-A A +A
Surname: 
Molle
Firstname: 
Alessandro
Position: 
Staff
Profile: 
Senior Researcher
Phone: 
+39 0396032884
Curriculum: 

Contacts

e-mail: alessandro.molle@mdm.imm.cnr.it

Skype ID: alessandro_molle

Twitter: @AlessandroMolle

 

News

 

2020 MRS Spring Meeting

MRS 2020 Spring Meeting    

Symposium NM06 - Theory and Characterization of 2D Materials - Bridging Atomic Structure and Device Performance

Deadline: October 31, 2019 11:59 PM

 

Job Openings


Future positions:
- Post-Doc fellowship / PhD grant on the processing, device fabrication and (electrical) testing of Xenes
- Post-Doc fellowship / PhD grant on the in situ ARPES characterization of Xenes
Contact:  Alessandro Molle

Honoured to be awarded with an ERC Consolidator Grant 2017,

@ERC_Research, #ERC,

for a project on the Fabrication of Xenes (XFab), #Xeni

 

Press release, @StampaCnr

https://www.cnr.it/it/intervento-presidente/7799/assegnato-al-cnr-un-consolidator-grant-dell-erc

 

 

 

 

ERC through the media

Rai 3 - TGLeonardo

Rai1-UnoMattina

Radio3

 

Xenes on the Radio!  Listen to my interview on Radio24 "SmartCity" at: http://www.radio24.ilsole24ore.com/programma/smart-city/linvasione-xeni-094806-gSLAtGEEFC (dated March 8th, 2017) about the Xene invasion!

 

 

About

Short Bio. Alessandro Molle graduated in 2001 at the University of Genova (Italy) with a master thesis on the nanocrystal formation during the homoepitaxial growth Al/Al(110). He obtained the PhD degree in Materials Science at the same University in April, 2005 with a thesis on the sputter-induced fabrication of periodic and nanoscaled patterns on fcc (110) metal surfaces after spending several beam times at the European Synchrotron Radiation Facility (ESRF) in Grenoble . He lso focused on the use of High Resolution Spot Profile Analysis Low Energy Electron Diffraction (SPA-LEED). In February 2005, he joined the MDM National Laboratory (formerly with INFM, now with the CNR-IMM) as a Post-Doc Fellow involved in the Molecular Beam Epitaxial Growth of high-k oxide thin films on semiconductor and of semiconductor thin films on metal oxides within the European Project ET4US. His activity was related to the in situ structural and chemical characterization of thin films by means of Reflection High Energy Reflection (RHEED), X-ray Photoelectron Spectroscopy (XPS) and Low Energy Ion Scattering Spectroscopy (LEISS). He was then involved in the surface passivation of high-mobility semiconductors (Ge and III-V compunds), for the subsequent deposition of high-k materials targeting ultra-scaled metal oxide semiconductor (MOS) structures for a Post-Si era of digital devices (in the framework of bilateral collaboration projects with IMEC, Belgium).

He was the principal investigator at CNR-IMM in the research activity related to the European Project "2D-Nanolattices: Strongly Anisotropic Graphite-like Semiconductor-Dielectric 2D Nanolattices" started from June 1st, 2011.The core-idea of that activity is to identify the basic properties of the epitaxial silicene, namely the silicon counterpart of graphene, including the structural arrangement, the elelctronic state, and the vibrational spectrum. Integration of epitaxial silicene in a field effect transistor has been achieved in collaboration with the group of Prof. Akinwande, Univ. of Texas at Austin. He currently supervised the unit activity on 2D materials beyond graphene including the epitaxial growth of Xenes (silicene, germanene, stanene, and phosphorene) on substrates, and the chemical vapor deposition of flat and patterned nanosheets of transistion metal dichalcogenides (MoS2, WS2, etc.). He has been awarded an ERC COG 2017 grant (XFab) on the fabrication and technological implementation of Xenes.

He served as a co-chair of the academic course "Surface and Interface" with Prof. M. Fanciulli from 2011 to 2015 (3 years) and as a chair of a PhD course (2018) on 2D Materials at the University of Milano Bicocca. He has been co-editor of a CRC book entitled "2D Materials for Nanoelectronics", published by CRC Press (Taylor&Francis group) on April 2016. He will be NM06 Symposium organizer at the MRS 2020 Spring Meeting in Phoenix, and co-director of the Epioptics-16&Xene-4 Intnl School in Erice, July 2019.
 

Skills. Molecular Beam Epitaxy (MBE) and in situ surface characterization (RHEED, XPS, LEIS, STM);

Admittance spectroscopy and electrical characterization of MOS capacitor;

Raman scattering spectroscopy.

 

Projects. Local PI in the framework of the the FP7 FET-Open project "2D-Nanolattices" (201-14); PI of the CNR grant "Joint Lab" in collaboration with the group of Prof. Akinwande, Univ. of Texas at Austin (2014-17);  PI of the "CrystEL" project founded by the Fondazione CARIPLO and Regione Lombardia aiming at the enhanced competitiveness within the ERC calls (18 month since Oct. 2016), and local PI of the regional project "I-ZEB" founded by Regione Lombardia and CNR; Local PI of the I-ZEB project funded by Regione Lombardia; PI of the ERC-COG 2017 grant "XFab" project.

 

Dissemination. In 2010, he co-chaired Symposium H "Post-Si CMOS electronic devices: the role of Ge and III-V materials" at the E-MRS 2010 Spring Meeting; Symposium I "The route to Post-Si CMOS devices: from high-mobility channels to graphene-like nanosheets" at the E-MRS 2013 Spring Meeting, Strasbourg, the Symposium Z "Two-dimensional crystals and their van der Waals heterostructures for nanoelectronics", E-MRS 2016 Spring Meeting, Lille; Symposium NM06 "Theory and Characterization of 2D Materials - Bridging Atomic Structutre and Device Performance", MRS 2020 Spring Meeting, Phoenix (AZ).

He is co-editor of a book entitled "2D materials for nanoelectronics"  published CRC Press (Taylor & Francis group). He is co-authors of two topical reviews ("Silicene:A review of recent experimental and theoretical investigations" published by J. Phys: Cond. Matter and "Two-dimensional silicon: the advent of silicene" published on 2D Materials) and a monographic chapter on the topic of silicene and Xenes. He is author and co-athor of more than 75 peer-reviewed articles in international scientific journals, he received more than 20 invitations to international conferences (including APS, ECS , and AVS meeting) for his contributions to the Ge/III-V issues and 2D materials issues, and he served as reviewer for European universities and institutions, and for several scientific journals (including Advanced Materials, Nano Letters, Physical Review Letters,).

