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Simulation of low-dimensional devices for ultimate nanoelectronics and quantum computation. In particular, studies on the changes of the energy band structure of silicon under strong quantum confinement with applied electric and magnetic fields and with donors by using Constant Interaction models and Density Functional Theory -like programs and k*p methods. Simulations of multi-electron states in silicon quantum dot systems to be exploited as qubit states and developement of search algorithms to find sequences for logical quantum gates.
Scientific Production
Flip-flop Qubits for Scalable Quantum Computing Architectures
Bulletin of the American Physical Society [American Physical Society],
Parallel Gate Operations Fidelity in a Linear Array of Flip-Flop Qubits
arXiv preprint arXiv:2110.12982 [],
Universal set of quantum gates for the flip-flop qubit in the presence of 1/f noise
arXiv preprint arXiv:2104.14341 [],
Scientific Reports [Nature Publishing Group], Volume: 10 Issue: 1 Pages: 1-10
Bandwidth-limited and noisy pulse sequences for single qubit operations in semiconductor spin qubits
Entropy [Multidisciplinary Digital Publishing Institute], Volume: 21 Issue: 11 Pages: 1042
Phonon-induced relaxation and decoherence times of the hybrid qubit in silicon quantum dots
Physical Review B [APS], Volume: 100 Pages: 035310
Coherence time analysis in semiconducting hybrid qubit under realistic experimental conditions
Advanced Quantum Technologies [], Volume: 1 Issue: 3 Pages: 1800040
Semiconducting double-dot exchange-only qubit dynamics in presence of magnetic and charge noises
Quantum Information Processing [Springer US], Volume: 17 Issue: 6 Pages: 130
Coherence Time of a Semiconductor Hybrid Qubit in Presence of Environmental Noises
APS March Meeting Abstracts [], Volume: 2018 Pages: H28. 009
Gate fidelity comparison in semiconducting spin qubit implementations affected by control noises
Journal of Physics Communications [IOP], Volume: 2 Pages: 115022
Semiconducting double-dot exchange-only qubit dynamics in the presence of magnetic and charge noises
Quantum Information Processing [Springer US], Volume: 17 Issue: 6 Pages: 130
Controlled-NOT gate sequences for mixed spin qubit architectures in a noisy environment
Quantum Information Processing [Springer US], Volume: 16 Issue: 11 Pages: 1-21
Controlled-NOT gate sequences for mixed spin qubit architectures in a noisy environment
Quantum Information Processing [Springer US], Volume: 16 Issue: 11 Pages: 277
CNOT sequences for heterogeneous spin qubit architectures in a noisy environment
APS March Meeting Abstracts [], Volume: 2017 Pages: C42. 004
Modular Printed Circuit Boards for Broadband Characterization of Nanoelectronic Quantum Devices
IEEE Transactions on Instrumentation and Measurement [IEEE], Volume: 65 Issue: 8 Pages: 1827-1835
Quantum Information Processing Topical Collection [],
Physics Letters A [North-Holland], Volume: 380 Issue: 11-12 Pages: 1205-1209
Valley blockade and multielectron spin-valley Kondo effect in silicon
Physical Review B [American Physical Society], Volume: 92 Issue: 3 Pages: 035424
Coherent tunneling by adiabatic passage of an exchange-only spin qubit in a double quantum dot chain
Physical Review B [American Physical Society], Volume: 91 Issue: 7 Pages: 075435
Universal set of quantum gates for double-dot exchange-only spin qubits with intradot coupling
Journal of Physics A: Mathematical and Theoretical [IOP Publishing], Volume: 48 Issue: 6 Pages: 065304
Quantum Information Processing [Springer US], Volume: 14 Issue: 1 Pages: 47-65
Effective Hamiltonian for the hybrid double quantum dot qubit
Quantum information processing [Springer US], Volume: 13 Issue: 5 Pages: 1155-1173
Universal Set of Quantum Gates for Double-Dot Exchange-Only Spin Qubits Under Realistic Conditions
APS March Meeting Abstracts [], Volume: 2014 Pages: J36. 010
Applied Physics Express [IOP Publishing], Volume: 5 Issue: 12 Pages: 124001
Journal of Applied Physics [American Institute of Physics], Volume: 112 Issue: 3 Pages: 034502
Few electron limit of n-type metal oxide semiconductor single electron transistors
Nanotechnology [IOP Publishing], Volume: 23 Issue: 21 Pages: 215204
On the surface-roughness scattering in biaxially strained n-and p-MOS transistors
IEEE transactions on electron devices [IEEE], Volume: 58 Issue: 9 Pages: 3219-3223
IEEE transactions on electron devices [IEEE], Volume: 58 Issue: 6 Pages: 1583-1593
IEEE Transactions on Electron Devices [], Volume: 58 Issue: 6 Pages: 1583
Journal of computational electronics [Springer US], Volume: 8 Issue: 3-4 Pages: 209
IEEE transactions on electron devices [IEEE], Volume: 56 Issue: 9 Pages: 2081-2091
Drain current improvements in uniaxially strained p-MOSFETs: A multi-subband Monte Carlo study
Solid-state electronics [Pergamon], Volume: 53 Issue: 7 Pages: 706-711
IEEE transactions on electron devices [IEEE], Volume: 54 Issue: 9 Pages: 2164-2173
A new analytical model for the energy dispersion in two-dimensional hole inversion layers
Solid-State Electronics [Pergamon], Volume: 51 Issue: 4 Pages: 598-603
IEEE Transactions on Electron Devices [], Volume: 54 Issue: 1 Pages: 115-123
IEEE Transactions on Electron Devices [IEEE], Volume: 54 Issue: 1 Pages: 115-123
IEEE Transactions on Electron Devices [IEEE], Volume: 54 Issue: 1 Pages: 115-123
Spin blockade in a triple silicon quantum dot in CMOS technology
APS Meeting Abstracts [], Volume: 1 Pages: 14010
2010 14th International Workshop on Computational Electronics [IEEE], Pages: 1-4
Understanding the mobility reduction in MOSFETs featuring high-κ dielectrics
Proc. Int. Conf. ULIS [], Pages: 65-68
Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs
2009 IEEE International Electron Devices Meeting (IEDM) [IEEE], Pages: 1-4
A new multi subband Monte Carlo simulator for nano p-MOSFETs
2008 9th International Conference on Ultimate Integration of Silicon [IEEE], Pages: 67-70
Trade-off between electron velocity and density of states in ballistic nano-MOSFETs
Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. [IEEE], Pages: 165-168