High-k materials for high capacitors for BCD and Power discrete Characterization of 2D materials (MoS2) and Si nanowires Magnetic multilayers for spintronics (p-MTJ, i-MTJ, MRAM, STT-RAM, shift register) Dilute magnetic oxides (Fe-, Ni-doped ZrO2) X-ray scattering on thin films and multilayers (X-ray reflectivity, X-ray diffraction) X-ray resonant magnetic scattering Secondary Ion Mass Spectrometry (ToF-SIMS, D-SIMS, S-SIMS) X-ray Photoelectron Spectroscopy Raman Spectroscopy
Dr. Alessio Lamperti graduated in Nuclear Engineering (M.Sci.) at Politecnico di Milano (Milano, Italy) with a project thesis on the structural characterisation of hydrogenated and fluorinated amorphous carbon thin films. After, he obtained the Ph.D. degree "cum laude" in Radiation Science and Technology at Politecnico di Milano (Milano, Italy) in a joint research project with The University of Chicago, The Enrico Fermi Institute (Chicago, USA) financed by a fellowship from Assolombarda (the association of industry in region Lombardy); his Ph.D. thesis focused on use of Secondary Ion Mass Spectrometry (SIMS) as an analytical technique with nanometric lateral resolution to investigate materials science surfaces and cell biology insights. He got a Post-Doc Marie Curie Fellowship with the EU-RTN Ultrasmmoth at the University of Durham (Durham, UK) where he focussed his research on the investigation of thin films, stackings and multilayers for spintronics mainly using x-ray scattering techniques, also using synchrotron light at the Synchrotron Radiation Source -SRS- (Daresbury, UK) and the European Synchrotron Radiation Facility -ESRF- (Grenoble, France). He also contributed to Polarised Neutron Reflectivity experiments at Institut Laue Langevin -ILL- (Grenoble, France). In May 2007, he joined the Materials and Devices for Microelectronics -MDM- Laboratory as Post-Doc Fellow within the EMMA project, focussing his major activities on the structural and physical-chemical characterisation of thin films and layers of transition metals and their binary oxides for MIM applications. From September 2008, he holds a Research Scientist position and broadened his research in the field of emerging concepts for innovative non volatile memories, mainly devoting his attention on the study of charge-trapping (TANOS) stacks incorporating materials with high dielectric constant (high-k) and, currently, on magnetic storage concepts implementing p-MTJs, for STT-RAM or shift register devices, including mature materials, such as CoFeB/MgO, and explorative solutions explorative solutions implementing magnetically doped high-k materials for foreseen MTJs or spin injectors. He also contributed to the characterization of high-k oxides on high mobility substrates (Ge, GaAs). He mainly uses X-Ray scattering techniques (eg.: reflectivity -XRR-, grazing incidence diffraction -GIXRD-) and TOF-SIMS depth profiles. He also is experienced in Visible Raman Spectroscopy, FT-IR.