Find me on:

                                                                    

Academia.edu

 

ResearchGate

Loop

 

 

ORCID ID: orcid.org/0000-0002-3860-4120

ResearcherID:  D-8952-2013

Scopus Author ID:  15123116600

 

Highlights

   2019

    Epitaxial Phosphorene at hand

    C. Grazianetti, G. Faraone, C.Martella, E. Bonera, and A. Molle, "Embedding epitaxial   (blue) phosphorene in between device-compatible functional layers" Nanoscale (2019) DOI: 10.1039/C9NR06037E

 

 

 

 

2018

Optical conductivity of 2D silicon

C. Grazianetti, S. La Rosa, C. Martella, P. Targa, D. Codegoni, P. gori, O. Pulci, A. Molle*, and S. Lupi*, "Optical Conductivity of Two-Dimensional Silicon: Evidence of Dirac Electrodynamics" Nano Letters 2018, DOI: 10.1021/acs.nanolett.8b03169

 

 

 

All about silicene

A. Molle, C. Grazianetti*, L. Tao*, D. Taneja, Md. Hasibul Halam, and D. Akiwande*, "Silicene, silicene derivatives, and theri device applications" Chem. Soc. Rev. 2018, 47, 6370-6387   DOI:10.1039/C8CS00338F (2018)

 

 

 

 

 

Anisotropy at the 2D level by design

C. Martella, C. Mennucci, A. Lamperti, E. Cappelluti,
F. Buatier de Mongeot, and A. Molle*, "Designer Shape Anisotropy on Transition-Metal-Dichalcogenide Nanosheets", Advanced Materials (2018), DOI: 10.1002/adma.201705615

 

 

 

 

 

 

2017

Silicene goes Multilayer!

C. Grazianetti, E. Cinquanta, L. Tao, P. De Padova, C. Quaresima, C. Ottaviani, D. Akinwande, and A. Molle, "Silicon Nanosheets: Crossover between Multilayer Silicene and Diamond-like Growth Regime" ACS Nano (2017), DOI: 10.1021/acsnano.7b00762

 

 

A perspective on two-dimensional Xenes

A. Molle, J. Goldberger, M. Houssa, Y. Xu, S.-C. Zhang, and D. Akinwande,

"Buckled two-dimensional Xene sheets",

Nature Materials, 16, 163 (2017)    DOI: 10.1038/NMAT4802 (2017)

 

 

 

 

 

 

 

 

 

2015

The silicene transistor

L. Tao, E. Cinquanta, D. Chiappe, C. Grazianetti, M. Fanciulli, M. Dubey, A. Molle, and D. Akinwande, "Silicene field-effect-transistors operating at room temperature" Nature Nanotechnology 10, 227 (2015), doi:10.1038/nnano.2014.325 

See also: "2D Materials: Silicene Transistors", G. Le Lay, Nature Nnotechnology | News & Views,  doi:10.1038/nnano.2015.10

 

 

Research

  • 2D buckled Xene sheets. Growing new 2D materials of single element X ranging from silicene to germanene to stanene and phosphorene, generally termed Xenes, is a new research frontier aiming to expand the common knowledge in materials science, nanotechnology, and physics. The activity basically relies on the epitaxy on substrates and subsequent processing towards device integration. One approach is the encapsulation + delamination from cleavable substrates, see the realization of the silicene transistor here. An alternative aproach is Xene template engineering, namely the quest for substrate suitable for the commensurate growth or the van der Waals epitaxy of a Xene single layer. See the case of silicene on MoS2  here and the related heterosheet transistor here. MSc/PhD thesis openings available for this activity.

 

  • Chemical vapor deposition of transistion metal dichalcogenides (TMDs) and their van der Waals heterostructures. TMDs like MoS2 are one of the more feasible 2D platform for nanotechnology. They can be utilized in nanoelectronics (eithr for logic and memory devices as well as for flexible electronics), optolectronics, photonics, chemical and bio- sensing, energy and hydrogen evolution reaction, etc. The big challenge for the TMD production is the large-scale synthesis. We address this issue by a cost-effective furnace-based chemical vapor deposition approach starting from a solid film precursor of the transition metal on a substrate (for more details see here). This approach enables us to have large area, conformal and thickness controlled TMD nanosheets that can be used as building blocks for van der Waal heterostructures. Target applications are: ultra-scaled field effect transistors, hybrid heterostructures for light emitting diodes and photovoltaic cells. MSc/PhD thesis openings available for this activity.
  • Anisotropy at the 2D level. TMD as well graphene are isotropic in nature. Making them anisotropic may open a wealth of unexplored properties descending from the local manipulation of the 2D lattice. We induce a one-directional anisotropy in MoS2 nanosheet as a consequence of a conformal growth on a pre-patterned substrate. Target applications are: exciton engineering and strain tuning towards single photon emitter production, platforms for hydrogen evolution reaction. MSc thesis openings available for this activity.

  • Transition metal ditellurides as Weyl semimetal ultrathin films. MoTe2 and WTe2 can be synthesized as ultrathin films and reduced to a octahedral phase hosting so-called Weyl fermions in their electronic structure. This may lead to to the emergence of topological Weyl semimetallic state in an ultrathin film configuration with high potential for technology applications. One example in this respect is the coupling with a ferromagnetic counterpart so as to follow new paths for spin manipulation towards spintronics forefronts. This route will be followed within the framework of a H2020 FET-Proactive project "Skytop" at the CNR-IMM.

 

 

 

 

 

 

 

 

 

Scientific Production

Carlo Grazianetti, Christian Martella, Alessandro Molle

The Xenes Generations: A Taxonomy of Epitaxial Single‐Element 2D Materials

Physica Status Solidi (RRL) [Wiley],

Carlo Grazianetti, Christian Martella, Alessandro Molle

The Xenes Generations: A Taxonomy of Epitaxial Single‐Element 2D Materials

Physica Status Solidi RRL [Wiley],

Christian Martella, Luca Ortolani, Elena Cianci, Alessio Lamperti, Vittorio Morandi, Alessandro Molle

Large-area patterning of substrate-conformal MoS2 nano-trenches

Nano Research [Tsinghua University Press], Volume: 12 Issue: 8 Pages: 1851-1854

Carlo Grazianetti, Gabriele Faraone, Christian Martella, Emiliano Bonera, Alessandro Molle

Embedding epitaxial (blue) phosphorene in between device-compatible functional layers

Nanoscale [Royal Society of Chemistry],

Carlo Grazianetti, Stefania De Rosa, Christian Martella, Paolo Targa, Davide Codegoni, Paola Gori, Olivia Pulci, Alessandro Molle, Stefano Lupi

Optical Conductivity of Two-Dimensional Silicon: Evidence of Dirac Electrodynamics

Nano letters [American Chemical Society], Volume: 18 Issue: 11 Pages: 7124-7132

Roberto Mantovan, Yuri Matveyev, Giovanni Vinai, Christian Martella, Piero Torelli, Alessandro Molle, Sergei Zarubin, Yuri Lebedinskii, Andrei Zenkevich

