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Growth and characterization of 2D materials (transition metal dichalcogenides, MoS2, MoTe2, WS2); High-k materials for high capacitors for BCD and Power discrete; Magnetic multilayers for spintronics (p-MTJ, i-MTJ, MRAM, STT-RAM, shift register); Dilute magnetic oxides (Fe-, Ni-doped ZrO2); X-ray scattering on thin films and multilayers (X-ray reflectivity, X-ray diffraction); X-ray resonant magnetic scattering; Secondary Ion Mass Spectrometry (ToF-SIMS, D-SIMS, S-SIMS); X-ray Photoelectron Spectroscopy; FTIR, UV-Vis-NIR and Raman Spectroscopies.
Alessio Lamperti is currently Research Scientist (Technologist) at CNR-IMM Unit of Agrate Brianza (Italy). He got the M. Eng. in Nuclear Engineering and the Ph.D. cum laude in Radiation Science and Technology both at Politecnico di Milano, the latter in a joint research project with The University of Chicago (USA) financed with a fellowship from Assolombarda (the association of industry in region Lombardy). Further, he was a Post Doc Marie Curie Fellow at the Physics Dept., University of Durham (Durham, UK) within EU-RTN Ultrasmooth.
He is recognized, advanced expert in the physical and chemical characterization of materials at the nanoscale down to two-dimensional (2D) layers, with focus on the study of correlations between structure and magnetism in ferromagnetic thin layers, spin valves and in oxide/CoFeB coupled structures, such as MgO/CoFeB/Ta magnetic tunnel junctions. He is also advanced expert in the characterization of oxides grown by Atomic Layer Deposition (ALD) such as pure and Al doped HfO2 or ZrO2, NiO, diluted magnetic oxides (Fe:ZrO2), rare earth oxides (La2O3, Gd2O3).
Since Ph.D., he is experienced in Secondary Ion Mass Spectrometry (SIMS), both on the use of SIMS as analytical technique with nanometric lateral resolution, for surface chemical imaging and, over the years, in dual beam time of flight (ToF) SIMS configuration to obtain chemical depth profiles of complex multilayered stacks integrating nanometer thick layers of high-k dielectrics, ferromagnets, metals, targeting non-volatile memories concepts, with particular emphasis on the evolution of chemical elements interdiffusion phenomena at the interfaces. In this context, he recently succeeded in obtain unique details on the relation between ion irradiation and evolution of the element chemical profiles in ultra-thin Ta/MgO/CoFeB/Ta stacks explaining the observed changes in the magnetic behavior.
He is also expert in X-ray Photoelectron Spectroscopy (XPS), also angle resolved, to retrieve the chemistry at surface and sub-surface interfaces, with focus on oxidation states in Oxide/Metal (including ferromagnets) ultra-thin layers.
Further, he is expert in x-ray scattering techniques (XRR, GI-XRD) using lab equipment and synchrotron light or neutron methods (PNR), to gain knowledge of the correlation between structure, magnetism and electrical properties in nanoscale thin films and multilayers for spintronics and emerging nanoelectronics. In this context he characterized MIM structures for RRAM and TANOS, magnetic storage concepts implementing p-MTJ for STT-MRAM or shift register devices, also CoFeB based, and explorative solutions implementing magnetically doped high-k materials for foreseen MTJs or spin injectors.
Recently, he enlarged his interests on the study of 2D transition metal di-chalcogenides (MoS2, MoTe2, WS2) grown by chemical vapor deposition in respect to structure, chemical, electrical, magnetic and topological properties. Currently, he coordinates the research team developing 2D transition metal dichalcogenides.
He is also experienced in Raman, FT-IR and nIR-VIS-UV optical spectroscopies.
Above mentioned activities were/are taken as key person in the framework of several EU (FP6, FP7, Horizon2020), national (MIUR FIRB and PRIN) and industrial R&D projects; specifically, he was/is Unit responsible for EU-ECSEL R2Power300 “Preparing R2 extension to 300mm for BCD Smart Power”, PRIN HotPlasMoS2 “Hot-electrons in self-organised plasmonic metasurfaces coupled to semiconducting MoS2 nanosheets: photon harvesting in 2D materials” and PRIN aSTAR “Attosecond transient absorption and reflectivity for the study of exotic materials” projects. He collaborates and interacts with semiconductor companies (Micron, STMicroelectronics).
He is is co-author of more than 130 publications on peer reviewed journals and proceedings.
