Resource & Service

Advanced materials growth and process

• Two atomic layer deposition (ALD) systems with O3 line (4” and 8” wafers) 
• Metallorganic chemical vapor deposition (MOCVD)
• Multiprobe Molecular Beam Epitaxy growth facility with in situ XPS/AFM/STM/LEIS/RHEED
• Combined ALD/CVD growth facility for oxides and ferromagnetic films
• Electron-beam lithography (RAITH system on SEM ZEISS SUPRA 40)
• Photo-lithography
• Rapid Thermal Processing (RTP) and furnace annealing systems
• Thermal and e-beam evaporators
• RF and DC Sputtering
• Wet bench for wafers cleaning

Characterization facilities

• Scanning probe microscopy (SPM)
• X-ray diffraction (XRD) and reflectivity (XRR)
• Total reflection X-ray fluorescence (TXRF)
• X-ray photoelectron spectroscopy (XPS)
• Scanning Electron Microscopy (SEM)
• Electrical Characterization (0.3-500K): I-V, C-V, pulsed set up, DLTS, Noise, IPE, IETS, Hall effect
• micro-Raman with excitation in the visible (488 nm, 633 nm) and UV (347 nm)
• Spectroscopic Ellipsometry
• Fourier-transform Infrared Spectroscopy (FTIR) (middle- and far-IR)
• Electron Spin Resonance Spectroscopy 
• (119Sn, 57Fe) Conversion Electron Mössbauer Spectroscopy (CEMS)
• 12T Superconducting Cryomagnet 270mK Cryostat
• Computational Facilities