Bonding Character and Magnetism at the Interface Between Fe and MoS2 Nanosheets

physica status solidi (a) [], Volume: 215 Issue: 13 Pages: 1800015

Andrea Camellini, Carlo Mennucci, Eugenio Cinquanta, Christian Martella, Andrea Mazzanti, Alessio Lamperti, Alessandro Molle, Francesco Buatier de Mongeot, Giuseppe Della Valle, Margherita Zavelani-Rossi

Ultrafast Anisotropic Exciton Dynamics In Nanopatterned MoS2 Sheets

ACS Photonics [American Chemical Society], Volume: 5 Issue: 8 Pages: 3363-3371

M. Ezawa, E. Salomon, P. De Padova, D. Solonenko, P. Vogt, M. E. Dávila, A. Molle, T. Angot, G. Le Lay

Fundamentals and functionalities of silicene, germanene, and stanene

La Rivista del Nuovo Cimento [Società Italiana di Fisica], Volume: 41 Issue: 3 Pages: 175-224

M. Ezawa, E. Salomon, P. De Padova, D. Solonenko, P. Vogt, M. E. Dávila, A. Molle, T. Angot, G. Le Lay

Fundamentals and functionalities of silicene, germanene, and stanene

La Rivista del Nuovo Cimento [Società Italiana di Fisica], Volume: 41 Issue: 3 Pages: 175-224

Christian Martella, Carlo Mennucci, Alessio Lamperti, Emmanuele Cappelluti, Francesco Buatier de Mongeot, Alessandro Molle

Designer Shape Anisotropy on Transition‐Metal‐Dichalcogenide Nanosheets

Advanced Materials [],

Alessandro Molle, Carlo Grazianetti, Li Tao, Deepyanti Taneja, Md Hasibul Alam, Deji Akinwande

Silicene, silicene derivatives, and their device applications

Chemical Society Reviews [Royal Society of Chemistry], Volume: 47 Issue: 16 Pages: 6370-6387

Christian Martella, Carlo Mennucci, Eugenio Cinquanta, Alessio Lamperti, Emmanuele Cappelluti, Francesco Buatier de Mongeot, Alessandro Molle

Anisotropic MoS2 Nanosheets Grown on Self‐Organized Nanopatterned Substrates

Advanced Materials [], Volume: 29 Issue: 19 Pages: 1605785

Eugenio Cinquanta, Andrea Camellini, Christian Martella, Carlo Mennucci, Alessio Lamperti, Giuseppe Della Valle, Margherita Zavelani Rossi, Francesco Buatier de Mongeot, Alessandro Molle, Salvatore Stagira

Anisotropic ultrafast response of MoS $ _ {\mathrm {2}} $ on rippled substrates

Bulletin of the American Physical Society [American Physical Society], Volume: 62

Carlo Grazianetti, Eugenio Cinquanta, Li Tao, Paola De Padova, Claudio Quaresima, Carlo Ottaviani, Deji Akinwande, Alessandro Molle

Silicon Nanosheets: Crossover between Multilayer Silicene and Diamond-like Growth Regime

ACS nano [American Chemical Society], Volume: 11 Issue: 3 Pages: 3376-3382

Alessandro Molle, Joshua Goldberger, Michel Houssa, Yong Xu, Shou-Cheng Zhang, Deji Akinwande

Buckled two-dimensional Xene sheets

Nature materials [Nature Research],

Christian Martella, Carlo Mennucci, Alessio Lamperti, Emmanuele Cappelluti, Francesco Buatier de Mongeot, Alessandro Molle

Designer Shape Anisotropy on Transition‐Metal‐Dichalcogenide Nanosheets

Advanced Materials [],

F Fabbri, E Rotunno, E Cinquanta, D Campi, E Bonnini, D Kaplan, L Lazzarini, M Bernasconi, C Ferrari, M Longo, G Nicotra, A Molle, V Swaminathan, G Salviati

Novel near-infrared emission from crystal defects in MoS2 multilayer flakes

Nature communications [Nature Publishing Group], Volume: 7 Pages: 13044

F Fabbri, E Rotunno, E Cinquanta, D Campi, E Bonnini, D Kaplan, L Lazzarini, M Bernasconi, C Ferrari, M Longo, G Nicotra, A Molle, V Swaminathan, G Salviati

Novel near-infrared emission from crystal defects in MoS2 multilayer flakes

Nature communications [Nature Publishing Group], Volume: 7 Pages: 13044

Christian Martella, Pierpaolo Melloni, Eugenio Cinquanta, Elena Cianci, Mario Alia, Massimo Longo, Alessio Lamperti, Silvia Vangelista, Marco Fanciulli, Alessandro Molle

Engineering the Growth of MoS2 via Atomic Layer Deposition of Molybdenum Oxide Film Precursor

Advanced Electronic Materials [], Volume: 2 Issue: 10 Pages: 1600330

Alessandro Molle

Xenes: A new emerging two-dimensional materials platform for nanoelectronics

ECS Transactions [The Electrochemical Society], Volume: 75 Issue: 5 Pages: 163-173

Alessandro Molle

(Invited) Xenes: A New Emerging Two-Dimensional Materials Platform for Nanoelectronics

ECS Transactions [The Electrochemical Society], Volume: 75 Issue: 5 Pages: 163-173

Alessandro Molle, Carlo Grazianetti, Eugenio Cinquanta

Silicene: Silicon at the Two Dimensional Limit and Its Applications to Nanoelectronics

ECS Transactions [The Electrochemical Society], Volume: 75 Issue: 8 Pages: 703-709

Alessandro Molle, Carlo Grazianetti, Eugenio Cinquanta

(Invited) Silicene: Silicon at the Two Dimensional Limit and Its Applications to Nanoelectronics

ECS Transactions [The Electrochemical Society], Volume: 75 Issue: 8 Pages: 703-709

Alessandro Molle, Filippo Fabbri, Davide Campi, Alessio Lamperti, Enzo Rotunno, Eugenio Cinquanta, Laura Lazzarini, Daniel Kaplan, Venkataraman Swaminathan, Marco Bernasconi, Massimo Longo, Giancarlo Salviati

Evidence of Native Cs Impurities and Metal–Insulator Transition in MoS2 Natural Crystals

Advanced Electronic Materials [], Volume: 2 Issue: 6 Pages: 1600091

E Rotunno, F Fabbri, E Cinquanta, D Kaplan, M Longo, L Lazzarini, A Molle, V Swaminathan, G Salviati

Structural, optical and compositional stability of MoS2 multi-layer flakes under high dose electron beam irradiation

2D Materials [IOP Publishing], Volume: 3 Issue: 2 Pages: 025024

Max C Lemme, Frank Schwierz, M Houssa, A Dimoulas, A Molle

Graphene for RF analogue applications

2D Materials for Nanoelectronics [CRC Press], Volume: 17 Pages: 79

Silvia Vangelista, Eugenio Cinquanta, Christian Martella, Mario Alia, Massimo Longo, Alessio Lamperti, Roberto Mantovan, Francesco Basso Basset, Fabio Pezzoli, Alessandro Molle