Bibliometric unique Author IDs:
Scopus [Author ID 56273561100]
WoS Researcher (via Publons) [ID B-5637-2015]
ORCID [0000-0003-2061-2963]
Google Scholar [yncGdt0AAAAJ]
Scientific Production
Terahertz and Infrared Plasmon Polaritons in PtTe2 Type‐II Dirac Topological Semimetal
Advanced Materials [], Pages: 2400554
Non‐Oxidative Mechanism in Oxygen‐Based Magneto‐Ionics
Advanced Materials Interfaces [], Volume: 11 Issue: 14 Pages: 2300955
Advanced Science [], Pages: 2406703
Effects of inorganic seed promoters on MoS2 few-layers grown via chemical vapor deposition
Journal of Crystal Growth [North-Holland], Volume: 627 Pages: 127530
Large Area Growth of Silver and Gold Telluride Ultrathin Films via Chemical Vapor Tellurization
Inorganics [MDPI], Volume: 12 Issue: 1 Pages: 33
Crystal Growth & Design [American Chemical Society],
Tailoring the dimensionality of tellurium nanostructures via vapor transport growth
Materials Science in Semiconductor Processing [Pergamon], Volume: 168 Pages: 107838
Impact of CVD chemistry on band alignment at the MoS2/SiO2 interface
Solid-State Electronics [Elsevier], Volume: 209 Pages: 108782
Impact of CVD chemistry on band alignment at the MoS 2/sub>/SiO 2/sub> interface
Solid-State Electronics [Elsevier], Volume: 209
Physical Review Materials [American Physical Society], Volume: 7 Issue: 8 Pages: 083403
Field-driven attosecond charge dynamics in germanium
Nature Photonics [Nature Publishing Group UK], Pages: 1-7
Thermal characterization of Ge-rich GST/TiN thin multilayers for phase change memories
Journal of Applied Physics [AIP Publishing], Volume: 133 Issue: 22
2D Materials‐based Electrochemical Triboelectric Nanogenerators
Advanced Materials [], Pages: 2211037
Controlling interface anisotropy in CoFeB/MgO/HfO2 using dusting layers and magneto-ionic gating
Applied Physics Letters [AIP Publishing LLC], Volume: 122 Issue: 4 Pages: 042402
Electrochimica Acta [Pergamon], Pages: 141909
Photoinduced charge carrier dynamics in germanium
IL NUOVO CIMENTO C [], Volume: 46 Pages: 1-4
Large area growth of single phase TMT nanosheets through simulation guided AP-CVD tellurization
MRS [], Volume: 9
Field-driven attosecond photoinjection dynamics in semiconductors
arXiv preprint arXiv:2212.02157 [],
Magneto‐Ionics in Annealed W/CoFeB/HfO2 Thin Films
Advanced Materials Interfaces [], Volume: 9 Issue: 36 Pages: 2200690
Revealing Nanoscale Disorder in /--/ Ultrathin Films Using Domain-Wall Motion
Physical Review Applied [American Physical Society], Volume: 18 Issue: 5 Pages: 054072
Nanomaterials [MDPI], Volume: 12 Issue: 22 Pages: 4050
Control of magnetoelastic coupling in Ni/Fe multilayers using He+ ion irradiation
Applied Physics Letters [AIP Publishing LLC], Volume: 121 Issue: 18 Pages: 182401
Advanced Materials Interfaces [], Pages: 2200971
Beilstein Journal of Nanotechnology [Beilstein-Institut], Volume: 13 Issue: 1 Pages: 975-985
Revealing nanoscale disorder in W/CoFeB/MgO ultra-thin films using domain wall motion
arXiv e-prints [], Pages: arXiv: 2208.09280
Interface Analysis of MOCVD Grown GeTe/Sb2Te3 and Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires
Nanomaterials [MDPI], Volume: 12 Issue: 10 Pages: 1623
Ambient Pressure Chemical Vapor Deposition of Flat and Vertically Aligned MoS2 Nanosheets
Nanomaterials [MDPI], Volume: 12 Issue: 6 Pages: 973
Synthesis, Properties and Applications of Germanium Chalcogenides [s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affil-iations.], Pages: 135
ECS Meeting Abstracts [IOP Publishing], Issue: 30 Pages: 1012
n-Type Doping of ε-Ga2O3 Epilayers by High-Temperature Tin Diffusion
Acta Materialia [Pergamon], Volume: 210 Pages: 116848
Tailoring the Phase in Nanoscale MoTe2 Grown by Barrier-Assisted Chemical Vapor Deposition
