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Surname: 
Alia
Firstname: 
Mario
Position: 
Staff
Profile: 
Technical Staff
Phone: 
039/6037324
Curriculum: 

Mario Alia is a technician of process at the CNR IMM MDM Laboratory since February 2002. His main interests are: photolithography, process developing, maintenance of the various equipments and following the inherent parts to layout and lacing. His previous experiences are: s Near Corning OTI Engineer of process with projects responsibility to improve production profitability and costs, to manage problem list of layout and acquisition of clean room equipment (2000-2001) s Near Pirelli Optical Systems as responsible of the pilot line in the team of laser chip engineering (1999-2000) and responsible of the Front End area: from the wafer with epitaxial structure to the chip realization (1996-1998). He got the certification ISO 9002 for the manufacturing area of his responsibility. Near Pirelli Cable and Systems as responsible of a part of the IBM technological transfer about the “980 nm Pump Laser chip” process (1994-1995).

Curriculum (PDF): 
PDF icon Mario Alia CV.pdf

Scientific Production

Sara Ghomi, Alessio Lamperti, Mario Alia, Carlo Spartaco Casari, Carlo Grazianetti, Alessandro Molle, Christian Martella

Large Area Growth of Silver and Gold Telluride Ultrathin Films via Chemical Vapor Tellurization

Inorganics [MDPI], Volume: 12 Issue: 1 Pages: 33

Emanuele Longo, Lorenzo Locatelli, Matteo Belli, Mario Alia, Arun Kumar, Massimo Longo, Marco Fanciulli, Roberto Mantovan

Spin-Charge Conversion in Fe/Au/Sb2Te3 Heterostructures as Probed By Spin Pumping Ferromagnetic Resonance

Advanced Materials Interfaces [], Volume: 8 Issue: 23 Pages: 2101244

R. Mantovan E. Longo, M. Belli, M. Alia, M. Rimoldi, R. Cecchini, M. Longo, C. Wiemer, L. Locatelli, P. Tsipas, A. Dimoulas, G. Gubbiotti, M. Fanciulli

Large spin-to-charge conversion at room temperature in extended epitaxial Sb2Te3 topological insulator chemically grown on Silicon

Advanced Functional Materials [Wiley-VCH], Pages: 2109361

Pinakapani Tummala, Alessio Lamperti, Mario Alia, Erika Kozma, Luca Giampaolo Nobili, Alessandro Molle

Application-Oriented Growth of a Molybdenum Disulfide (MoS2) Single Layer by Means of Parametrically Optimized Chemical Vapor Deposition

Materials [Multidisciplinary Digital Publishing Institute], Volume: 13 Issue: 12 Pages: 2786

Christian Martella, Pierpaolo Melloni, Eugenio Cinquanta, Elena Cianci, Mario Alia, Massimo Longo, Alessio Lamperti, Silvia Vangelista, Marco Fanciulli, Alessandro Molle

Engineering the Growth of MoS2 via Atomic Layer Deposition of Molybdenum Oxide Film Precursor

Advanced Electronic Materials [], Volume: 2 Issue: 10 Pages: 1600330

Silvia Vangelista, Eugenio Cinquanta, Christian Martella, Mario Alia, Massimo Longo, Alessio Lamperti, Roberto Mantovan, Francesco Basso Basset, Fabio Pezzoli, Alessandro Molle

Towards a uniform and large-scale deposition of MoS2 nanosheets via sulfurization of ultra-thin Mo-based solid films

Nanotechnology [IOP Publishing], Volume: 27 Issue: 17 Pages: 175703

C. Canevali, M. Alia, M. Fanciulli, M. Longo, R. Ruffo, C. Mari

Influence of doping elements on the formation rate of silicon nanowires by silver-assisted chemical etching

Surface & Coatings Technology [Elsevier], Volume: 280 Pages: 37–42

Michele Perego, Gabriele Seguini, Elisa Arduca, Jacopo Frascaroli, Davide De Salvador, Massimo Mastromatteo, Alberto Carnera, Giuseppe Nicotra, Mario Scuderi, Corrado Spinella, Giuliana Impellizzeri, Cristina Lenardi, Enrico Napolitani

Thermodynamic stability of high phosphorus concentration in silicon nanostructures

Nanoscale [Royal Society of Chemistry], Volume: 7 Issue: 34 Pages: 14469-14475

A Lamperti, S Spiga, HL Lu, C Wiemer, M Perego, E Cianci, M Alia, M Fanciulli

Study of the interfaces in resistive switching NiO thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN)

Microelectronic Engineering [Elsevier], Volume: 85 Issue: 12 Pages: 2425-2429

N Huby, G Tallarida, M Kutrzeba, S Ferrari, E Guziewicz, M Godlewski

New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices

Microelectronic Engineering [Elsevier], Volume: 85 Issue: 12 Pages: 2442-2444

S Spiga, A Lamperti, C Wiemer, M Perego, E Cianci, G Tallarida, HL Lu, M Alia, FG Volpe, M Fanciulli

Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition

Microelectronic Engineering [Elsevier], Volume: 85 Issue: 12 Pages: 2414-2419

HL Lu, G Scarel, M Alia, M Fanciulli, Shi-Jin Ding, David Wei Zhang

Spectroscopic ellipsometry study of thin NiO films grown on Si (100) by atomic layer deposition

Applied Physics Letters [American Institute of Physics], Volume: 92 Issue: 22 Pages: 222907

Enrico Prati, Marco Fanciulli, Alessandro Calderoni, Giorgio Ferrari, Marco Sampietro

Microwave irradiation effects on random telegraph signal in a MOSFET

Physics Letters A [North-Holland], Volume: 370 Issue: 5-6 Pages: 491-493

Italy G. Scarel,a A. Debernardi, D. Tsoutsou, S. Spiga, S. C. Capelli, L. Lamagna, S. N. Volkos, M. Alia, and M. Fanciulli MDM National Laboratory, CNR-INFM, Agrate Brianza, Milan 20041

Vibrational and electrical properties of hexagonal La 2 O 3 films

APPLIED PHYSICS LETTERS [American Institute of Physics], Volume: 91 Issue: 102901

S Vangelista, E Cinquanta, C Martella, M Longo, A Lamperti, R Mantovan, M Alia, F BASSO BASSET, F PEZZOLI, A Molle

The Role of Deposition Temperature and Substrate for Scalable and Uniform Deposition of MoS2 Grown by Vapour-Solid Chemical Reaction

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