grazianetti, Alessandro Molle, Christian Martella

Silicene Applications in Nanotechnology: From Transistors to Bendable Membranes

Authorea Preprints [Authorea],

Sara Ghomi, Pinaka Pani Tummala, Raimondo Cecchini, Carlo S Casari, Alessio Lamperti, Carlo Grazianetti, Christian Martella, Alessandro Molle

Tailoring the dimensionality of tellurium nanostructures via vapor transport growth

Materials Science in Semiconductor Processing [Pergamon], Volume: 168 Pages: 107838

Christian Martella, Chiara Massetti, Daya Sagar Dhungana, Emiliano Bonera, Carlo Grazianetti, Alessandro Molle

Bendable Silicene Membranes (Adv. Mater. 49/2023)

Advanced Materials [], Volume: 35 Issue: 49 Pages: 2370353

V.V. Afanas'ev P.P. Tummala, G. Delie, A. Cataldo, S. Ghomi, C. Martella, G. Ferrini, A. Molle, A. Lamperti

Impact of CVD chemistry on band alignment at the MoS2/SiO2 interface

Solid-State Electronics [Elsevier], Volume: 209 Pages: 108782

Giacomo Inzani, Lyudmyla Adamska, Amir Eskandari-asl, Nicola Di Palo, Gian Luca Dolso, Bruno Moio, Luciano Jacopo D’Onofrio, Alessio Lamperti, Alessandro Molle, Rocío Borrego-Varillas, Mauro Nisoli, Stefano Pittalis, Carlo Andrea Rozzi, Adolfo Avella, Matteo Lucchini

Field-driven attosecond charge dynamics in germanium

Nature Photonics [Nature Publishing Group UK], Pages: 1-7

Eleonora Bonaventura, Christian Martella, Salvatore Macis, Daya S Dhungana, Simonas Krotkus, Michael Heuken, Stefano Lupi, Alessandro Molle, Carlo Grazianetti

Optical properties of two-dimensional tin nanosheets epitaxially grown on graphene

arXiv preprint arXiv:2306.07773 [],

Christian Martella, Chiara Massetti, Daya Sagar Dhungana, Emiliano Bonera, Carlo Grazianetti, Alessandro Molle

Bendable silicene membranes

Advanced Materials [], Pages: 2211419

Daya Sagar Dhungana, Eleonora Bonaventura, Christian Martella, Carlo Grazianetti, Alessandro Molle

Solid Phase Crystallization of Amorphous Silicon at the Two-Dimensional Limit

Nanoscale Advances [Royal Society of Chemistry],

Simona Achilli, Daya Sagar Dhungana, Federico Orlando, Carlo Grazianetti, Christian Martella, Alessandro Molle, Guido Fratesi

Crystal phase engineering of silicene by Sn-modified Ag (111)

Nanoscale [Royal Society of Chemistry],

Daya S Dhungana, Chiara Massetti, Christian Martella, Carlo Grazianetti, Alessandro Molle

All-around encapsulation of silicene

Nanoscale Horizons [Royal Society of Chemistry],

Giacomo Inzani, Amir Eskandari-asl, Lyudmila Adamska, Bruno Moio, GIAN Dolso, Nicola DI PALO, Luciano J D'Onofrio, Alessio Lamperti, Alessandro Molle, Carlo Andrea Rozzi, Rocio Borrego-Varillas, Mauro Nisoli, Stefano Pittalis, Adolfo Avella, Matteo Lucchini

Photoinduced charge carrier dynamics in germanium

IL NUOVO CIMENTO C [], Volume: 46 Pages: 1-4

Alessio Lamperti, Pinaka Pani Tummala, Alessandro Molle, Christian Martella

Large area growth of single phase TMT nanosheets through simulation guided AP-CVD tellurization

MRS [], Volume: 9

Giacomo Inzani, Lyudmyla Adamska, Amir Eskandari-asl, Nicola Di Palo, Gian Luca Dolso, Bruno Moio, Luciano Jacopo D'Onofrio, Alessio Lamperti, Alessandro Molle, Rocío Borrego-Varillas, Mauro Nisoli, Stefano Pittalis, Carlo Andrea Rozzi, Adolfo Avella, Matteo Lucchini

Field-driven attosecond photoinjection dynamics in semiconductors

arXiv preprint arXiv:2212.02157 [],

Christian Martella, Davide Campi, Pinaka Pani Tummala, Erika Kozma, Paolo Targa, Davide Codegoni, Marco Bernasconi, Alessio Lamperti, Alessandro Molle

Extreme Bendability of Atomically Thin MoS2 Grown by Chemical Vapor Deposition Assisted by Perylene-Based Promoter

Nanomaterials [MDPI], Volume: 12 Issue: 22 Pages: 4050

Pinaka Pani Tummala, Sara Ghomi, Carlo Spartaco Casari, Christian Martella, Alessio Lamperti, Alessandro Molle

Large Area Growth and Phase Selectivity of MoTe2 Nanosheets through Simulation‐Guided CVD Tellurization

Advanced Materials Interfaces [], Pages: 2200971

Carlo Rizza, Alessandro Molle

Closing the THz gap with Dirac semimetals

Light: Science & Applications [Nature Publishing Group], Volume: 11 Issue: 1 Pages: 1-2

Emiliano Bonera, Alessandro Molle

Optothermal Raman Spectroscopy of Black Phosphorus on a Gold Substrate

Nanomaterials [MDPI], Volume: 12 Issue: 9 Pages: 1410

Pinaka Pani Tummala, Christian Martella, Alessandro Molle, Alessio Lamperti

Ambient Pressure Chemical Vapor Deposition of Flat and Vertically Aligned MoS2 Nanosheets

Nanomaterials [MDPI], Volume: 12 Issue: 6 Pages: 973

Eleonora Bonaventura, Daya S Dhungana, Christian Martella, Carlo Grazianetti, Salvatore Macis, Stefano Lupi, Emiliano Bonera, Alessandro Molle

Optical and thermal responses of silicene in Xene heterostructures

Nanoscale Horizons [Royal Society of Chemistry], Volume: 7 Issue: 8 Pages: 924-930

Pinaka Pani Tummala, Christian Martella, Alessio Lamperti, Alessandro Molle

Synthesis and phase tuning of MoTe2 nanosheets by chemical vapor deposition

MRS [],

Gabriele Faraone, Christian Martella, Emiliano Bonera, Alessandro Molle, Carlo Grazianetti

How the Oxygen Absorption Affects the Al2O3 Encapsulated Blue Phosphorene‐Au Alloy

physica status solidi (RRL)–Rapid Research Letters [],

Daya Sagar Dhungana, Carlo Grazianetti, Christian Martella, Simona Achilli, Guido Fratesi, Alessandro Molle

Two‐Dimensional Silicene–Stanene Heterostructures by Epitaxy

Advanced Functional Materials [], Pages: 2102797

Francesco Tumino, Carlo Grazianetti, Christian Martella, Marina Ruggeri, Valeria Russo, Andrea Li Bassi, Alessandro Molle, Carlo S Casari

Hydrophilic Character of Single-Layer MoS2 Grown on Ag(111)

The Journal of Physical Chemistry C [American Chemical Society], Volume: 125 Issue: 17 Pages: 9479-9485

Gabriele Faraone, Roberta Sipala, Massimiliano Mariani, Christian Martella, Carlo Grazianetti, Alessandro Molle, Emiliano Bonera

Probing the Laser Ablation of Black Phosphorus by Raman Spectroscopy

The Journal of Physical Chemistry C [American Chemical Society], Volume: 125 Issue: 16 Pages: 8704-8711

Christian Martella, Alessio Quadrelli, Pinaka Pani Tummala, Cristina Lenardi, Roberto Mantovan, Alessio Lamperti, Alessandro Molle

Tailoring the Phase in Nanoscale MoTe2 Grown by Barrier-Assisted Chemical Vapor Deposition

Crystal Growth & Design [American Chemical Society], Volume: 21 Issue: 5 Pages: 2970-2976

Claudia Backes, Ranjan Kumar Behera, Abigail Bellamy-Carter, Alberto Bianco, Valérie Caps, Cinzia Casiraghi, Manish Chhowalla, Alejandro Criado, Trevor Davies, Andrea C Ferrari, Stefano Fornasaro, Fernando Galembeck, Stuart Goldie, Mark C Hersam, Ali Reza Kamali, Vladimir Kolosov, Vimal Kumar, Wai Hin Lee, Natalia Martsinovich, Michele Melchionna, Manuela Melucci, Alessandro Molle, Harry Morgan, Christof Neumann, Tim Nowack, Andrea Oyarzun, Vincenzo Palermo, Girija Shankar Papanai, Maurizio Prato, Yuyoung Shin, Ruohong Sui, Ivo F Teixeira, Gang Wang, Zhenyuan Xia

