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Surname: 
De Michielis
Firstname: 
Marco
Position: 
Staff
Profile: 
Researcher
Phone: 
039/6035058
Activity: 

Simulation of low-dimensional devices for ultimate nanoelectronics and quantum computation. In particular, studies on the changes of the energy band structure of silicon under strong quantum confinement with applied electric and magnetic fields and with donors by using Constant Interaction models and Density Functional Theory -like programs and k*p methods. Simulations of multi-electron states in silicon quantum dot systems to be exploited as qubit states and developement of search algorithms to find sequences for logical quantum gates.

Curriculum (PDF): 
PDF icon cv_De_Michielis_Marco.pdf

Scientific Production

Elena Ferraro, Marco De Michielis

Bandwidth-limited and noisy pulse sequences for single qubit operations in semiconductor spin qubits

Entropy [Multidisciplinary Digital Publishing Institute], Volume: 21 Issue: 11 Pages: 1042

E Ferraro, M Fanciulli, M De Michielis

Phonon-induced relaxation and decoherence times of the hybrid qubit in silicon quantum dots

Physical Review B [American Physical Society], Volume: 100 Issue: 3 Pages: 035310

Elena Ferraro, Marco Fanciulli, Marco De Michielis

Coherence time analysis in semiconducting hybrid qubit under realistic experimental conditions

Advanced Quantum Technologies [], Volume: 1 Issue: 3 Pages: 1800040

E Ferraro, M Fanciulli, M De Michielis

Gate fidelity comparison in semiconducting spin qubit implementations affected by control noises

Journal of Physics Communications [IOP Publishing], Volume: 2 Issue: 11 Pages: 115022

Elena Ferraro, Marco Fanciulli, Marco De Michielis

Semiconducting double-dot exchange-only qubit dynamics in the presence of magnetic and charge noises

Quantum Information Processing [Springer US], Volume: 17 Issue: 6 Pages: 130

E Ferraro, M Fanciulli, M De Michielis

Semiconducting double-dot exchange-only qubit dynamics in presence of magnetic and charge noises

Quantum Information Processing [Springer US], Volume: 17 Issue: 6 Pages: 130

Marco De Michielis, Elena Ferraro, Marco Fanciulli

Coherence Time of a Semiconductor Hybrid Qubit in Presence of Environmental Noises

Bulletin of the American Physical Society [American Physical Society], Volume: 63

Elena Ferraro, Marco Fanciulli, Marco De Michielis

Controlled-NOT gate sequences for mixed spin qubit architectures in a noisy environment

Quantum Information Processing [Springer US], Volume: 16 Issue: 11 Pages: 277

E Ferraro, M Fanciulli, M De Michielis

Controlled-NOT gate sequences for mixed spin qubit architectures in a noisy environment

Quantum Information Processing [Springer US], Volume: 16 Issue: 11 Pages: 277

Elena Ferraro, Marco Fanciulli, Marco De Michielis

CNOT sequences for heterogeneous spin qubit architectures in a noisy environment

Bulletin of the American Physical Society [American Physical Society], Volume: 62

Davide Rotta, Marco De Michielis, Elena Ferraro, Marco Fanciulli, Enrico Prati

Maximum density of quantum information in a scalable CMOS implementation of the hybrid qubit architecture

Quantum Information Processing [Springer US], Volume: 15 Issue: 6 Pages: 2253-2274

MLV Tagliaferri, A Crippa, M De Michielis, G Mazzeo, M Fanciulli, E Prati

A compact T-shaped nanodevice for charge sensing of a tunable double quantum dot in scalable silicon technology

Physics Letters A [North-Holland], Volume: 380 Issue: 11-12 Pages: 1205-1209

A Crippa, MLV Tagliaferri, D Rotta, M De Michielis, G Mazzeo, M Fanciulli, R Wacquez, M Vinet, E Prati

Valley blockade and multielectron spin-valley Kondo effect in silicon

Physical Review B [American Physical Society], Volume: 92 Issue: 3 Pages: 035424

E Ferraro, M De Michielis, M Fanciulli, E Prati

Coherent tunneling by adiabatic passage of an exchange-only spin qubit in a double quantum dot chain

