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The thermal conductivity of Ge2Sb2Te5 (GST) layers, as well as the thermal boundary resistance at the interface between the GST and amorphous SiO2, was measured using a photothermal radiometry experiment. The two phase changes in the Ge2Sb2Te5 were retrieved, starting from the amorphous and sweeping to the face centered cubic (fcc) crystalline state at 130°C and then to the hexagonal crystalline phase (hcp) at 310°C. The thermal conductivity resulted to be constant in the amorphous phase, whereas it evolved between the two crystalline states. The thermal boundary resistance at the GST-SiO2 interface was estimated to be higher for the hcp phase than for the amorphous and fcc ones.
American Institute of Physics
Publication date: 
15 Feb 2010

J-L Battaglia, Andrzej Kusiak, Vincent Schick, Andrea Cappella, Claudia Wiemer, Massimo Longo, Enrico Varesi

Biblio References: 
Volume: 107 Issue: 4 Pages: 044314
Journal of Applied Physics