Towards a uniform and large-scale deposition of MoS2 nanosheets via sulfurization of ultra-thin Mo-based solid films

Nanotechnology [IOP Publishing], Volume: 27 Issue: 17 Pages: 175703

Alessandro Molle, Alessio Lamperti, Davide Rotta, Marco Fanciulli, Eugenio Cinquanta, Carlo Grazianetti

Electron Confinement at the Si/MoS2 Heterosheet Interface

Advanced Materials Interfaces [Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim],

Carlo Grazianetti, Eugenio Cinquanta, Alessandro Molle

Two-dimensional silicon: the advent of silicene

2D Materials [IOP Publishing], Volume: 3 Issue: 1 Pages: 012001

Eugenio Cinquanta, Guido Fratesi, Stefano dal Conte, Carlo Grazianetti, Francesco Scotognella, Salvatore Stagira, Caterina Vozzi, Giovanni Onida, Alessandro Molle

Optical response and ultrafast carrier dynamics of the silicene-silver interface

Physical Review B [American Physical Society], Volume: 92 Issue: 16 Pages: 165427

Marco Fanciulli, Matteo Belli, Stefano Paleari, Alessio Lamperti, Alessandro Molle, Mauro Sironi, Antonio Pizio

(Invited) Defects and Dopants in Silicon and Germanium Nanowires

ECS Transactions [The Electrochemical Society], Volume: 69 Issue: 5 Pages: 69-79

Marco Fanciulli, Matteo Belli, Stefano Paleari, Alessio Lamperti, Alessandro Molle, Mauro Sironi, Antonio Pizio

Defects and Dopants in Silicon and Germanium Nanowires

ECS Transactions [The Electrochemical Society], Volume: 69 Issue: 5 Pages: 69-79

C Grazianetti, D Chiappe, E Cinquanta, M Fanciulli, A Molle

Nucleation and temperature-driven phase transitions of silicene superstructures on Ag (1 1 1)

Journal of Physics: Condensed Matter [IOP Publishing], Volume: 27 Issue: 25 Pages: 255005

Li Tao, Eugenio Cinquanta, Carlo Grazianetti, Alessandro Molle, Deji Akinwande

(Invited) Nanoelectronics Based on Silicene

Meeting Abstracts [The Electrochemical Society], Issue: 9 Pages: 854-854

Li Tao, Eugenio Cinquanta, Carlo Grazianetti, Alessandro Molle, Deji Akinwande

Nanoelectronics Based on Silicene

Meeting Abstracts [The Electrochemical Society], Issue: 9 Pages: 854-854

Alessandro Molle, Daniele Chiappe, Davide Rotta, Alessio Lamperti, Carlo Grazianetti, Eugenio Cinquanta, Marco Fanciulli

Electron confinement at the Si-MoS2 heterosheet junction

Bulletin of the American Physical Society [American Physical Society], Volume: 60

Eugenio Cinquanta, Li Tao, Guido Fratesi, Carlo Grazianetti, Marco Fanciulli, Giovanni Onida, Deji Akinwande, Alessandro Molle

Silicene on Silver: fundamental physical properties and integration in Field-Effect Transistors

Bulletin of the American Physical Society [American Physical Society], Volume: 60

Li Tao, Eugenio Cinquanta, Daniele Chiappe, Carlo Grazianetti, Marco Fanciulli, Madan Dubey, Alessandro Molle, Deji Akinwande

Silicene field-effect transistors operating at room temperature

Nature nanotechnology [Nature Publishing Group], Volume: 10 Issue: 3 Pages: 227

L Tao, P Sinsermsuksakul, P Yang

Nature Nanotechnol

Lett [], Volume: 10 Pages: 227-231

Alessio Lamperti, Alessandro Molle, Elena Cianci, Claudia Wiemer, S Spiga, M Fanciulli

Effect on Al: MO 2/In 0.53 Ga 0.47 As interface (M= Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition

Thin Solid Films [Elsevier], Volume: 563 Pages: 44-49

Alessio Lamperti, Alessandro Molle, Elena Cianci, Claudia Wiemer, S Spiga, M Fanciulli

Effect on Al: MO2/In0. 53Ga0. 47As interface (M= Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition

Thin Solid Films [Elsevier], Volume: 563 Pages: 44-49

Emilio Scalise, Michel Houssa, Emilio Cinquanta, Caludio Grazianetti, Bas van den Broek, Geoffrey Pourtois, Andre Stesmans, Marco Fanciulli, Allessandro Molle

Engineering the electronic properties of silicene by tuning the composition of MoX2 and GaX (X= S, Se, Te) chalchogenide templates

2D Materials [IOP Publishing], Volume: 1 Issue: 1 Pages: 011010

Daniele Chiappe, Emilio Scalise, Eugenio Cinquanta, Carlo Grazianetti, Bas van den Broek, Marco Fanciulli, Michel Houssa, Alessandro Molle

Two‐Dimensional Si Nanosheets with Local Hexagonal Structure on a MoS2 Surface

Advanced Materials [], Volume: 26 Issue: 13 Pages: 2096-2101

Elena Cianci, Alessandro Molle, Alessio Lamperti, Claudia Wiemer, Sabina Spiga, Marco Fanciulli

Phase Stabilization of Al: HfO2 Grown on In x Ga1–x As Substrates (x= 0, 0.15, 0.53) via Trimethylaluminum-Based Atomic Layer Deposition

ACS applied materials & interfaces [American Chemical Society], Volume: 6 Issue: 5 Pages: 3455-3461

Michel Houssa, Bas van den Broek, Emilio Scalise, B Ealet, G Pourtois, D Chiappe, E Cinquanta, C Grazianetti, M Fanciulli, A Molle, VV Afanas’Ev, Andre Stesmans

Theoretical aspects of graphene-like group IV semiconductors

Applied Surface Science [North-Holland], Volume: 291 Pages: 98-103

Carlo Grazianetti, Daniele Chiappe, Eugenio Cinquanta, Grazia Tallarida, Marco Fanciulli, Alessandro Molle

Exploring the morphological and electronic properties of silicene superstructures

Applied Surface Science [North-Holland], Volume: 291 Pages: 109-112

Stefano Paleari, A Molle, F Accetta, A Lamperti, E Cianci, M Fanciulli

Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge (111)/GeO 2 interface after capping with Al 2 O 3 layer

Applied Surface Science [North-Holland], Volume: 291 Pages: 3-5

Emilio Scalise, E Cinquanta, Michel Houssa, Bas van den Broek, D Chiappe, C Grazianetti, G Pourtois, B Ealet, A Molle, M Fanciulli, VV Afanas’Ev, Andre Stesmans