3-Dimensional graphene-like structures and applications: general discussion

Faraday Discussions [The Royal Society of Chemistry],

Claudia Backes, Szymon Bartus, Cinzia Casiraghi, Andrea Ferrari, Ali Reza Kamali, Miroslav Kolíbal, Vimal Kumar, Alessandro Molle, Andrea Oyarzun, Vincenzo Palermo, Amretashis Sengupta, Alessandro Silvestri, Hua Zhang

Applications in opto-electronics: general discussion

Faraday Discussions [Royal Society of Chemistry], Volume: 227 Pages: 184-188

Carlo Grazianetti, Eleonora Bonaventura, Christian Martella, Alessandro Molle, Stefano Lupi

Optical Properties of Stanene-like Nanosheets on Al2O3(0001): Implications for Xene Photonics

ACS applied nano materials [American Chemical Society], Volume: 4 Issue: 3 Pages: 2351-2356

Mukul Bhatnagar, Matteo Gardella, Maria Caterina Giordano, Debasree Chowdhury, Carlo Mennucci, Andrea Mazzanti, Giuseppe Della Valle, Christian Martella, Pinakapani Tummala, Alessio Lamperti, Alessandro Molle, Francesco Buatier de Mongeot

Broadband and Tunable Light Harvesting in Nanorippled MoS2 Ultrathin Films

ACS applied materials & interfaces [American Chemical Society], Volume: 13 Issue: 11 Pages: 13508-13516

Alessandro Molle, Gabriele Faraone, Alessio Lamperti, Daniele Chiappe, Eugenio Cinquanta, Christian Martella, Emiliano Bonera, Emilio Scalise, Carlo Grazianetti

Stability and universal encapsulation of epitaxial Xenes

Faraday Discussions [The Royal Society of Chemistry], Volume: 227 Pages: 171-183

Raimondo Cecchini, Christian Martella, Claudia Wiemer, Alessio Lamperti, Alberto Debernardi, Lucia Nasi, Laura Lazzarini, Alessandro Molle, Massimo Longo

Vapor phase epitaxy of antimonene-like nanocrystals on germanium by an MOCVD process

Applied Surface Science [North-Holland], Volume: 535 Pages: 147729

Roberto Sorrentino, Robyn Worsely, Paola Lagonegro, Christian Martella, Adriana Alieva, Guido Scavia, Francesco Galeotti, Mariacecilia Pasini, Benoit Dubertret, Sergio Brovelli, Alessandro Molle, Cinzia Casiraghi, Umberto Giovanella

Hybrid MoS2/PEDOT: PSS transporting layer for Interface Engineering of Nanoplatelets based Light-Emitting Diodes

Dalton Transactions [Royal Society of Chemistry], Volume: 50 Issue: 26 Pages: 9208-9214

Katsuhiko Ariga, Busshitsu Zairyo Kenkyu Kiko, Hongkin Fan, Ligang Feng, Zhanhu Guo, Yanglong Hou, Sang-Jae Kim, Liangzhi Kou, Feng Liu, Juewen Liu, Xiong Wen David Lou, Alessandro Molle, Microsistemi Consiglio Nazionale, Shizhang Qiao, Timon Rabczuk, Haibo Shu, Anjali Singh, Yexiang Tong, Jianfang Wang, Liming Wang, Aiguo Wu, Feng Xu, Jiaguo Yu, Han Zhang, Qiang Zhang, Tierui Zhang, Zhen Zhou

Outstanding Reviewers for Nanoscale in 2020

Nanoscale [], Volume: 13 Pages: 10196

Carlo Mennucci, Andrea Mazzanti, Christian Martella, Alessio Lamperti, Mukul Bhatnagar, Roberto Lo Savio, Luca Repetto, Andrea Camellini, Margherita Zavelani‐Rossi, Alessandro Molle, Francesco Buatier de Mongeot, Giuseppe Della Valle

Geometrical Engineering of Giant Optical Dichroism in Rippled MoS2 Nanosheets

Advanced Optical Materials [], Pages: 2001408

Andrea Camellini, Andrea Mazzanti, Carlo Mennucci, Christian Martella, Alessio Lamperti, Alessandro Molle, Francesco Buatier de Mongeot, Giuseppe Della Valle, Margherita Zavelani‐Rossi

Evidence of Plasmon Enhanced Charge Transfer in Large‐Area Hybrid Au–MoS2 Metasurface

Advanced Optical Materials [], Pages: 2000653

Christian Martella, Gabriele Faraone, Muhammad Hasibul Alam, Deepyanti Taneja, Li Tao, Guido Scavia, Emiliano Bonera, Carlo Grazianetti, Deji Akinwande, Alessandro Molle

Disassembling Silicene from Native Substrate and Transferring onto an Arbitrary Target Substrate

Advanced Functional Materials [], Volume: 30 Issue: 42 Pages: 2004546

Christian Martella, Erika Kozma, Pinaka Pani Tummala, Saverio Ricci, Kishan Ashokbhai Patel, Anita Andicsovà‐Eckstein, Fabio Bertini, Guido Scavia, Roman Sordan, Luca G Nobili, Monica Bollani, Umberto Giovanella, Alessio Lamperti, Alessandro Molle

Changing the Electronic Polarizability of Monolayer MoS2 by Perylene‐Based Seeding Promoters

Advanced Materials Interfaces [], Volume: 7 Issue: 20 Pages: 2000791

Raimondo Cecchini, Christian Martella, Claudia Wiemer, Alessio Lamperti, Alberto Debernardi, Lucia Nasi, Laura Lazzarini, Alessandro Molle, Massimo Longo

Vapor phase epitaxy of antimonene-like nanocrystals on germanium by an MOCVD process

Applied Surface Science [North-Holland], Volume: 535 Pages: 147729

Stefano Lupi, Alessandro Molle

Emerging Dirac materials for THz plasmonics

Applied Materials Today [Elsevier], Volume: 20 Pages: 100732

Gabriele Faraone, Emanuele Balduzzi, Christian Martella, Carlo Grazianetti, Alessandro Molle, Emiliano Bonera

Thickness determination of anisotropic van der Waals crystals by Raman spectroscopy: the case of black phosphorus.

Nanotechnology [IOP Publishing], Volume: 31 Issue: 41 Pages: 415703

Federico Motti, Christian Martella, Silvia Vangelista, Alessio Lamperti, Matteo Cantoni, Alessandro Molle, Roberto Mantovan

Growth of 2D-molybdenum disulfide on top of magnetite and iron by chemical methods

Thin Solid Films [Elsevier], Volume: 701 Pages: 137943

Paola Lagonegro, Christian Martella, Benedetta M Squeo, Francesco Carulli, Guido Scavia, Alessio Lamperti, Francesco Galeotti, Benoit Dubertret, Mariacecilia Pasini, Sergio Brovelli, Alessandro Molle, Umberto Giovanella

Prolonged lifetime in nanocrystal light-emitting diodes incorporating MoS2-based conjugated polyelectrolyte interfacial layer as alternative to PEDOT: PSS

ACS Applied Electronic Materials [American Chemical Society], Volume: 2 Issue: 5 Pages: 1186-1192

Pinakapani Tummala, Alessio Lamperti, Mario Alia, Erika Kozma, Luca Giampaolo Nobili, Alessandro Molle

Application-Oriented Growth of a Molybdenum Disulfide (MoS2) Single Layer by Means of Parametrically Optimized Chemical Vapor Deposition

Materials [Multidisciplinary Digital Publishing Institute], Volume: 13 Issue: 12 Pages: 2786

Andrea Camellini, Carlo Mennucci, Andrea Mazzanti, Christian Martella, Alessio Lamperti, Alessandro Molle, Francesco Buatier de Mongeot, Giuseppe Della Valle, Margherita Zavelani-Rossi

Tuning the transient opto-electronic properties of few-layer MoS2 nanosheets via substrate nano-patterning

EPJ Web of Conferences [EDP Sciences], Volume: 238 Pages: 07006

Mukul Bhatnagar, Maria Caterina Giordano, Carlo Mennucci, Debasree Chowdhury, Andrea Mazzanti, Giuseppe Della Valle, Christian Martella, Pinakapani Tummala, Alessio Lamperti, Alessandro Molle, Francesco Buatier de Mongeot

Ultra-broadband photon harvesting in large-area few-layer MoS 2 nanostripe gratings