Crystal Growth & Design [American Chemical Society], Volume: 21 Issue: 5 Pages: 2970-2976
Broadband and Tunable Light Harvesting in Nanorippled MoS2 Ultrathin Films
ACS applied materials & interfaces [American Chemical Society], Volume: 13 Issue: 11 Pages: 13508-13516
Stability and universal encapsulation of epitaxial Xenes
Faraday Discussions [The Royal Society of Chemistry], Volume: 227 Pages: 171-183
Vapor phase epitaxy of antimonene-like nanocrystals on germanium by an MOCVD process
Applied Surface Science [North-Holland], Volume: 535 Pages: 147729
Geometrical Engineering of Giant Optical Dichroism in Rippled MoS2 Nanosheets
Advanced Optical Materials [], Pages: 2001408
Evidence of Plasmon Enhanced Charge Transfer in Large‐Area Hybrid Au–MoS2 Metasurface
Advanced Optical Materials [], Pages: 2000653
Changing the Electronic Polarizability of Monolayer MoS2 by Perylene‐Based Seeding Promoters
Advanced Materials Interfaces [], Volume: 7 Issue: 20 Pages: 2000791
Fe/Sb2Te3 Interface Reconstruction through Mild Thermal Annealing
Advanced Materials Interfaces [], Volume: 7 Issue: 19 Pages: 2000905
Vapor phase epitaxy of antimonene-like nanocrystals on germanium by an MOCVD process
Applied Surface Science [North-Holland], Volume: 535 Pages: 147729
Physical Review Materials [American Physical Society], Volume: 4 Issue: 5 Pages: 054417
ECS Meeting Abstracts [IOP Publishing], Issue: 1 Pages: 22
Growth of 2D-molybdenum disulfide on top of magnetite and iron by chemical methods
Thin Solid Films [Elsevier], Volume: 701 Pages: 137943
ECS Meeting Abstracts [IOP Publishing], Issue: 1 Pages: 22
ACS Applied Electronic Materials [American Chemical Society], Volume: 2 Issue: 5 Pages: 1186-1192
Nano Energy [Elsevier], Volume: 68 Pages: 104281
Nano Energy [Elsevier], Volume: 68 Pages: 104281
Fabrication of ordered Sb-Te and In-Ge-Te nanostructures by selective MOCVD
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 53 Issue: 14 Pages: 144002
Fabrication of ordered Sb–Te and In–Ge–Te nanostructures by selective MOCVD
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 53 Issue: 14 Pages: 144002
Epitaxial and large area Sb 2 Te 3 thin films on silicon by MOCVD
RSC Advances [Royal Society of Chemistry], Volume: 10 Issue: 34 Pages: 19936-19942
Materials [Multidisciplinary Digital Publishing Institute], Volume: 13 Issue: 12 Pages: 2786
EPJ Web of Conferences [EDP Sciences], Volume: 238 Pages: 07006
Ultra-broadband photon harvesting in large-area few-layer MoS 2 nanostripe gratings
Nanoscale [Royal Society of Chemistry], Volume: 12 Issue: 48 Pages: 24385-24393
Nonvolatile Ionic Modification of the Dzyaloshinskii-Moriya Interaction
Physical Review Applied [American Physical Society], Volume: 12 Issue: 3 Pages: 034005
High‐Density Sb2Te3 Nanopillars Arrays by Templated, Bottom‐Up MOCVD Growth
Small [], Volume: 15 Issue: 37 Pages: 1901743
Materials Characterization [Elsevier], Volume: 153 Pages: 92-102
Large-area patterning of substrate-conformal MoS2 nano-trenches
Nano Research [Springer-Nature],
Chemical, structural and magnetic properties of the Fe/Sb2Te3 interface
Journal of Magnetism and Magnetic Materials [North-Holland], Volume: 474 Pages: 632-636
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 37 Issue: 2 Pages: 021205
Si and Sn doping of ε-Ga2O3 layers
APL Materials [AIP Publishing], Volume: 7 Issue: 3
Physical Review B [American Physical Society], Volume: 99 Issue: 5 Pages: 054431
Physical Review Applied [American Physical Society], Volume: 10 Issue: 6 Pages: 064053
Chemical, structural and magnetic properties of the Fe/Sb2Te3 interface
Journal of Magnetism and Magnetic Materials [North-Holland],
Interface phenomena between CdTe and ZnTe: Cu back contact