Vibrational properties of epitaxial silicene layers on (111) Ag

Applied Surface Science [North-Holland], Volume: 291 Pages: 113-117

Stefano Paleari, A Molle, F Accetta, A Lamperti, E Cianci, M Fanciulli

Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge (1 1 1)/GeO2 interface after capping with Al2O3 layer

Applied Surface Science [North-Holland], Volume: 291 Pages: 3-5

Alessandro Molle, Athanasios Dimoulas, Guy Le Lay, Max Lemme

Special Issue: The route to post-Si CMOS devices: From high mobility channels to graphene-like 2D nanosheets

Applied Surface Science [], Issue: 291 Pages: 1-2

Alessandro Molle, Athanasios Dimoulas, Guy Le Lay, Max Lemme

The route to post-Si CMOS devices: From high mobility channels to graphene-like 2D nanosheets

Applied Surface Science [], Issue: 291 Pages: 1-2

P Tsipas, S Kassavetis, D Tsoutsou, E Xenogiannopoulou, EGSA Golias, SA Giamini, C Grazianetti, D Chiappe, A Molle, M Fanciulli, A Dimoulas

Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag (111)

Applied Physics Letters [AIP], Volume: 103 Issue: 25 Pages: 251605

Alessandro Molle, Carlo Grazianetti, Daniele Chiappe, Eugenio Cinquanta, Elena Cianci, Grazia Tallarida, Marco Fanciulli

Nanostructures: Hindering the Oxidation of Silicene with Non‐Reactive Encapsulation (Adv. Funct. Mater. 35/2013)

Advanced Functional Materials [WILEY‐VCH Verlag], Volume: 23 Issue: 35 Pages: 4339-4339

Alessandro Molle, Carlo Grazianetti, Daniele Chiappe, Eugenio Cinquanta, Elena Cianci, Grazia Tallarida, Marco Fanciulli

Hindering the oxidation of silicene with non‐reactive encapsulation

Advanced Functional Materials [WILEY‐VCH Verlag], Volume: 23 Issue: 35 Pages: 4340-4344

Alessandro Molle, Daniele Chiappe, Eugenio Cinquanta, Carlo Grazianetti, Marco Fanciulli, Emilio Scalise, Bas van den Broek, Michel Houssa

(Invited) Structural and Chemical Stabilization of the Epitaxial Silicene

ECS Transactions [The Electrochemical Society], Volume: 58 Issue: 7 Pages: 217-227

Alessandro Molle, Daniele Chiappe, Eugenio Cinquanta, Carlo Grazianetti, Marco Fanciulli, Emilio Scalise, Bas van den Broek, Michel Houssa

Structural and chemical stabilization of the epitaxial silicene

ECS Transactions [The Electrochemical Society], Volume: 58 Issue: 7 Pages: 217-227

Eugenio Cinquanta, Emilio Scalise, Daniele Chiappe, Carlo Grazianetti, Bas van den Broek, Michel Houssa, Marco Fanciulli, Alessandro Molle

Getting through the nature of silicene: An sp2–sp3 two-dimensional silicon nanosheet

The Journal of Physical Chemistry C [American Chemical Society], Volume: 117 Issue: 32 Pages: 16719-16724

Stefano Paleari, Silvia Baldovino, Alessandro Molle, Marco Fanciulli

Evidence of trigonal dangling bonds at the Ge (111)/Oxide interface by electrically detected magnetic resonance

Physical review letters [American Physical Society], Volume: 110 Issue: 20 Pages: 206101

Gabriele Congedo, Claudia Wiemer, Alessio Lamperti, Elena Cianci, Alessandro Molle, Flavio G Volpe, Sabina Spiga

Atomic layer-deposited Al–HfO 2/SiO 2 bi-layers towards 3D charge trapping non-volatile memory

Thin Solid Films [Elsevier], Volume: 533 Pages: 9-14

Alessandro Molle, Elena Cianci, Alessio Lamperti, Claudia Wiemer, Silvia Baldovino, Luca Lamagna, Sabina Spiga, Marco Fanciulli, Guy Brammertz, Clement Merckling, Matty Caymax

Trimethylaluminum-based Atomic Layer Deposition of MO2 (M= Zr, Hf): Gate Dielectrics on In0. 53Ga0. 47As (001) Substrates

ECS Transactions [The Electrochemical Society], Volume: 50 Issue: 13 Pages: 11-19

A Molle, E Cianci, A Lamperti, C Wiemer, S Spiga, M Fanciulli

A Viable Route to Enhance Permittivity of Gate Dielectrics on In0. 53Ga0. 47As (001): Trimethylaluminum-Based Atomic Layer Deposition of MeO2 (Me= Zr, Hf)

ECS Journal of Solid State Science and Technology [The Electrochemical Society], Volume: 2 Issue: 9 Pages: P395-P399

M Perego, A Molle, G Seguini

Electronic properties at the oxide interface with silicon and germanium through x-ray induced oxide charging

Applied Physics Letters [AIP], Volume: 101 Issue: 21 Pages: 211606

Daniele Chiappe, Carlo Grazianetti, Grazia Tallarida, Marco Fanciulli, Alessandro Molle

Local electronic properties of corrugated silicene phases

Advanced Materials [WILEY‐VCH Verlag], Volume: 24 Issue: 37 Pages: 5088-5093

Carlo Grazianetti, Alessandro Molle, Grazia Tallarida, Sabina Spiga, Marco Fanciulli

Effect of Electric Dipoles on Fermi Level Positioning at the Interface between Ultrathin Al2O3 Films and Differently Reconstructed In0. 53Ga0. 47As (001) Surfaces

The Journal of Physical Chemistry C [American Chemical Society], Volume: 116 Issue: 35 Pages: 18746-18751

S Spiga, R Rao, L Lamagna, C Wiemer, G Congedo, A Lamperti, A Molle, M Fanciulli, F Palma, F Irrera

Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode

Journal of Applied Physics [AIP], Volume: 112 Issue: 1 Pages: 014107

Alessandro Molle, Elena Cianci, Alessio Lamperti, Claudia Wiemer, Silvia Baldovino, Luca Lamagna, Sabina Spiga, Marco Fanciulli, Guy Brammertz, Clement Merckling, Matty Caymax

Trimethylaluminum-Based Atomic Layer Deposition of Al: MO2 (M= Zr, Hf): A Viable Route to Integrate High-Permittivity Oxides on In0. 53Ga0. 47As Substrates

Meeting Abstracts [The Electrochemical Society], Issue: 28 Pages: 2457-2457

Silvia Baldovino, Alessio Lamperti, Marco Fanciulli, Alessandro Molle

Role of the Oxygen Content in the GeO2 Passivation of Ge Substrates as a Function of the Oxidizer

Journal of The Electrochemical Society [The Electrochemical Society], Volume: 159 Issue: 6 Pages: H555-H559

L Lamagna, A Molle, C Wiemer, S Spiga, C Grazianetti, G Congedo, M Fanciulli

Atomic Layer Deposition of Al-Doped ZrO2 Thin Films as Gate Dielectric for In0. 53Ga0. 47As