Nanoscale [Royal Society of Chemistry], Volume: 12 Issue: 48 Pages: 24385-24393

Carlo Grazianetti, Christian Martella, Alessandro Molle

The Xenes Generations: A Taxonomy of Epitaxial Single‐Element 2D Materials

Physica Status Solidi (RRL) [Wiley],

Carlo Grazianetti, Christian Martella, Alessandro Molle

The Xenes Generations: A Taxonomy of Epitaxial Single‐Element 2D Materials

Physica Status Solidi (RRL) [Wiley],

Carlo Grazianetti, Christian Martella, Alessandro Molle

The Xenes Generations: A Taxonomy of Epitaxial Single‐Element 2D Materials

Physica Status Solidi (RRL) [Wiley],

Carlo Grazianetti, Christian Martella, Alessandro Molle

The Xenes Generations: A Taxonomy of Epitaxial Single‐Element 2D Materials

Physica Status Solidi (RRL) [Wiley],

Carlo Grazianetti, Christian Martella, Alessandro Molle

The Xenes Generations: A Taxonomy of Epitaxial Single‐Element 2D Materials

Physica Status Solidi RRL [Wiley],

Christian Martella, Luca Ortolani, Elena Cianci, Alessio Lamperti, Vittorio Morandi, Alessandro Molle

Large-area patterning of substrate-conformal MoS2 nano-trenches

Nano Research [Springer-Nature],

Carlo Grazianetti, Gabriele Faraone, Christian Martella, Emiliano Bonera, Alessandro Molle

Embedding epitaxial (blue) phosphorene in between device-compatible functional layers

Nanoscale [Royal Society of Chemistry], Volume: 11 Issue: 39 Pages: 18232-18237

Carlo Grazianetti, Stefania De Rosa, Christian Martella, Paolo Targa, Davide Codegoni, Paola Gori, Olivia Pulci, Alessandro Molle, Stefano Lupi

Optical Conductivity of Two-Dimensional Silicon: Evidence of Dirac Electrodynamics

Nano letters [American Chemical Society], Volume: 18 Issue: 11 Pages: 7124-7132

Roberto Mantovan, Yuri Matveyev, Giovanni Vinai, Christian Martella, Piero Torelli, Alessandro Molle, Sergei Zarubin, Yuri Lebedinskii, Andrei Zenkevich

Bonding Character and Magnetism at the Interface Between Fe and MoS2 Nanosheets

physica status solidi (a) [], Volume: 215 Issue: 13 Pages: 1800015

Andrea Camellini, Carlo Mennucci, Eugenio Cinquanta, Christian Martella, Andrea Mazzanti, Alessio Lamperti, Alessandro Molle, Francesco Buatier De Mongeot, Giuseppe Della Valle, Margherita Zavelani-Rossi

Ultrafast Anisotropic Exciton Dynamics In Nanopatterned MoS2 Sheets

ACS Photonics [American Chemical Society], Volume: 5 Issue: 8 Pages: 3363-3371

M. Ezawa, E. Salomon, P. De Padova, D. Solonenko, P. Vogt, M. E. Dávila, A. Molle, T. Angot, G. Le Lay

Fundamentals and functionalities of silicene, germanene, and stanene

La Rivista del Nuovo Cimento [Società Italiana di Fisica], Volume: 41 Issue: 3 Pages: 175-224

M. Ezawa, E. Salomon, P. De Padova, D. Solonenko, P. Vogt, M. E. Dávila, A. Molle, T. Angot, G. Le Lay

Fundamentals and functionalities of silicene, germanene, and stanene

La Rivista del Nuovo Cimento [Società Italiana di Fisica], Volume: 41 Issue: 3 Pages: 175-224

Christian Martella, Carlo Mennucci, Alessio Lamperti, Emmanuele Cappelluti, Francesco Buatier de Mongeot, Alessandro Molle

Designer Shape Anisotropy on Transition‐Metal‐Dichalcogenide Nanosheets

Advanced Materials [],

Alessandro Molle, Carlo Grazianetti, Li Tao, Deepyanti Taneja, Md Hasibul Alam, Deji Akinwande

Silicene, silicene derivatives, and their device applications

Chemical Society Reviews [Royal Society of Chemistry], Volume: 47 Issue: 16 Pages: 6370-6387

Christian Martella, Carlo Mennucci, Eugenio Cinquanta, Alessio Lamperti, Emmanuele Cappelluti, Francesco Buatier de Mongeot, Alessandro Molle

Anisotropic MoS2 Nanosheets Grown on Self‐Organized Nanopatterned Substrates

Advanced Materials [], Volume: 29 Issue: 19 Pages: 1605785

Eugenio Cinquanta, Andrea Camellini, Christian Martella, Carlo Mennucci, Alessio Lamperti, Giuseppe Della Valle, Margherita Zavelani Rossi, Francesco Buatier de Mongeot, Alessandro Molle, Salvatore Stagira

Anisotropic ultrafast response of MoS $ _ {\mathrm {2}} $ on rippled substrates

Bulletin of the American Physical Society [American Physical Society], Volume: 62

Carlo Grazianetti, Eugenio Cinquanta, Li Tao, Paola De Padova, Claudio Quaresima, Carlo Ottaviani, Deji Akinwande, Alessandro Molle

Silicon Nanosheets: Crossover between Multilayer Silicene and Diamond-like Growth Regime

ACS nano [American Chemical Society], Volume: 11 Issue: 3 Pages: 3376-3382

Eugenio Cinquanta, Andrea Camellini, Christian Martella, Carlo Mennucci, Alessio Lamperti, Giuseppe Della Valle, Margherita Zavelani Rossi, Francesco Buatier de Mongeot, Alessandro Molle, Salvatore Stagira

Anisotropic ultrafast response of MoS2 on rippled substrates

APS March Meeting Abstracts [], Volume: 2017 Pages: V30. 013

Alessandro Molle, Joshua Goldberger, Michel Houssa, Yong Xu, Shou-Cheng Zhang, Deji Akinwande

Buckled two-dimensional Xene sheets

Nature materials [Nature Publishing Group], Volume: 16 Issue: 2 Pages: 163-169

Christian Martella, Carlo Mennucci, Alessio Lamperti, Emmanuele Cappelluti, Francesco Buatier de Mongeot, Alessandro Molle

Designer Shape Anisotropy on Transition‐Metal‐Dichalcogenide Nanosheets

Advanced Materials [],

A Molle, J Goldberger, M Houssa, Y Xu, SC Zhang, D Akinwande

Nat. Mater.

Nat Mater [], Volume: 16 Pages: 163

F Fabbri, E Rotunno, E Cinquanta, D Campi, E Bonnini, D Kaplan, L Lazzarini, M Bernasconi, C Ferrari, M Longo, G Nicotra, A Molle, V Swaminathan, G Salviati

Novel near-infrared emission from crystal defects in MoS2 multilayer flakes

Nature communications [Nature Publishing Group], Volume: 7 Pages: 13044

F Fabbri, E Rotunno, E Cinquanta, D Campi, E Bonnini, D Kaplan, L Lazzarini, M Bernasconi, C Ferrari, M Longo, G Nicotra, A Molle, V Swaminathan, G Salviati

Novel near-infrared emission from crystal defects in MoS2 multilayer flakes

Nature communications [Nature Publishing Group], Volume: 7 Pages: 13044

Christian Martella, Pierpaolo Melloni, Eugenio Cinquanta, Elena Cianci, Mario Alia, Massimo Longo, Alessio Lamperti, Silvia Vangelista, Marco Fanciulli, Alessandro Molle

Engineering the Growth of MoS2 via Atomic Layer Deposition of Molybdenum Oxide Film Precursor

Advanced Electronic Materials [], Volume: 2 Issue: 10 Pages: 1600330

Alessandro Molle

(Invited) Xenes: A New Emerging Two-Dimensional Materials Platform for Nanoelectronics

ECS Transactions [The Electrochemical Society], Volume: 75 Issue: 5 Pages: 163-173

Alessandro Molle

Xenes: A new emerging two-dimensional materials platform for nanoelectronics

ECS Transactions [IOP Publishing], Volume: 75 Issue: 5 Pages: 163

Alessandro Molle, Carlo Grazianetti, Eugenio Cinquanta

(Invited) Silicene: Silicon at the Two Dimensional Limit and Its Applications to Nanoelectronics

ECS Transactions [The Electrochemical Society], Volume: 75 Issue: 8 Pages: 703-709

Alessandro Molle, Carlo Grazianetti, Eugenio Cinquanta

Silicene: Silicon at the Two Dimensional Limit and Its Applications to Nanoelectronics

ECS Transactions [IOP Publishing], Volume: 75 Issue: 8 Pages: 703

Alessandro Molle, Filippo Fabbri, Davide Campi, Alessio Lamperti, Enzo Rotunno, Eugenio Cinquanta, Laura Lazzarini, Daniel Kaplan, Venkataraman Swaminathan, Marco Bernasconi, Massimo Longo, Giancarlo Salviati