Solar Energy [Pergamon], Volume: 176 Pages: 186-193
Sensors and Actuators A: Physical [Elsevier], Volume: 282 Pages: 124-131
ACS Applied Nano Materials [American Chemical Society], Volume: 1 Issue: 9 Pages: 4633-4641
Ultrafast Anisotropic Exciton Dynamics In Nanopatterned MoS2 Sheets
ACS Photonics [American Chemical Society], Volume: 5 Issue: 8 Pages: 3363-3371
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [American Vacuum Society], Volume: 36 Issue: 2 Pages: 02D404
Effect of annealing treatments on CeO2 grown on TiN and Si substrates by atomic layer deposition
Beilstein journal of nanotechnology [Beilstein-Institut], Volume: 9 Issue: 1 Pages: 890-899
Electronic band structures of undoped and P-doped Si nanocrystals embedded in SiO 2
Journal of Materials Chemistry C [Royal Society of Chemistry], Volume: 6 Issue: 1 Pages: 119-126
Designer Shape Anisotropy on Transition‐Metal‐Dichalcogenide Nanosheets
Advanced Materials [],
MRS Advances [Springer International Publishing], Volume: 2 Issue: 52 Pages: 3005-3010
Influence of Block Copolymer feature size on Reactive Ion Etching pattern transfer into silicon.
Nanotechnology [IOP Publishing], Volume: 28 Issue: 40 Pages: 404001
Thin Solid Films [Elsevier], Volume: 636 Pages: 78-84
Anisotropic MoS2 Nanosheets Grown on Self‐Organized Nanopatterned Substrates
Advanced Materials [], Volume: 29 Issue: 19 Pages: 1605785
Anisotropic ultrafast response of MoS $ _ {\mathrm {2}} $ on rippled substrates
Bulletin of the American Physical Society [American Physical Society], Volume: 62
Anisotropic ultrafast response of MoS2 on rippled substrates
APS March Meeting Abstracts [], Volume: 2017 Pages: V30. 013
Electronic Band Structure of undoped and P-doped Si Nanocrystals embedded in SiO 2
Journal of Materials Chemistry C [Royal Society of Chemistry],
Designer Shape Anisotropy on Transition‐Metal‐Dichalcogenide Nanosheets
Advanced Materials [],
Engineering the Growth of MoS2 via Atomic Layer Deposition of Molybdenum Oxide Film Precursor
Advanced Electronic Materials [], Volume: 2 Issue: 10 Pages: 1600330
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films [American Vacuum Society], Volume: 34 Issue: 5 Pages: 051510
(Invited) Silicon Nanowires: Donors, Surfaces and Interface Defects
ECS Transactions [The Electrochemical Society], Volume: 75 Issue: 4 Pages: 179-187
Silicon Nanowires: Donors, Surfaces and Interface Defects
ECS Transactions [The Electrochemical Society], Volume: 75 Issue: 4 Pages: 179-187
Silicon Nanowires: Donors, Surfaces and Interface Defects
ECS Transactions [IOP Publishing], Volume: 75 Issue: 4 Pages: 179
Evidence of Native Cs Impurities and Metal–Insulator Transition in MoS2 Natural Crystals
Advanced Electronic Materials [], Volume: 2 Issue: 6 Pages: 1600091
Applied Surface Science [North-Holland], Volume: 368 Pages: 470-476
Atomic Layer Deposition of hexagonal ErFeO 3 thin films on SiO 2/Si
Thin Solid Films [Elsevier], Volume: 604 Pages: 18-22
Nanotechnology [IOP Publishing], Volume: 27 Issue: 17 Pages: 175703
Electron Confinement at the Si/MoS2 Heterosheet Interface
Advanced Materials Interfaces [Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim],
Defects and Dopants in Silicon Nanowires Produced by Metal-Assisted Chemical Etching
ECS Journal of Solid State Science and Technology [The Electrochemical Society], Volume: 5 Issue: 4 Pages: P3138-P3141
(Invited) Defects and Dopants in Silicon and Germanium Nanowires
ECS Transactions [The Electrochemical Society], Volume: 69 Issue: 5 Pages: 69-79
Defects and Dopants in Silicon and Germanium Nanowires
ECS Transactions [IOP Publishing], Volume: 69 Issue: 5 Pages: 69
Applied Physics Letters [AIP Publishing LLC], Volume: 107 Issue: 3 Pages: 032401
Applied Physics Letters [], Volume: 107 Issue: 3
