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Resource & Service

Advanced materials growth and process

  • Two atomic layer deposition (ALD) systems with O3 line (4” and 8” wafers) 
  • Metallorganic chemical vapor deposition (MOCVD)
  • Multiprobe Molecular Beam Epitaxy growth facility with in situ XPS/AFM/STM/LEIS/RHEED
  • Combined ALD/CVD growth facility for oxides and ferromagnetic films
  • Electron-beam lithography (RAITH system on SEM ZEISS SUPRA 40)
  • Photo-lithography
  • Rapid Thermal Processing (RTP) and furnace annealing systems
  • Thermal and e-beam evaporators
  • RF and DC Sputtering
  • Wet bench for wafers cleaning

Characterization facilities

  • Scanning probe microscopy (SPM)
  • X-ray diffraction (XRD) and reflectivity (XRR)
  • Total reflection X-ray fluorescence (TXRF)
  • X-ray photoelectron spectroscopy (XPS)
  • Scanning Electron Microscopy (SEM)
  • Electrical Characterization (0.3-500K): I-V, C-V, pulsed set up, DLTS, Noise, IPE, IETS, Hall effect
  • micro-Raman with excitation in the visible (488 nm, 633 nm) and UV (347 nm)
  • Spectroscopic Ellipsometry
  • Fourier-transform Infrared Spectroscopy (FTIR) (middle- and far-IR)
  • Electron Spin Resonance Spectroscopy 
  • (119Sn, 57Fe) Conversion Electron Mössbauer Spectroscopy (CEMS)
  • 12T Superconducting Cryomagnet 270mK Cryostat
  • Computational Facilities