Evidence of Native Cs Impurities and Metal–Insulator Transition in MoS2 Natural Crystals

Advanced Electronic Materials [], Volume: 2 Issue: 6 Pages: 1600091

E Rotunno, F Fabbri, E Cinquanta, D Kaplan, M Longo, L Lazzarini, A Molle, V Swaminathan, G Salviati

Structural, optical and compositional stability of MoS2 multi-layer flakes under high dose electron beam irradiation

2D Materials [IOP Publishing], Volume: 3 Issue: 2 Pages: 025024

Max C Lemme, Frank Schwierz, M Houssa, A Dimoulas, A Molle

Graphene for RF analogue applications

2D Materials for Nanoelectronics [CRC Press], Volume: 17 Pages: 79

Silvia Vangelista, Eugenio Cinquanta, Christian Martella, Mario Alia, Massimo Longo, Alessio Lamperti, Roberto Mantovan, Francesco Basso Basset, Fabio Pezzoli, Alessandro Molle

Towards a uniform and large-scale deposition of MoS2 nanosheets via sulfurization of ultra-thin Mo-based solid films

Nanotechnology [IOP Publishing], Volume: 27 Issue: 17 Pages: 175703

Alessandro Molle, Alessio Lamperti, Davide Rotta, Marco Fanciulli, Eugenio Cinquanta, Carlo Grazianetti

Electron Confinement at the Si/MoS2 Heterosheet Interface

Advanced Materials Interfaces [Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim],

Carlo Grazianetti, Eugenio Cinquanta, Alessandro Molle

Two-dimensional silicon: the advent of silicene

2D Materials [IOP Publishing], Volume: 3 Issue: 1 Pages: 012001

Michel Houssa, Valery Afanas’ev, André Stesmans, Alessandro Molle, Athanasios Dimoulas

Structural, Electronic and Transport Properties of Silicene and Germanene

2D Materials for Nanoelectronics [CRC Press], Volume: 17 Pages: 331

Eugenio Cinquanta, Guido Fratesi, Stefano Dal Conte, Carlo Grazianetti, Francesco Scotognella, Salvatore Stagira, Caterina Vozzi, Giovanni Onida, Alessandro Molle

Optical response and ultrafast carrier dynamics of the silicene-silver interface

Physical Review B [American Physical Society], Volume: 92 Issue: 16 Pages: 165427

Marco Fanciulli, Matteo Belli, Stefano Paleari, Alessio Lamperti, Alessandro Molle, Mauro Sironi, Antonio Pizio

(Invited) Defects and Dopants in Silicon and Germanium Nanowires

ECS Transactions [The Electrochemical Society], Volume: 69 Issue: 5 Pages: 69-79

Marco Fanciulli, Matteo Belli, Stefano Paleari, Alessio Lamperti, Alessandro Molle, Mauro Sironi, Antonio Pizio

Defects and Dopants in Silicon and Germanium Nanowires

ECS Transactions [IOP Publishing], Volume: 69 Issue: 5 Pages: 69

C Grazianetti, D Chiappe, E Cinquanta, M Fanciulli, A Molle

Nucleation and temperature-driven phase transitions of silicene superstructures on Ag (1 1 1)

Journal of Physics: Condensed Matter [IOP Publishing], Volume: 27 Issue: 25 Pages: 255005

Li Tao, Eugenio Cinquanta, Carlo Grazianetti, Alessandro Molle, Deji Akinwande

(Invited) Nanoelectronics Based on Silicene

Meeting Abstracts [The Electrochemical Society], Issue: 9 Pages: 854-854

Li Tao, Eugenio Cinquanta, Carlo Grazianetti, Alessandro Molle, Deji Akinwande

Nanoelectronics Based on Silicene

ECS Meeting Abstracts [IOP Publishing], Issue: 9 Pages: 854

Adam Bross, Liang Zhao, David Elsaesser, Zhongda Li, Mark Durniak, Theeradetch Detchprohm, Tat-Sing Paul Chow, Christian Wetzel

Group-III Nitrides to the Extreme---from LEDs and Solar Cells to the Transistor

ECS Meeting Abstracts [IOP Publishing], Issue: 23 Pages: 1450

Eugenio Cinquanta, Li Tao, Guido Fratesi, Carlo Grazianetti, Marco Fanciulli, Giovanni Onida, Deji Akinwande, Alessandro Molle

Silicene on Silver: fundamental physical properties and integration in Field-Effect Transistors

Bulletin of the American Physical Society [American Physical Society], Volume: 60

Alessandro Molle, Daniele Chiappe, Davide Rotta, Alessio Lamperti, Carlo Grazianetti, Eugenio Cinquanta, Marco Fanciulli

Electron confinement at the Si-MoS2 heterosheet junction

Bulletin of the American Physical Society [American Physical Society], Volume: 60

Alessandro Molle, Davide Rotta, Stefano Paleari, Eugenio Cinquanta, Marco Fanciulli

Admittance spectroscopy of interface traps in MoS2 nanosheet capacitors

APS March Meeting Abstracts [], Volume: 2015 Pages: H1. 234

Li Tao, Eugenio Cinquanta, Carlo Grazianetti, Alessandro Molle, Deji Akinwande

Single/Bi-layer Silicene Field-Effect Transistors and their Air-Stability

APS March Meeting Abstracts [], Volume: 2015 Pages: L1. 005

Li Tao, Eugenio Cinquanta, Daniele Chiappe, Carlo Grazianetti, Marco Fanciulli, Madan Dubey, Alessandro Molle, Deji Akinwande

Silicene field-effect transistors operating at room temperature

Nature nanotechnology [Nature Publishing Group], Volume: 10 Issue: 3 Pages: 227-231

L Tao, P Sinsermsuksakul, P Yang

Nature Nanotechnol

Lett [], Volume: 10 Pages: 227-231

Alessio Lamperti, Alessandro Molle, Elena Cianci, Claudia Wiemer, S Spiga, M Fanciulli

Effect on Al: MO 2/In 0.53 Ga 0.47 As interface (M= Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition

Thin Solid Films [Elsevier], Volume: 563 Pages: 44-49

A Lamperti, A Molle, E Cianci, C Wiemer, S Spiga, M Fanciulli

Effect on Al: MO2/In0. 53Ga0. 47As interface (M= Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition

Thin solid films [Elsevier], Volume: 563 Pages: 44-49

A Lamperti, A Molle, E Cianci, C Wiemer, S Spiga, M Fanciulli

Effect on Al: MO {sub 2}/In {sub 0.53} Ga {sub 0.47} As interface (M= Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition

Thin Solid Films [], Volume: 563

Emilio Scalise, Michel Houssa, Emilio Cinquanta, Caludio Grazianetti, Bas van den Broek, Geoffrey Pourtois, Andre Stesmans, Marco Fanciulli, Allessandro Molle

Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X= S, Se, Te) chalchogenide templates

2D Materials [IOP Publishing], Volume: 1 Issue: 1 Pages: 011010

Daniele Chiappe, Emilio Scalise, Eugenio Cinquanta, Carlo Grazianetti, Bas van den Broek, Marco Fanciulli, Michel Houssa, Alessandro Molle

Two‐Dimensional Si Nanosheets with Local Hexagonal Structure on a MoS2 Surface

Advanced Materials [], Volume: 26 Issue: 13 Pages: 2096-2101

Elena Cianci, Alessandro Molle, Alessio Lamperti, Claudia Wiemer, Sabina Spiga, Marco Fanciulli

Phase Stabilization of Al: HfO2 Grown on In x Ga1–x As Substrates (x= 0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition

ACS applied materials & interfaces [American Chemical Society], Volume: 6 Issue: 5 Pages: 3455-3461

Eugenio Cinquanta, Francesco Scotognella, Daniele Chiappe, Carlo Grazianetti, Emilio Scalise, Michel Houssa, Marco Fanciulli, Caterina Vozzi, Alessandro Molle

Optical investigation of epitaxial silicene on Ag (111)

APS March Meeting Abstracts [], Volume: 2014 Pages: T51. 005

Alessandro Molle

Physical foundations and future perspectives of the epitaxial silicene

APS March Meeting Abstracts [], Volume: 2014 Pages: T51. 001

Michel Houssa, Bas van den Broek, Emilio Scalise, B Ealet, G Pourtois, D Chiappe, E Cinquanta, C Grazianetti, M Fanciulli, A Molle, VV Afanas’Ev, Andre Stesmans

Theoretical aspects of graphene-like group IV semiconductors

Applied surface science [North-Holland], Volume: 291 Pages: 98-103

Stefano Paleari, A Molle, F Accetta, A Lamperti, E Cianci, M Fanciulli

Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge (111)/GeO 2 interface after capping with Al 2 O 3 layer

