-A A +A
This study combines direct measurements of channel strain, electrical mobility measurements and a rigorous modeling approach to provide insight about the strain induced mobility enhancement in FinFETs and guidelines for the device optimization. Good agreement between simulated and measured mobility is obtained using strain components measured directly at device level by a novel technique. A large vertical compressive strain is observed in FinFETs and the simulations show that this helps recover the electron mobility disadvantage of the (110) FinFETs lateral interfaces w.r.t. (100) interfaces, with no degradation of the hole mobility. The model is then used to systematically explore the impact of the fin-width, fin-height and fin-length stress components on n- and p-FinFETs mobility and to identify optimal stress configurations.
Publication date: 
7 Dec 2009

N Serra, F Conzatti, David Esseni, M De Michielis, Pierpaolo Palestri, Luca Selmi, S Thomas, Terry E Whall, Evan HC Parker, David R Leadley, Liesbeth Witters, A Hikavyy, MJ Hytch, F Houdellier, E Snoeck, TJ Wang, WC Lee, G Vellianitis, MJH van Dal, B Duriez, G Doornbos, RJP Lander

Biblio References: 
Pages: 1-4
2009 IEEE International Electron Devices Meeting (IEDM)