Journal of The Electrochemical Society [The Electrochemical Society], Volume: 159 Issue: 3 Pages: H220-H224

J Barzola-Quiquia, N Klingner, J Krüger, A Molle, P Esquinazi, A Leonhardt, MT Martinez

Quantum oscillations and ferromagnetic hysteresis observed in iron filled multiwall carbon nanotubes

Nanotechnology [IOP Publishing], Volume: 23 Issue: 1 Pages: 015707

C Wiemer, A Debernardi, A Lamperti, A Molle, O Salicio, L Lamagna, M Fanciulli

Influence of lattice parameters on the dielectric constant of tetragonal ZrO2 and La-doped ZrO2 crystals in thin films deposited by atomic layer deposition on Ge (001)

Applied Physics Letters [AIP], Volume: 99 Issue: 23 Pages: 232907

A Molle, L Lamagna, C Grazianetti, G Brammertz, C Merckling, M Caymax, S Spiga, M Fanciulli

Reconstruction dependent reactivity of As-decapped In0. 53Ga0. 47As (001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition

Applied Physics Letters [AIP], Volume: 99 Issue: 19 Pages: 193505

VV Afanas’ ev, H-Y Chou, Michel Houssa, Andre Stesmans, L Lamagna, A Lamperti, A Molle, B Vincent, G Brammertz

Transitivity of band offsets between semiconductor heterojunctions and oxide insulators

Applied Physics Letters [AIP], Volume: 99 Issue: 17 Pages: 172101

Alessandro Molle, Silvia Baldovino, Marco Fanciulli, Dimitra Tsoutsou, Evangelos Golias, Athanasios Dimoulas

Impact of post deposition annealing in the electrically active traps at the interface between Ge (001) substrates and LaGeOx films grown by molecular beam deposition

Journal of Applied Physics [AIP], Volume: 110 Issue: 8 Pages: 084504

Alessandro Molle, Silvia Baldovino, Luca Lamagna, Sabina Spiga, Alessio Lamperti, Marco Fanciulli, Dimitra Tsoutsou, Evangelos Golias, Athanasios Dimoulas, Guy Brammertz, Clement Merckling, Matty Caymax

Active Trap Determination at the Interface of Ge and In0. 53Ga0. 47 as Substrates with Dielectric Layers

ECS Transactions [The Electrochemical Society], Volume: 41 Issue: 3 Pages: 203-221

Alessandro Molle, Silvia Baldovino, Luca Lamagna, Sabina Spiga, Alessio Lamperti, Marco Fanciulli, Dimitra Tsoutsou, Evangelos Golias, Athanasios Dimoulas, Guy Brammertz, Clement Merckling, Matty Caymax

(Invited) Active Trap Determination at the Interface of Ge and In0. 53Ga0. 47 as Substrates with Dielectric Layers

ECS Transactions [The Electrochemical Society], Volume: 41 Issue: 3 Pages: 203-221

Alessandro Molle, Luca Lamagna, Claudia Wiemer, Sabina Spiga, Marco Fanciulli, Clement Merckling, Guy Brammertz, Matty Caymax

Improved Performance of In0. 53Ga0. 47As-Based Metal–Oxide–Semiconductor Capacitors with Al: ZrO2 Gate Dielectric Grown by Atomic Layer Deposition

Applied physics express [IOP Publishing], Volume: 4 Issue: 9 Pages: 094103

Alessandro Molle, Silvia Baldovino, Luca Lamagna, Sabina Spiga, Marco Fanciulli, Dimitra Tsoutsou, Evangelos Golias, Athanasios Dimoulas, Guy Brammertz, Clement Merckling, Matty Caymax

Active Trap Determination at the Interface of Ge and InxGa1-xAs Substrates with Dielectric Layers

Meeting Abstracts [The Electrochemical Society], Issue: 27 Pages: 1899-1899

C Wiemer, A Lamperti, L Lamagna, O Salicio, A Molle, M Fanciulli

Detection of the tetragonal phase in atomic layer deposited La-doped ZrO2 thin films on germanium

Journal of The Electrochemical Society [The Electrochemical Society], Volume: 158 Issue: 8 Pages: G194-G198

M Fanciulli, A Molle, S Baldovino, A Vellei

Magnetic resonance spectroscopy of defects at the dielectric-semiconductor interface: Ge substrates and Si nanowires

Microelectronic engineering [Elsevier], Volume: 88 Issue: 7 Pages: 1482-1487

A Lamperti, S Baldovino, A Molle, M Fanciulli

Chemical nature of the passivation layer depending on the oxidizing agent in Gd 2 O 3/GeO 2/Ge stacks grown by molecular beam deposition

Microelectronic Engineering [Elsevier], Volume: 88 Issue: 4 Pages: 403-406

M Fusi, L Lamagna, S Spiga, M Fanciulli, G Brammertz, C Merckling, M Meuris, A Molle

Al 2 O 3 stacks on In 0.53 Ga 0.47 As substrates: In situ investigation of the interface

Microelectronic Engineering [Elsevier], Volume: 88 Issue: 4 Pages: 435-439

L Lamagna, M Fusi, S Spiga, M Fanciulli, G Brammertz, C Merckling, M Meuris, A Molle

Effects of surface passivation during atomic layer deposition of Al 2 O 3 on In 0.53 Ga 0.47 As substrates

Microelectronic Engineering [Elsevier], Volume: 88 Issue: 4 Pages: 431-434

Luca Lamagna, Alessandro Molle, Claudia Wiemer, Sabina Spiga, Carlo Grazianetti, Marco Fanciulli

Atomic Layer Deposition of Al-Doped ZrO2 Thin Films for Advanced Gate Stack on III-V Substrates

ECS Transactions [The Electrochemical Society], Volume: 35 Issue: 3 Pages: 431-440

Claudia Wiemer, Alessio Lamperti, Luca Lamagna, Olivier Salicio, Alessandro Molle, Marco Fanciulli

Detection of the Tetragonal and Monoclinic Phases and their Role on the Dielectric Constant of Atomic Layer Deposited La-Doped ZrO2 Thin Films on Ge (001)

ECS Transactions [The Electrochemical Society], Volume: 35 Issue: 3 Pages: 481-490

Alessandro Molle, Guy Brammertz, Athanasios Dimoulas, Chiara Marchiori

Preface: Preface to Symposium H: Post-Si-CMOS electronic devices: The role of Ge and III-V materials

Microelectronic Engineering [Elsevier Science Ltd.], Volume: 88 Issue: 4 Pages: 323

S Baldovino, A Molle, M Fanciulli

Influence of the oxidation temperature on the non-trigonal Ge dangling bonds at the (100) Ge/GeO 2 interface