Applied Surface Science [North-Holland], Volume: 291 Pages: 3-5

Carlo Grazianetti, Daniele Chiappe, Eugenio Cinquanta, Grazia Tallarida, Marco Fanciulli, Alessandro Molle

Exploring the morphological and electronic properties of silicene superstructures

Applied surface science [North-Holland], Volume: 291 Pages: 109-112

Emilio Scalise, E Cinquanta, Michel Houssa, Bas van den Broek, D Chiappe, C Grazianetti, G Pourtois, B Ealet, A Molle, M Fanciulli, VV Afanas’Ev, Andre Stesmans

Vibrational properties of epitaxial silicene layers on (111) Ag

Applied surface science [North-Holland], Volume: 291 Pages: 113-117

Stefano Paleari, A Molle, F Accetta, A Lamperti, E Cianci, M Fanciulli

Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge (1 1 1)/GeO2 interface after capping with Al2O3 layer

Applied surface science [North-Holland], Volume: 291 Pages: 3-5

Alessandro Molle, Athanasios Dimoulas, Guy Le Lay, Max Lemme

The route to post-Si CMOS devices: From high mobility channels to graphene-like 2D nanosheets

Applied Surface Science [], Volume: 291 Pages: 1-2

S Paleari, A Molle, F Accetta, A Lamperti, E Cianci, M Fanciulli, MDM Laboratorio, Via C Olivetti IMM-CNR

Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge (1 1 1)/GeO {sub 2} interface after capping with Al {sub 2} O {sub 3} layer

Applied Surface Science [], Volume: 291

Alessandro Molle, Athanasios Dimoulas, Guy Le Lay, Max Lemme

Special Issue: The route to post-Si CMOS devices: From high mobility channels to graphene-like 2D nanosheets

Applied Surface Science [], Issue: 291 Pages: 1-2

P Tsipas, S Kassavetis, D Tsoutsou, E Xenogiannopoulou, EGSA Golias, SA Giamini, C Grazianetti, D Chiappe, A Molle, M Fanciulli, A Dimoulas

Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag (111)

Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 25 Pages: 251605

Alessandro Molle, Carlo Grazianetti, Daniele Chiappe, Eugenio Cinquanta, Elena Cianci, Grazia Tallarida, Marco Fanciulli

Hindering the oxidation of silicene with non‐reactive encapsulation

Advanced Functional Materials [WILEY‐VCH Verlag], Volume: 23 Issue: 35 Pages: 4340-4344

Alessandro Molle, Carlo Grazianetti, Daniele Chiappe, Eugenio Cinquanta, Elena Cianci, Grazia Tallarida, Marco Fanciulli

Nanostructures: Hindering the Oxidation of Silicene with Non‐Reactive Encapsulation (Adv. Funct. Mater. 35/2013)

Advanced Functional Materials [WILEY‐VCH Verlag], Volume: 23 Issue: 35 Pages: 4339-4339

Alessandro Molle, Daniele Chiappe, Eugenio Cinquanta, Carlo Grazianetti, Marco Fanciulli, Emilio Scalise, Bas van den Broek, Michel Houssa

Structural and chemical stabilization of the epitaxial silicene

ECS Transactions [IOP Publishing], Volume: 58 Issue: 7 Pages: 217

Alessandro Molle, Daniele Chiappe, Eugenio Cinquanta, Carlo Grazianetti, Marco Fanciulli, Emilio Scalise, Bas van den Broek, Michel Houssa

(Invited) Structural and Chemical Stabilization of the Epitaxial Silicene

ECS Transactions [The Electrochemical Society], Volume: 58 Issue: 7 Pages: 217-227

Eugenio Cinquanta, Emilio Scalise, Daniele Chiappe, Carlo Grazianetti, Bas van den Broek, Michel Houssa, Marco Fanciulli, Alessandro Molle

Getting through the nature of silicene: An sp2–sp3 two-dimensional silicon nanosheet

The Journal of Physical Chemistry C [American Chemical Society], Volume: 117 Issue: 32 Pages: 16719-16724

A Molle, E Cianci, A Lamperti, C Wiemer, S Spiga, M Fanciulli

A Viable Route to Enhance Permittivity of Gate Dielectrics on In0. 53Ga0. 47As (001): Trimethylaluminum-Based Atomic Layer Deposition of MeO2 (Me= Zr, Hf)

ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 2 Issue: 9 Pages: P395

Stefano Paleari, Silvia Baldovino, Alessandro Molle, Marco Fanciulli

Evidence of trigonal dangling bonds at the Ge (111)/Oxide interface by electrically detected magnetic resonance

Physical review letters [American Physical Society], Volume: 110 Issue: 20 Pages: 206101

Gabriele Congedo, Claudia Wiemer, Alessio Lamperti, Elena Cianci, Alessandro Molle, Flavio G Volpe, Sabina Spiga

Atomic layer-deposited Al–HfO 2/SiO 2 bi-layers towards 3D charge trapping non-volatile memory

Thin Solid Films [Elsevier], Volume: 533 Pages: 9-14

Alessandro Molle, Elena Cianci, Alessio Lamperti, Claudia Wiemer, Silvia Baldovino, Luca Lamagna, Sabina Spiga, Marco Fanciulli, Guy Brammertz, Clement Merckling, Matty Caymax

Trimethylaluminum-based Atomic Layer Deposition of MO2 (M= Zr, Hf): Gate Dielectrics on In0. 53Ga0. 47As (001) Substrates

ECS Transactions [IOP Publishing], Volume: 50 Issue: 13 Pages: 11

E Scalise, E Cinquanta, M Houssa, B Van den Broek, D Chiappe, C Grazianetti, G Pourtois, B Ealet, A Molle, M Fanciulli

V. Afanas ev, A. Stesmans

Appl. Surf. Sci [], Volume: 291 Issue: 1 Pages: 113

C Corbet, M Ramon, H Movva, D Reddy, S Kang, Sk F Chowdhury, D Akinwande, E Tutuc, F Register, SK Banerjee, K Tomioka, T Fukui, SA Dayeh, Y Hwang, R Chen, W Tang, BM Nguyen, X Dai, Y Liu, XH Liu, A Molle, D Chiappe, E Cinquanta, C Grazianetti, M Fanciulli, E Scalise, B Van Den Broek, M Houssa, R Dargis, A Clark, FE Arkun, R Smith, VN Dos Santos, SAS Machado, W Liu, W Cao, J Kang, K Banerjee, HW Lu, JG Hwu, JH Shin, HW Jung, JH Park, YY Gomeniuk, YV Gomeniuk, AN Nazarov, S Monaghan, K Cherkaoui, É O'Connor, I Povey, V Djara, PK Hurley

ECS TRANSACTIONS

Nanoscale [], Volume: 99 Pages: 114

M Perego, A Molle, G Seguini

Electronic properties at the oxide interface with silicon and germanium through x-ray induced oxide charging

Applied Physics Letters [American Institute of Physics], Volume: 101 Issue: 21 Pages: 211606

Daniele Chiappe, Carlo Grazianetti, Grazia Tallarida, Marco Fanciulli, Alessandro Molle

Local electronic properties of corrugated silicene phases

Advanced Materials [WILEY‐VCH Verlag], Volume: 24 Issue: 37 Pages: 5088-5093

Carlo Grazianetti, Alessandro Molle, Grazia Tallarida, Sabina Spiga, Marco Fanciulli

Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0. 53Ga0. 47As (001) Surfaces

The Journal of Physical Chemistry C [American Chemical Society], Volume: 116 Issue: 35 Pages: 18746-18751

S Spiga, R Rao, L Lamagna, C Wiemer, G Congedo, A Lamperti, A Molle, M Fanciulli, F Palma, F Irrera

Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode

Journal of Applied Physics [American Institute of Physics], Volume: 112 Issue: 1 Pages: 014107

Alessandro Molle, Elena Cianci, Alessio Lamperti, Claudia Wiemer, Silvia Baldovino, Luca Lamagna, Sabina Spiga, Marco Fanciulli, Guy Brammertz, Clement Merckling, Matty Caymax

Trimethylaluminum-Based Atomic Layer Deposition of Al: MO2 (M= Zr, Hf): A Viable Route to Integrate High-Permittivity Oxides on In0. 53Ga0. 47As Substrates

ECS Meeting Abstracts [IOP Publishing], Issue: 28 Pages: 2457

Silvia Baldovino, Alessio Lamperti, Marco Fanciulli, Alessandro Molle

Role of the Oxygen Content in the GeO2 Passivation of Ge Substrates as a Function of the Oxidizer

Journal of The Electrochemical Society [IOP Publishing], Volume: 159 Issue: 6 Pages: H555