Physical Review B [American Physical Society], Volume: 91 Issue: 7 Pages: 075435

Marco De Michielis, Elena Ferraro, Marco Fanciulli, Enrico Prati

Universal set of quantum gates for double-dot exchange-only spin qubits with intradot coupling

Journal of Physics A: Mathematical and Theoretical [IOP Publishing], Volume: 48 Issue: 6 Pages: 065304

Elena Ferraro, Marco De Michielis, Marco Fanciulli, Enrico Prati

Effective Hamiltonian for two interacting double-dot exchange-only qubits and their controlled-NOT operations

Quantum Information Processing [Springer US], Volume: 14 Issue: 1 Pages: 47-65

Elena Ferraro, Marco De Michielis, G Mazzeo, Marco Fanciulli, Enrico Prati

Effective Hamiltonian for the hybrid double quantum dot qubit

Quantum information processing [Springer US], Volume: 13 Issue: 5 Pages: 1155-1173

Marco De Michielis, Enrico Prati, Marco Fanciulli, Gianluca Fiori, Giuseppe Iannaccone

Geometrical effects on valley-orbital filling patterns in silicon quantum dots for robust qubit implementation

Applied Physics Express [IOP Publishing], Volume: 5 Issue: 12 Pages: 124001

Paolo Toniutti, Pierpaolo Palestri, David Esseni, Francesco Driussi, Marco De Michielis, Luca Selmi

On the origin of the mobility reduction in n-and p-metal–oxide–semiconductor field effect transistors with hafnium-based/metal gate stacks

Journal of Applied Physics [American Institute of Physics], Volume: 112 Issue: 3 Pages: 034502

Enrico Prati, Marco De Michielis, Matteo Belli, Simone Cocco, Marco Fanciulli, Dharmraj Kotekar-Patil, Matthias Ruoff, Dieter P Kern, David A Wharam, Jan Verduijn, Giuseppe C Tettamanzi, Sven Rogge, Benoit Roche, Romain Wacquez, Xavier Jehl, Maud Vinet, Marc Sanquer

Few electron limit of n-type metal oxide semiconductor single electron transistors

Nanotechnology [IOP Publishing], Volume: 23 Issue: 21 Pages: 215204

E Prati, G Petretto, M Belli, G Mazzeo, S Cocco, M De Michielis, M Fanciulli, F Guagliardo, M Vinet, R Wacquez

Spin blockade in a triple silicon quantum dot in CMOS technology

Bulletin of the American Physical Society [American Physical Society], Volume: 57

Marco De Michielis, Francesco Conzatti, David Esseni, Luca Selmi

On the surface-roughness scattering in biaxially strained n-and p-MOS transistors

IEEE transactions on electron devices [IEEE], Volume: 58 Issue: 9 Pages: 3219-3223

Francesco Conzatti, Nicola Serra, David Esseni, Marco De Michielis, Alan Paussa, Pierpaolo Palestri, Luca Selmi, Stephen M Thomas, Terence E Whall, David Leadley, EHC Parker, Liesbeth Witters, Martin J Hytch, Etienne Snoeck, TJ Wang, WC Lee, Gerben Doornbos, Georgios Vellianitis, Mark JH van Dal, RJP Lander

Investigation of strain engineering in FinFETs comprising experimental analysis and numerical simulations

IEEE transactions on electron devices [IEEE], Volume: 58 Issue: 6 Pages: 1583-1593

F Conzatti, N Serra, D Esseni, M De Michielis, A Paussa, P Palestri, L Selmi, SM Thomas, TE Whall, D Leadley, EHC Parker, L Witters, MJ Hÿtch, E Snoeck, TJ Wang, WC Lee, G Doornbos, G Vellianitis, MJH van Dal, RJP Lander

Silicon and Column IV Semiconductor Devices-Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations

IEEE Transactions on Electron Devices [], Volume: 58 Issue: 6 Pages: 1583

David Esseni, F Conzatti, M De Michielis, N Serra, Pierpaolo Palestri, Luca Selmi

Semi-classical transport modelling of CMOS transistors with arbitrary crystal orientations and strain engineering