Microelectronic engineering [Elsevier], Volume: 88 Issue: 4 Pages: 388-390

A Lamperti, S Baldovino, A Molle, M Fanciulli

Chemical nature of the passivation layer depending on the oxidizing agent in Gd2O3/GeO2/Ge stacks grown by molecular beam deposition

Microelectronic Engineering [Elsevier], Volume: 88 Issue: 4 Pages: 403-406

M Fusi, L Lamagna, S Spiga, M Fanciulli, G Brammertz, C Merckling, M Meuris, A Molle

Al sub (2) O sub (3) stacks on In sub (0. 53) Ga sub (0. 47) As substrates: In situ investigation of the interface

Microelectronic Engineering [Elsevier BV], Volume: 88 Issue: 4 Pages: 435-439

L Lamagna, M Fusi, S Spiga, M Fanciulli, G Brammertz, C Merckling, M Meuris, A Molle

Effects of surface passivation during atomic layer deposition of Al2O3 on In0. 53Ga0. 47As substrates

Microelectronic Engineering [Elsevier], Volume: 88 Issue: 4 Pages: 431-434

M Fusi, L Lamagna, S Spiga, M Fanciulli, G Brammertz, C Merckling, M Meuris, A Molle

Al2O3 stacks on In0. 53Ga0. 47As substrates: In situ investigation of the interface

Microelectronic Engineering [Elsevier], Volume: 88 Issue: 4 Pages: 435-439

Silvia Baldovino, Alessandro Molle, Marco Fanciulli

Influence of the oxidizing species on the Ge dangling bonds at the (100) Ge/GeO 2 interface

Applied physics letters [AIP], Volume: 96 Issue: 22 Pages: 222110

Alessandro Molle, Silvia Baldovino, Sabina Spiga, Marco Fanciulli

High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors

Thin solid films [Elsevier], Volume: 518 Issue: 6 Pages: S96-S103

Alessandro Molle, Luca Lamagna, Sabina Spiga, Marco Fanciulli, Guy Brammertz, Marc Meuris

Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks

Thin Solid Films [Elsevier], Volume: 518 Issue: 6 Pages: S123-S127

L Lamagna, C Wiemer, S Baldovino, A Molle, M Perego, Sylvie Schamm-Chardon, Pierre-Eugène Coulon, M Fanciulli

Thermally induced permittivity enhancement in La-doped ZrO 2 grown by atomic layer deposition on Ge (100)

Applied Physics Letters [AIP], Volume: 95 Issue: 12 Pages: 122902

Alessandro Molle, Guy Brammertz, Luca Lamagna, Marco Fanciulli, Marc Meuris, Sabina Spiga

Ge-based interface passivation for atomic layer deposited La-doped ZrO 2 on III-V compound (GaAs, In 0.15 Ga 0.85 As) substrates

Applied Physics Letters [AIP], Volume: 95 Issue: 2 Pages: 023507

D Tsoutsou, L Lamagna, SN Volkos, A Molle, S Baldovino, S Schamm, Pierre-Eugène Coulon, M Fanciulli

Atomic layer deposition of La x Zr 1− x O 2− δ (x= 0.25) high-k dielectrics for advanced gate stacks

Applied Physics Letters [AIP], Volume: 94 Issue: 5 Pages: 053504

Alessandro Molle, Guy Brammertz, Luca Lamagna, Sabina Spiga, Marc Meuris, Marco Fanciulli

Interface quality of atomic layer deposited La-doped ZrO2 films on Ge-passivated In 0.15 Ga 0.85 As substrates

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 1194

Silvia Baldovino, Alessandro Molle, Marco Fanciulli

Evidence of dangling bond electrical activity at the Ge/oxide interface

Applied Physics Letters [AIP], Volume: 93 Issue: 24 Pages: 242105

M Longo, O Salicio, C Wiemer, R Fallica, A Molle, M Fanciulli, C Giesen, B Seitzinger, PK Baumann, M Heuken, S Rushworth

Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications

Journal of Crystal Growth [North-Holland], Volume: 310 Issue: 23 Pages: 5053-5057

A Molle, S Spiga, Md NK Bhuiyan, G Tallarida, M Perego, C Wiemer, Marco Fanciulli

Atomic oxygen-assisted molecular beam deposition of Gd 2 O 3 films for ultra-scaled Ge-based electronic devices

Materials Science in Semiconductor Processing [Pergamon], Volume: 11 Issue: 5 Pages: 236-240

A Molle, S Spiga, Md NK Bhuiyan, G Tallarida, M Perego, C Wiemer, Marco Fanciulli

Atomic oxygen-assisted molecular beam deposition of Gd2O3 films for ultra-scaled Ge-based electronic devices

Materials Science in Semiconductor Processing [Pergamon], Volume: 11 Issue: 5-6 Pages: 236-240

Alessandro Molle, Sabina Spiga, Andrea Andreozzi, Marco Fanciulli, Guy Brammertz, Marc Meuris

Structure and interface bonding of Ge O 2∕ Ge∕ In 0.15 Ga 0.85 As heterostructures

Applied Physics Letters [AIP], Volume: 93 Issue: 13 Pages: 133504

M Perego, A Molle, M Fanciulli

Effect of oxygen on the electronic configuration of Gd 2 O 3∕ Ge heterojunctions

Applied Physics Letters [AIP], Volume: 92 Issue: 4 Pages: 042106

Alessandro Molle, Claudia Wiemer, MDNK Bhuiyan, Grazia Tallarida, Marco Fanciulli

Epitaxial growth of cubic Gd2O3 thin films on Ge substrates

Journal of Physics: Conference Series [IOP Publishing], Volume: 100 Issue: 4 Pages: 042048

Alessandro Molle, Michele Perego, Md Nurul Kabir Bhuiyan, Claudia Wiemer, Grazia Tallarida, Marco Fanciulli

The interface between Gd 2 O 3 films and Ge (001): A comparative study between molecular and atomic oxygen mediated growths

Journal of Applied Physics [AIP], Volume: 102 Issue: 3 Pages: 034513

F Buatier de Mongeot, A Toma, A Molle, S Lizzit, L Petaccia, Alessandro Baraldi

Self-organised synthesis of Rh nanostructures with tunable chemical reactivity

Nanoscale research letters [], Volume: 2 Issue: 6 Pages: 251

Alessandro Molle, Claudia Wiemer, Md Nurul Kabir Bhuiyan, Grazia Tallarida, Marco Fanciulli, Giuseppe Pavia

Cubic-to-monoclinic phase transition during the epitaxial growth of crystalline Gd 2 O 3 films on Ge (001) substrates

Applied physics letters [AIP], Volume: 90 Issue: 19 Pages: 193511

FB De Mongeot, A Molle, A Toma, C Boragno, U Valbusa

Nanostructuring Rh (110) Surfaces by Ion Etching

MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS [Warrendale, Pa.; Materials Research Society; 1999], Volume: 960 Pages: 48