Marco Fanciulli, Silvia Baldovino, Alessandro Molle

Inspecting the microstructure of electrically active defects at the Ge/GeOx interface

APS March Meeting Abstracts [], Volume: 2012 Pages: S1. 096

L Lamagna, A Molle, C Wiemer, S Spiga, C Grazianetti, G Congedo, M Fanciulli

Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0. 53Ga0. 47As

Journal of The Electrochemical Society [The Electrochemical Society], Volume: 159 Issue: 3 Pages: H220-H224

L Lamagna, A Molle, C Wiemer, S Spiga, C Grazianetti, G Congedo, M Fanciulli

Atomic layer deposition of Al-doped ZrO2 thin films as gate dielectric for In0. 53Ga0. 47As

Journal of The Electrochemical Society [IOP Publishing], Volume: 159 Issue: 3 Pages: H220

J Barzola-Quiquia, N Klingner, J Krüger, A Molle, P Esquinazi, A Leonhardt, MT Martinez

Quantum oscillations and ferromagnetic hysteresis observed in iron filled multiwall carbon nanotubes

Nanotechnology [IOP Publishing], Volume: 23 Issue: 1 Pages: 015707

C Wiemer, A Debernardi, A Lamperti, A Molle, O Salicio, L Lamagna, M Fanciulli

Influence of lattice parameters on the dielectric constant of tetragonal ZrO2 and La-doped ZrO2 crystals in thin films deposited by atomic layer deposition on Ge (001)

Applied Physics Letters [American Institute of Physics], Volume: 99 Issue: 23 Pages: 232907

A Molle, L Lamagna, C Grazianetti, G Brammertz, C Merckling, M Caymax, S Spiga, M Fanciulli

Reconstruction dependent reactivity of As-decapped In0. 53Ga0. 47As (001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition

Applied Physics Letters [American Institute of Physics], Volume: 99 Issue: 19 Pages: 193505

VV Afanas’ ev, H-Y Chou, Michel Houssa, Andre Stesmans, L Lamagna, A Lamperti, A Molle, B Vincent, G Brammertz

Transitivity of band offsets between semiconductor heterojunctions and oxide insulators

Applied Physics Letters [American Institute of Physics], Volume: 99 Issue: 17 Pages: 172101

Alessandro Molle, Silvia Baldovino, Marco Fanciulli, Dimitra Tsoutsou, Evangelos Golias, Athanasios Dimoulas

Impact of post deposition annealing in the electrically active traps at the interface between Ge (001) substrates and LaGeOx films grown by molecular beam deposition

Journal of Applied Physics [American Institute of Physics], Volume: 110 Issue: 8 Pages: 084504

Alessandro Molle, Silvia Baldovino, Luca Lamagna, Sabina Spiga, Alessio Lamperti, Marco Fanciulli, Dimitra Tsoutsou, Evangelos Golias, Athanasios Dimoulas, Guy Brammertz, Clement Merckling, Matty Caymax

(Invited) Active Trap Determination at the Interface of Ge and In0. 53Ga0. 47 as Substrates with Dielectric Layers

ECS Transactions [The Electrochemical Society], Volume: 41 Issue: 3 Pages: 203-221

Alessandro Molle, Silvia Baldovino, Luca Lamagna, Sabina Spiga, Alessio Lamperti, Marco Fanciulli, Dimitra Tsoutsou, Evangelos Golias, Athanasios Dimoulas, Guy Brammertz, Clement Merckling, Matty Caymax

Active Trap Determination at the Interface of Ge and In0. 53Ga0. 47 as Substrates with Dielectric Layers

ECS Transactions [IOP Publishing], Volume: 41 Issue: 3 Pages: 203

Alessandro Molle, Luca Lamagna, Claudia Wiemer, Sabina Spiga, Marco Fanciulli, Clement Merckling, Guy Brammertz, Matty Caymax

Improved Performance of In0. 53Ga0. 47As-Based Metal–Oxide–Semiconductor Capacitors with Al: ZrO2 Gate Dielectric Grown by Atomic Layer Deposition

Applied physics express [IOP Publishing], Volume: 4 Issue: 9 Pages: 094103

Alessandro Molle, Silvia Baldovino, Luca Lamagna, Sabina Spiga, Marco Fanciulli, Dimitra Tsoutsou, Evangelos Golias, Athanasios Dimoulas, Guy Brammertz, Clement Merckling, Matty Caymax

Active Trap Determination at the Interface of Ge and InxGa1-xAs Substrates with Dielectric Layers

ECS Meeting Abstracts [IOP Publishing], Issue: 27 Pages: 1899

M Fanciulli, A Molle, S Baldovino, A Vellei

Magnetic resonance spectroscopy of defects at the dielectric-semiconductor interface: Ge substrates and Si nanowires

Microelectronic engineering [Elsevier], Volume: 88 Issue: 7 Pages: 1482-1487

C Wiemer, A Lamperti, L Lamagna, O Salicio, A Molle, M Fanciulli

Detection of the tetragonal phase in atomic layer deposited La-doped ZrO2 thin films on germanium

Journal of The Electrochemical Society [IOP Publishing], Volume: 158 Issue: 8 Pages: G194

L Lamagna, M Fusi, S Spiga, M Fanciulli, G Brammertz, C Merckling, M Meuris, A Molle

Effects of surface passivation during atomic layer deposition of Al 2 O 3 on In 0.53 Ga 0.47 As substrates

Microelectronic Engineering [Elsevier], Volume: 88 Issue: 4 Pages: 431-434

A Lamperti, S Baldovino, A Molle, M Fanciulli

Chemical nature of the passivation layer depending on the oxidizing agent in Gd 2 O 3/GeO 2/Ge stacks grown by molecular beam deposition

Microelectronic Engineering [Elsevier], Volume: 88 Issue: 4 Pages: 403-406

M Fusi, L Lamagna, S Spiga, M Fanciulli, G Brammertz, C Merckling, M Meuris, A Molle

Al 2 O 3 stacks on In 0.53 Ga 0.47 As substrates: In situ investigation of the interface

Microelectronic Engineering [Elsevier], Volume: 88 Issue: 4 Pages: 435-439

Claudia Wiemer, Alessio Lamperti, Luca Lamagna, Olivier Salicio, Alessandro Molle, Marco Fanciulli

Detection of the Tetragonal and Monoclinic Phases and their Role on the Dielectric Constant of Atomic Layer Deposited La-Doped ZrO2 Thin Films on Ge (001)

ECS Transactions [IOP Publishing], Volume: 35 Issue: 3 Pages: 481

Luca Lamagna, Alessandro Molle, Claudia Wiemer, Sabina Spiga, Carlo Grazianetti, Marco Fanciulli

Atomic Layer Deposition of Al-Doped ZrO2 Thin Films for Advanced Gate Stack on III-V Substrates

ECS Transactions [IOP Publishing], Volume: 35 Issue: 3 Pages: 431

S Baldovino, A Molle, M Fanciulli

Influence of the oxidation temperature on the non-trigonal Ge dangling bonds at the (100) Ge/GeO 2 interface

Microelectronic engineering [Elsevier], Volume: 88 Issue: 4 Pages: 388-390

M Fusi, L Lamagna, S Spiga, M Fanciulli, G Brammertz, C Merckling, M Meuris, A Molle

Al sub (2) O sub (3) stacks on In sub (0. 53) Ga sub (0. 47) As substrates: In situ investigation of the interface

Microelectronic Engineering [Elsevier BV], Volume: 88 Issue: 4 Pages: 435-439

A Lamperti, S Baldovino, A Molle, M Fanciulli

Chemical nature of the passivation layer depending on the oxidizing agent in Gd2O3/GeO2/Ge stacks grown by molecular beam deposition

Microelectronic engineering [Elsevier], Volume: 88 Issue: 4 Pages: 403-406

L Lamagna, M Fusi, S Spiga, M Fanciulli, G Brammertz, C Merckling, M Meuris, A Molle

Effects of surface passivation during atomic layer deposition of Al2O3 on In0. 53Ga0. 47As substrates

Microelectronic engineering [Elsevier], Volume: 88 Issue: 4 Pages: 431-434

M Fusi, L Lamagna, S Spiga, M Fanciulli, G Brammertz, C Merckling, M Meuris, A Molle

Al2O3 stacks on In0. 53Ga0. 47As substrates: In situ investigation of the interface

Microelectronic engineering [Elsevier], Volume: 88 Issue: 4 Pages: 435-439

Alessandro Molle, Guy Brammertz, Athanasios Dimoulas, Chiara Marchiori

Preface: Preface to Symposium H: Post-Si-CMOS electronic devices: The role of Ge and III-V materials

Microelectronic Engineering [Elsevier Science Ltd.], Volume: 88 Issue: 4 Pages: 323