Electron confinement at the Si-MoS2 heterosheet junction
Bulletin of the American Physical Society [American Physical Society], Volume: 60
Physical Review B [American Physical Society], Volume: 91 Issue: 1 Pages: 014433
Physical Review B [American Physical Society], Volume: 91 Issue: 1
Physical Review B [American Physical Society], Volume: 90 Issue: 20 Pages: 205201
Effect of a thin Ti interfacial layer on the thermal resistance of Ge2Sb2Te5-TiN stack
Applied Physics Letters [AIP Publishing LLC], Volume: 105 Issue: 12 Pages: 121903
Interfacial Dzyaloshinskii-Moriya interaction in Ta\Co20Fe60B20\MgO nanowires
arXiv preprint arXiv:1409.3753 [],
Thin Solid Films [Elsevier], Volume: 563 Pages: 44-49
Thin solid films [Elsevier], Volume: 563 Pages: 44-49
Thin Solid Films [], Volume: 563
Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition
Journal of Applied Physics [American Institute of Physics], Volume: 115 Issue: 17 Pages: 17D907
Electronic and magnetic properties of iron doped zirconia: Theory and experiment
Journal of Applied Physics [American Institute of Physics], Volume: 115 Issue: 17 Pages: 17D718
Simulation Study of the Trapping Properties of ${\ rm HfO} _ {2} $-Based Charge-Trap Memory Cells
IEEE Transactions on Electron Devices [IEEE], Volume: 61 Issue: 6 Pages: 2056-2063
ACS applied materials & interfaces [American Chemical Society], Volume: 6 Issue: 5 Pages: 3455-3461
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 47 Issue: 10 Pages: 102002
Applied Surface Science [North-Holland], Volume: 291 Pages: 3-5
Applied surface science [North-Holland], Volume: 291 Pages: 3-5
Low-temperature atomic layer deposition of MgO thin films on Si
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 46 Issue: 48 Pages: 485304
High temperature thermal conductivity of amorphous Al2O3 thin films grown by low temperature ALD
Advanced Engineering Materials [], Volume: 15 Issue: 11 Pages: 1046-1050
High Temperature Thermal Conductivity of Amorphous Al2O3 Thin Films Grown by Low Temperature ALD
Advanced Engineering Materials [], Volume: 15 Issue: 11 Pages: 1046-1050
Low depinning fields in Ta-CoFeB-MgO ultrathin films with perpendicular magnetic anisotropy
Applied Physics Letters [American Institute of Physics], Volume: 103 Issue: 18 Pages: 182401
ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 2 Issue: 9 Pages: P395
Thermal resistance at Al-Ge2Sb2Te5 interface
Applied Physics Letters [American Institute of Physics], Volume: 102 Issue: 18 Pages: 181907
Exploiting magnetic properties of Fe doping in zirconia
The European Physical Journal B [Springer-Verlag], Volume: 86 Issue: 5 Pages: 1-6
Thin solid films [Elsevier], Volume: 533 Pages: 75-78
Atomic layer-deposited Al–HfO 2/SiO 2 bi-layers towards 3D charge trapping non-volatile memory
Thin Solid Films [Elsevier], Volume: 533 Pages: 9-14
Thin Solid Films [Elsevier], Volume: 533 Pages: 79-82
Stabilization of tetragonal/cubic phase in Fe doped zirconia grown by atomic layer deposition
Thin Solid Films [Elsevier], Volume: 533 Pages: 83-87
ECS Transactions [IOP Publishing], Volume: 50 Issue: 13 Pages: 11
Role of oxygen vacancies on the structure and density of states of iron-doped zirconia
Physical Review B [American Physical Society], Volume: 87 Issue: 8 Pages: 085206
Surface and interface analysis [], Volume: 45 Issue: 1 Pages: 390-393
Multi-Layered Al2O3/HfO2/SiO2/Si3N4/SiO2 Thin Dielectrics for Charge Trap Memory Applications
ECS Journal of Solid State Science and Technology [The Electrochemical Society], Volume: 2 Issue: 1 Pages: N1-N5
Multi-Layered Al2O3/HfO2/SiO2/Si3N4/SiO2 Thin Dielectrics for Charge Trap Memory Applications
ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 2 Issue: 1 Pages: N1