Alessandro Molle, Md Nurul Kabir Bhuiyan, Grazia Tallarida, Marco Fanciulli

In situ chemical and structural investigations of the oxidation of Ge (001) substrates by atomic oxygen

Applied physics letters [AIP], Volume: 89 Issue: 8 Pages: 083504

F Buatier de Mongeot, A Toma, A Molle, S Lizzit, L Petaccia, Alessandro Baraldi

Carbon monoxide dissociation on Rh nanopyramids

Physical review letters [American Physical Society], Volume: 97 Issue: 5 Pages: 056103

Alessandro Molle, Md Nurul Kabir Bhuiyan, Grazia Tallarida, Marco Fanciulli

Formation and stability of germanium oxide induced by atomic oxygen exposure

Materials science in semiconductor processing [Pergamon], Volume: 9 Issue: 4-5 Pages: 673-678

Alessandro Molle, Francesco Buatier de Mongeot, Anna Molinari, Corrado Boragno, Ugo Valbusa

Interfacial dynamics of the rhomboidal pyramid pattern on ion-eroded Cu (110)

Physical Review B [American Physical Society], Volume: 73 Issue: 15 Pages: 155418

Alessandro Molle, Claudia Wiemer, Md Bhuiyan

Nurul Kabir, Tallarida, Grazia, and Fanciulli, Marco

Appl. Phys. Lett. v90 [], Volume: 193511

Alessandro Molle, Andrea Toma, Corrado Boragno, Ugo Valbusa, Francesco Buatier de Mongeot

Nanostructuring Rh (110) Surfaces by Ion Etching

MRS Online Proceedings Library Archive [Cambridge University Press], Volume: 960

Alessandro Molle, F Buatier de Mongeot, C Boragno, R Moroni, F Granone, D Sekiba, R Buzio, U Valbusa, R Felici, C Quiros

Dense arrays of Co nanocrystals epitaxially grown on ion-patterned Cu (110) substrates

Applied Physics Letters [AIP], Volume: 86 Issue: 14 Pages: 141906

Alessandro Molle, F Buatier de Mongeot, F Granone, R Buzio, G Firpo, C Boragno, U Valbusa

Temperature dependence of rippled corrugations induced on the Rh (110) surface via ion sputtering

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 230 Issue: 1-4 Pages: 555-559

Andrea Camellini, Eugenio Cinquanta, Christian Martella, Carlo Mennucci, Alessio Lamperti, Giulio Cerullo, Giuseppe Della Valle, Alessandro Molle, Francesco Buatier de Mongeot, Margherita Zavelani-Rossi

Optical characterization of anisotropic MoS 2 nanosheets

2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) [IEEE], Pages: 1-1

Eugenio Cinquanta, Guido Fratesi, Stefano dal Conte, Carlo Grazianetti, Francesco Scotognella, Salvatore Stagira, Caterina Vozzi, Giovanni Onida, Alessandro Molle

Ultrafast carrier dynamics of epitaxial silicene

Ultrafast Phenomena and Nanophotonics XXI [International Society for Optics and Photonics], Volume: 10102 Pages: 101020J

Eugenio Cinquanta, Andrea Camellini, Christian Martella, Carlo Mennucci, Alessio Lamperti, Giuseppe Della Valle, Margherita Zavelani Rossi, Francesco Buatier de Mongeot, Alessandro Molle, Salvatore Stagira

Anisotropic ultrafast response of MoS2 on rippled substrates

APS Meeting Abstracts [],

G Fratesi, E Cinquanta, S Dal Conte, C Grazianetti, F Scotognella, S Stagira, C Vozzi, A Molle, G Onida

Optical response and ultrafast carrier dynamics of silicene on silver

International Meeting on Silicene [],

G Fratesi, E Cinquanta, S dal Conte, C Grazianetti, F Scotognella, S Stagira, C Vozzi, A Molle, G Onida

Optical response and ultrafast carrier dynamics of silicene on silver

International Meeting on Silicene [],

Alessandro Molle, Davide Rotta, Stefano Paleari, Eugenio Cinquanta, Marco Fanciulli

Admittance spectroscopy of interface traps in MoS2 nanosheet capacitors

APS March Meeting Abstracts [],

Li Tao, Eugenio Cinquanta, Carlo Grazianetti, Alessandro Molle, Deji Akinwande

Single/Bi-layer Silicene Field-Effect Transistors and their Air-Stability

APS March Meeting Abstracts [],

S Paleari, A Molle, A Lamperti, M Fanciulli

Negative-U trapping centers evidenced by admittance spectroscopy at the Ge/GeO2 interface

E-MRS spring meeting [],

S Vangelista, E Cinquanta, C Martella, M Longo, A Lamperti, R Mantovan, M Alia, F BASSO BASSET, F Pezzoli, A Molle

The Role of Deposition Temperature and Substrate for Scalable and Uniform Deposition of MoS2 Grown by Vapour-Solid Chemical Reaction

GraphITA 2015 [],

Eugenio Cinquanta, Francesco Scotognella, Daniele Chiappe, Carlo Grazianetti, Emilio Scalise, Michel Houssa, Marco Fanciulli, Caterina Vozzi, Alessandro Molle

Optical investigation of epitaxial silicene on Ag (111)

APS Meeting Abstracts [],

Alessandro Molle

InGaAs Channels

224th ECS Meeting (October 27 ñ November 1, 2013) [Ecs],

Eugenio Cinquanta, Emilio Scalise, Daniele Chiappe, Carlo Grazianetti, Bas van den Broek, Michel Houssa, Marco Fanciulli, Alessandro Molle

Raman spectrum of epitaxial silicene

2013 MRS Spring Meeting, Date: 2013/04/01-2013/04/05, Location: San Francisco [Materials Research Society],

Marco Fanciulli, Silvia Baldovino, Alessandro Molle

Inspecting the microstructure of electrically active defects at the Ge/GeOx interface

APS March Meeting Abstracts [],

Li Tao, Eugenio Cinquanta, Carlo Grazianetti, Alessandro Molle, Deji Akinwande

Encapsulated Silicene Field-Effect Transistors

Silicene [Springer, Cham], Pages: 235-254

C Grazianetti, A Molle

Silicene in the Flatland

GraphITA [Springer, Cham], Pages: 137-152

Alessandro Molle, Dimitra Tsoutsou, Athanasios Dimoulas

Group IV Semiconductor 2D Materials

2D Materials for Nanoelectronics [CRC Press], Volume: 17 Pages: 349

Michel Houssa, Athanasios Dimoulas, Alessandro Molle

2D Materials for Nanoelectronics

[CRC Press], Pages: 1-467

E Cinquanta, SD Conte, D Chiappe, C Grazianetti, M Fanciulli, A Molle, G Cerullo, Salvatore Stagira, Francesco Scotognella, C Vozzi

Ultrafast dynamics in epitaxial silicene on Ag (111)

Ultrafast Phenomena XIX [Springer, Cham], Pages: 329-332