Journal of computational electronics [Springer US], Volume: 8 Issue: 3-4 Pages: 209

Marco De Michielis, David Esseni, Pierpaolo Palestri, Luca Selmi

Semiclassical modeling of quasi-ballistic hole transport in nanoscale pmosfets based on a multi-subband Monte Carlo approach

IEEE transactions on electron devices [IEEE], Volume: 56 Issue: 9 Pages: 2081-2091

F Conzatti, M De Michielis, D Esseni, P Palestri

Drain current improvements in uniaxially strained p-MOSFETs: A multi-subband Monte Carlo study

Solid-state electronics [Pergamon], Volume: 53 Issue: 7 Pages: 706-711

Marco De Michielis, David Esseni, YL Tsang, Pierpaolo Palestri, Luca Selmi, Anthony G O'Neill, Sanatan Chattopadhyay

A semianalytical description of the hole band structure in inversion layers for the physically based modeling of pMOS transistors

IEEE transactions on electron devices [IEEE], Volume: 54 Issue: 9 Pages: 2164-2173

Marco De Michielis, David Esseni, Pierpaolo Palestri, Luca Selmi

A new analytical model for the energy dispersion in two-dimensional hole inversion layers

Solid-State Electronics [Pergamon], Volume: 51 Issue: 4 Pages: 598-603

Marco De Michielis, David Esseni, Francesco Driussi

A systematic study of avalanche multiplication on a series of In 0.52 Al 0.48 As p-in and n-ip diodes with nominal intrinsic region thicknesses ranging from 0.1 to 2.5...

IEEE Transactions on Electron Devices [], Volume: 54 Issue: 1 Pages: 115-123

Marco De Michielis, David Esseni, Francesco Driussi

Analytical models for the insight into the use of alternative channel materials in ballistic nano-MOSFETs

IEEE Transactions on Electron Devices [IEEE], Volume: 54 Issue: 1 Pages: 115-123

Marco De Michielis, David Esseni, Francesco Driussi

Analytical models for the insight into the use of alternative channel materials in ballistic nano-MOSFETs

IEEE Transactions on Electron Devices [IEEE], Volume: 54 Issue: 1 Pages: 115-123

Marco De Michielis, Elena Ferraro, Davide Rotta, Giovanni Mazzeo, Marco Tagliaferri, Alessandro Crippa, Marco Fanciulli, Enrico Prati

Universal Set of Quantum Gates for Double-Dot Exchange-Only Spin Qubits Under Realistic Conditions

APS Meeting Abstracts [],

FM Bufler, V Aubry-Fortuna, A Bournel, M Braccioli, P Dollfus, David Esseni, C Fiegna, F Gamiz, Marco De Michielis, Pierpaolo Palestri, J Saint-Martin, C Sampedro, E Sangiorgi, Luca Selmi, Paolo Toniutti

Comparison of semiclassical transport formulations including quantum corrections for advanced devices with high-K gate stacks

2010 14th International Workshop on Computational Electronics [IEEE], Pages: 1-4

N Serra, F Conzatti, David Esseni, M De Michielis, Pierpaolo Palestri, Luca Selmi, S Thomas, Terry E Whall, Evan HC Parker, David R Leadley, Liesbeth Witters, A Hikavyy, MJ Hÿtch, F Houdellier, E Snoeck, TJ Wang, WC Lee, G Vellianitis, MJH van Dal, B Duriez, G Doornbos, RJP Lander

Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs

2009 IEEE International Electron Devices Meeting (IEDM) [IEEE], Pages: 1-4

M De Michielis, David Esseni, Pierpaolo Palestri, Luca Selmi

A new multi subband Monte Carlo simulator for nano p-MOSFETs

2008 9th International Conference on Ultimate Integration of Silicon [IEEE], Pages: 67-70

Luca Selmi, Pierpaolo Palestri, David Esseni, Luca Lucci, Marco DE MICHIELIS

An efficient, mixed semiclassical/quantum mechanical model to simulate planar and wire nano-transistors

SLONANO [],

M De Michielis, D Esseni, F Driussi

Trade-off between electron velocity and density of states in ballistic nano-MOSFETs

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. [IEEE], Pages: 165-168

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