Silvia Baldovino, Alessandro Molle, Marco Fanciulli

Influence of the oxidizing species on the Ge dangling bonds at the (100) Ge/GeO 2 interface

Applied physics letters [American Institute of Physics], Volume: 96 Issue: 22 Pages: 222110

Alessandro Molle, Luca Lamagna, Sabina Spiga, Marco Fanciulli, Guy Brammertz, Marc Meuris

Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks

Thin solid films [Elsevier], Volume: 518 Issue: 6 Pages: S123-S127

Alessandro Molle, Silvia Baldovino, Sabina Spiga, Marco Fanciulli

High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors

Thin solid films [Elsevier], Volume: 518 Issue: 6 Pages: S96-S103

Alessandro Molle, Guy Brammertz, Luca Lamagna, Sabina Spiga, Marc Meuris, Marco Fanciulli

Interface quality of atomic layer deposited La-doped ZrO2 films on Ge-passivated In 0.15 Ga 0.85 As substrates

MRS Online Proceedings Library [Springer International Publishing], Volume: 1194 Issue: 1 Pages: 80-88

L Lamagna, C Wiemer, S Baldovino, A Molle, M Perego, Sylvie Schamm-Chardon, Pierre-Eugène Coulon, M Fanciulli

Thermally induced permittivity enhancement in La-doped ZrO 2 grown by atomic layer deposition on Ge (100)

Applied Physics Letters [American Institute of Physics], Volume: 95 Issue: 12 Pages: 122902

Alessandro Molle, Guy Brammertz, Luca Lamagna, Marco Fanciulli, Marc Meuris, Sabina Spiga

Ge-based interface passivation for atomic layer deposited La-doped ZrO 2 on III-V compound (GaAs, In 0.15 Ga 0.85 As) substrates

Applied Physics Letters [American Institute of Physics], Volume: 95 Issue: 2 Pages: 023507

D Tsoutsou, L Lamagna, SN Volkos, A Molle, S Baldovino, S Schamm, Pierre-Eugène Coulon, M Fanciulli

Atomic layer deposition of La x Zr 1− x O 2− δ (x= 0.25) high-k dielectrics for advanced gate stacks

Applied Physics Letters [American Institute of Physics], Volume: 94 Issue: 5 Pages: 053504

Silvia Baldovino, Alessandro Molle, Marco Fanciulli

Evidence of dangling bond electrical activity at the Ge/oxide interface

Applied Physics Letters [American Institute of Physics], Volume: 93 Issue: 24 Pages: 242105

M Longo, O Salicio, C Wiemer, R Fallica, A Molle, M Fanciulli, C Giesen, B Seitzinger, PK Baumann, M Heuken, S Rushworth

Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications

Journal of Crystal Growth [North-Holland], Volume: 310 Issue: 23 Pages: 5053-5057

A Molle, S Spiga, Md NK Bhuiyan, G Tallarida, M Perego, C Wiemer, Marco Fanciulli

Atomic oxygen-assisted molecular beam deposition of Gd 2 O 3 films for ultra-scaled Ge-based electronic devices

Materials Science in Semiconductor Processing [Pergamon], Volume: 11 Issue: 5 Pages: 236-240

A Molle, S Spiga, Md NK Bhuiyan, G Tallarida, M Perego, C Wiemer, Marco Fanciulli

Atomic oxygen-assisted molecular beam deposition of Gd2O3 films for ultra-scaled Ge-based electronic devices

Materials science in semiconductor processing [Pergamon], Volume: 11 Issue: 5-6 Pages: 236-240

Alessandro Molle, Sabina Spiga, Andrea Andreozzi, Marco Fanciulli, Guy Brammertz, Marc Meuris

Structure and interface bonding of Ge O 2∕ Ge∕ In 0.15 Ga 0.85 As heterostructures

Applied Physics Letters [American Institute of Physics], Volume: 93 Issue: 13 Pages: 133504

Alessandro Molle, Claudia Wiemer, MDNK Bhuiyan, Grazia Tallarida, Marco Fanciulli

Epitaxial growth of cubic Gd2O3 thin films on Ge substrates

Journal of Physics: Conference Series [IOP Publishing], Volume: 100 Issue: 4 Pages: 042048

M Perego, A Molle, M Fanciulli

Effect of oxygen on the electronic configuration of Gd 2 O 3∕ Ge heterojunctions

Applied Physics Letters [American Institute of Physics], Volume: 92 Issue: 4 Pages: 042106

Alessandro Molle, Michele Perego, Md Nurul Kabir Bhuiyan, Claudia Wiemer, Grazia Tallarida, Marco Fanciulli

The interface between Gd 2 O 3 films and Ge (001): A comparative study between molecular and atomic oxygen mediated growths

Journal of Applied Physics [American Institute of Physics], Volume: 102 Issue: 3 Pages: 034513

F Buatier de Mongeot, A Toma, A Molle, S Lizzit, L Petaccia, Alessandro Baraldi

Self-organised synthesis of Rh nanostructures with tunable chemical reactivity

Nanoscale Research Letters [Springer New York], Volume: 2 Issue: 6 Pages: 251

Alessandro Molle, Claudia Wiemer, Md Nurul Kabir Bhuiyan, Grazia Tallarida, Marco Fanciulli, Giuseppe Pavia

Cubic-to-monoclinic phase transition during the epitaxial growth of crystalline Gd 2 O 3 films on Ge (001) substrates

Applied physics letters [American Institute of Physics], Volume: 90 Issue: 19 Pages: 193511

FB De Mongeot, A Molle, A Toma, C Boragno, U Valbusa

Nanostructuring Rh (110) Surfaces by Ion Etching

MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS [Warrendale, Pa.; Materials Research Society; 1999], Volume: 960 Pages: 48

Alessandro Molle, Md Nurul Kabir Bhuiyan, Grazia Tallarida, Marco Fanciulli

In situ chemical and structural investigations of the oxidation of Ge (001) substrates by atomic oxygen

Applied physics letters [American Institute of Physics], Volume: 89 Issue: 8 Pages: 083504

F Buatier de Mongeot, A Toma, A Molle, S Lizzit, L Petaccia, Alessandro Baraldi

Carbon monoxide dissociation on Rh nanopyramids

Physical review letters [American Physical Society], Volume: 97 Issue: 5 Pages: 056103

Alessandro Molle, Md Nurul Kabir Bhuiyan, Grazia Tallarida, Marco Fanciulli

Formation and stability of germanium oxide induced by atomic oxygen exposure

Materials science in semiconductor processing [Pergamon], Volume: 9 Issue: 4-5 Pages: 673-678

Alessandro Molle, Francesco Buatier de Mongeot, Anna Molinari, Corrado Boragno, Ugo Valbusa

Interfacial dynamics of the rhomboidal pyramid pattern on ion-eroded Cu (110)

Physical Review B [American Physical Society], Volume: 73 Issue: 15 Pages: 155418

Alessandro Molle, Andrea Toma, Corrado Boragno, Ugo Valbusa, Francesco Buatier de Mongeot

Nanostructuring Rh (110) Surfaces by Ion Etching

MRS Online Proceedings Library (OPL) [Cambridge University Press], Volume: 960

Alessandro Molle, Claudia Wiemer, Md Bhuiyan

Nurul Kabir, Tallarida, Grazia, and Fanciulli, Marco

Appl. Phys. Lett [], Volume: 89 Pages: 083504

Alessandro Molle, F Buatier de Mongeot, C Boragno, R Moroni, F Granone, D Sekiba, R Buzio, U Valbusa, R Felici, C Quirós

Dense arrays of Co nanocrystals epitaxially grown on ion-patterned Cu (110) substrates

Applied Physics Letters [American Institute of Physics], Volume: 86 Issue: 14 Pages: 141906

Alessandro Molle, F Buatier de Mongeot, F Granone, R Buzio, G Firpo, C Boragno, U Valbusa

Temperature dependence of rippled corrugations induced on the Rh (110) surface via ion sputtering

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 230 Issue: 1-4 Pages: 555-559

Alessandro Molle, Christian Martella, Carlo Grazianetti

Two-Dimensional Epitaxial Xenes: Genesis, Synthesis, Main Properties, and Processing Paths for Technology Applications*

2023 IEEE Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 409-410

Pinaka Pani Tummala, Alessandro Cataldo, Christian Martella, Gabriele Ferrini, Carlo Spartaco Casari, Alessandro Molle, Valeri Afanas’Ev, Alessio Lamperti

Role of Precursors Chemistry on the Growth and Band Alignment of Few-Layers MoS2 From Liquid Chemical Vapor Deposition

2023 IEEE Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 411-415

Pinaka Pani Tummala, Alessandro Cataldo, Christian Martella, Sara Ghomi, Alessandro Molle, Alessio Lamperti

Impact of precursor chemistry on energy band alignment of few layer MoS2 grown by AP-CVD at interface with SiO2

FISMAT 2023, Date: 2023/09/04-2023/09/08, Location: Milano Italy [],

Giacomo Inzani, Lyudmyla Adamska, Amir Eskandari-asl, Nicola Di Palo, Gian Luca Dolso, Bruno Moio, Luciano Jacopo D’Onofrio, Alessio Lamperti, Alessandro Molle, Rocío Borrego-Varillas, Mauro Nisoli, Stefano Pittalis, Carlo Andrea Rozzi, Adolfo Avella, Matteo Lucchini

Light-Driven Attosecond Photoinjection in Germanium

The European Conference on Lasers and Electro-Optics [Optica Publishing Group], Pages: cg_2_2

Giacomo Inzani, Lyudmyla Adamska, Luciano Jacopo D’Onofrio, Bruno Moio, Gian Luca Dolso, Nicola Di Palo, Amir Eskandari-asl, Alessio Lamperti, Alessandro Molle, Carlo Andrea Rozzi, Rocío Borrego-Varillas, Mauro Nisoli, Stefano Pittalis, Adolfo Avella, Matteo Lucchini

Attosecond Inter-and Intra-Band Charge Carrier Dynamics in Germanium

International Conference on Ultrafast Phenomena [Optica Publishing Group], Pages: W4A. 32

Pinaka Pani Tummala, Alessio Lamperti, Alessandro Molle

Two-dimensional Molybdenum disulfide (MoS2): CVD Synthesis, characterization and opto-electronic properties

Ettore Majorana Foundation and Centre for Scientific Culture_Phenomenon of 1/f noise in condensed matter physics, Date: 2022/04/24-2022/04/29, Location: Erice (Italy) [],

Pinaka Pani Tummala, Christian Martella, Alessandro Molle, Alessio Lamperti

Different Strategies to obtain MoS2 nanosheets by implementing CVD on different substrates

International Conference on Newtimes and New trends in Material Science and thin Films, Date: 2021/06/14-2021/06/18, Location: Online [],

A Camellini, C Mennucci, E Cinquanta, C Martella, A Mazzanti, A Lamperti, A Molle, F Buatier de Mongeot, G Della Valle, M Zavelani Rossi

Linear and Nonlinear Optical Properties of Anisotropic Few-Layer MoS2 sheets

E-MRS 2018 Fall Meeting [],

Andrea Camellini, Eugenio Cinquanta, Christian Martella, Carlo Mennucci, Alessio Lamperti, Giulio Cerullo, Giuseppe Della Valle, Alessandro Molle, Francesco Buatier de Mongeot, Margherita Zavelani-Rossi

Optical characterization of anisotropic MoS 2 nanosheets

2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) [IEEE], Pages: 1-1

Eugenio Cinquanta, Guido Fratesi, Stefano Dal Conte, Carlo Grazianetti, Francesco Scotognella, Salvatore Stagira, Caterina Vozzi, Giovanni Onida, Alessandro Molle

Ultrafast carrier dynamics of epitaxial silicene

Ultrafast Phenomena and Nanophotonics XXI [International Society for Optics and Photonics], Volume: 10102 Pages: 101020J

G Fratesi, E Cinquanta, SD Conte, C Grazianetti, F Scotognella, S Stagira, C Vozzi, A Molle, G Onida

Optical response and ultrafast carrier dynamics of silicene on silver

CMD [],

G Fratesi, E Cinquanta, SD Conte, C Grazianetti, F Scotognella, S Stagira, C Vozzi, A Molle, G Onida

Optical response and ultrafast carrier dynamics of silicene on silver

CMD [],

S Paleari, A Molle, A Lamperti, M Fanciulli

Negative-U trapping centers evidenced by admittance spectroscopy at the Ge/GeO2 interface

E-MRS spring meeting [],

S Vangelista, E Cinquanta, C Martella, M Longo, A Lamperti, R Mantovan, M Alia, F BASSO BASSET, F PEZZOLI, A Molle

The Role of Deposition Temperature and Substrate for Scalable and Uniform Deposition of MoS2 Grown by Vapour-Solid Chemical Reaction

GraphITA 2015 [],

Alessandro Molle

InGaAs Channels

224th ECS Meeting (October 27 ñ November 1, 2013) [Ecs],

Eugenio Cinquanta, Emilio Scalise, Daniele Chiappe, Carlo Grazianetti, Bas van den Broek, Michel Houssa, Marco Fanciulli, Alessandro Molle

Raman spectrum of epitaxial silicene

2013 MRS Spring Meeting, Date: 2013/04/01-2013/04/05, Location: San Francisco [Materials Research Society],

Carlo Grazianetti, Alessandro Molle

Xene heterostructures

Xenes [Woodhead Publishing], Pages: 377-403

Carlo Grazianetti, Christian Martella, Alessandro Molle

Two-dimensional Xenes and their device concepts for future micro-and nanoelectronics and energy applications

Emerging 2D Materials and Devices for the Internet of Things [Elsevier], Pages: 181-219

Li Tao, Eugenio Cinquanta, Carlo Grazianetti, Alessandro Molle, Deji Akinwande

Encapsulated Silicene Field-Effect Transistors

Silicene [Springer, Cham], Pages: 235-254

C Grazianetti, A Molle

Silicene in the Flatland

GraphITA [Springer, Cham], Pages: 137-152

Alessandro Molle

Epitaxial Graphene: Progress on Synthesis and Device Integration

2D Materials for Nanoelectronics [CRC Press], Pages: 53-68

Alessandro Molle

Phosphorene: A Novel 2D Material for Future Nanoelectronics and Optoelectronics

2D Materials for Nanoelectronics [CRC Press], Pages: 425-448

Alessandro Molle

Physico-Chemical Characterisation of MoS2/Metal and MoS2/Oxide Interfaces

2D Materials for Nanoelectronics [CRC Press], Pages: 179-222

Alessandro Molle

Metal Contacts to Graphene

2D Materials for Nanoelectronics [CRC Press], Pages: 69-94

Alessandro Molle

TMD-Based Photodetectors, Light Emitters and Photovoltaics

2D Materials for Nanoelectronics [CRC Press], Pages: 257-288

Alessandro Molle

High-Field and Thermal Transport in Graphene

2D Materials for Nanoelectronics [CRC Press], Pages: 123-154

Alessandro Molle

Structural, Electronic and Transport Properties of Silicene and Germanene

2D Materials for Nanoelectronics [CRC Press], Pages: 347-364

Alessandro Molle

Transition Metal Dichalcogenide Schottky Barrier Transistors: A Device Analysis and Material Comparison

2D Materials for Nanoelectronics [CRC Press], Pages: 223-256

Alessandro Molle

Stannene: A Likely 2D Topological Insulator

2D Materials for Nanoelectronics [CRC Press], Pages: 395-424

Alessandro Molle

Optoelectronics, Mechanical Properties and Strain Engineering in MoS2

2D Materials for Nanoelectronics [CRC Press], Pages: 289-316

Alessandro Molle

Graphene for RF Analogue Applications

2D Materials for Nanoelectronics [CRC Press], Pages: 95-122

Alessandro Molle

Device Physics and Device Mechanics for Flexible TMD and Phosphorene Thin-Film Transistors

2D Materials for Nanoelectronics [CRC Press], Pages: 317-344

Alessandro Molle

Theory of the Structural, Electronic and Transport Properties of Graphene

2D Materials for Nanoelectronics [CRC Press], Pages: 19-52

Alessandro Molle

Theoretical Study of Transition Metal Dichalcogenides

2D Materials for Nanoelectronics [CRC Press], Pages: 157-178

Alessandro Molle

2D Crystal-Based Heterostructures for Nanoelectronics

2D Materials for Nanoelectronics [CRC Press], Pages: 449-470

Alessandro Molle

Group IV Semiconductor 2D Materials: The Case of Silicene and Germanene

2D Materials for Nanoelectronics [CRC Press], Pages: 365-394

Alessandro Molle, Dimitra Tsoutsou, Athanasios Dimoulas

Group IV Semiconductor 2D Materials

2D Materials for Nanoelectronics [CRC Press], Volume: 17 Pages: 349

Michel Houssa, Athanasios Dimoulas, Alessandro Molle

2D Materials for Nanoelectronics

[CRC Press], Pages: 1-467

E Cinquanta, SD Conte, D Chiappe, C Grazianetti, M Fanciulli, A Molle, G Cerullo, Salvatore Stagira, Francesco Scotognella, C Vozzi

Ultrafast dynamics in epitaxial silicene on Ag (111)

Ultrafast Phenomena XIX [Springer, Cham], Pages: 329-332

People