Inverse Problems in Science and Engineering [Taylor & Francis Group], Volume: 20 Issue: 7 Pages: 941-950
ECS Journal of Solid State Science and Technology [IOP Publishing], Volume: 1 Issue: 1 Pages: P5
Journal of Applied Physics [American Institute of Physics], Volume: 112 Issue: 1 Pages: 014107
ECS Meeting Abstracts [IOP Publishing], Issue: 28 Pages: 2457
Journal of Applied Physics [American Institute of Physics], Volume: 111 Issue: 9 Pages: 093501
Thin solid films [Elsevier], Volume: 520 Issue: 14 Pages: 4820-4822
Thin solid films [Elsevier], Volume: 520 Issue: 14 Pages: 4617-4621
Thin solid films [Elsevier], Volume: 520 Issue: 14 Pages: 4617-4621
Thin Solid Films [], Volume: 520
Journal of Applied Physics [American Institute of Physics], Volume: 111 Issue: 7 Pages: 07B107
Role of the Oxygen Content in the GeO2 Passivation of Ge Substrates as a Function of the Oxidizer
Journal of The Electrochemical Society [IOP Publishing], Volume: 159 Issue: 6 Pages: H555
Effects of thermal treatments on the trapping properties of HfO2 films for charge trap memories
Applied Physics Express [IOP Publishing], Volume: 5 Issue: 2 Pages: 021102
Applied Physics Letters [American Institute of Physics], Volume: 99 Issue: 23 Pages: 232907
Transitivity of band offsets between semiconductor heterojunctions and oxide insulators
Applied Physics Letters [American Institute of Physics], Volume: 99 Issue: 17 Pages: 172101
ECS Transactions [The Electrochemical Society], Volume: 41 Issue: 3 Pages: 203-221
ECS Transactions [IOP Publishing], Volume: 41 Issue: 3 Pages: 203
Journal of nuclear materials [North-Holland], Volume: 416 Issue: 1-2 Pages: 173-178
Journal of The Electrochemical Society [IOP Publishing], Volume: 158 Issue: 10 Pages: G221
Microelectronic engineering [Elsevier], Volume: 88 Issue: 7 Pages: 1174-1177
Detection of the tetragonal phase in atomic layer deposited La-doped ZrO2 thin films on germanium
Journal of The Electrochemical Society [IOP Publishing], Volume: 158 Issue: 8 Pages: G194
Microelectronic Engineering [Elsevier], Volume: 88 Issue: 4 Pages: 403-406
ECS Transactions [IOP Publishing], Volume: 35 Issue: 3 Pages: 481
Microelectronic engineering [Elsevier], Volume: 88 Issue: 4 Pages: 518-521
Microelectronic engineering [Elsevier], Volume: 88 Issue: 4 Pages: 403-406
Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices
Journal of Applied Physics [American Institute of Physics], Volume: 109 Issue: 3 Pages: 034506
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 29 Issue: 1 Pages: 01AE04
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena [American Vacuum Society], Volume: 29 Issue: 1 Pages: 01AE03
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms [North-Holland], Volume: 268 Issue: 19 Pages: 3132-3136
Journal of Physics D: Applied Physics [IOP Publishing], Volume: 43 Issue: 6 Pages: 065002
Proc. ESSDERC, 2010 Proc. ESSDERC, 2010 408, 2010
Proc. ESSDERC [], Volume: 408
Heteroepitaxial sputtered Ge on Si (100): Nanostructure and interface morphology
EPL (Europhysics Letters) [IOP Publishing], Volume: 88 Issue: 2 Pages: 28005
Transition Metal Binary Oxides for ReRAM Applications
ECS Transactions [IOP Publishing], Volume: 25 Issue: 6 Pages: 411
Dehydrogenation at the Fe/Lu 2 O 3 interface upon rapid thermal annealing
Journal of Magnetism and Magnetic Materials [North-Holland], Volume: 321 Issue: 15 Pages: 2350-2353
Dehydrogenation at the Fe/Lu2O3 interface upon rapid thermal annealing
Journal of magnetism and magnetic materials [North-Holland], Volume: 321 Issue: 15 Pages: 2350-2353
Effect of high-temperature annealing on lanthanum aluminate thin films grown by ALD on Si (100)
Microelectronic engineering [Elsevier], Volume: 86 Issue: 7-9 Pages: 1696-1699
Microelectronic Engineering [Elsevier], Volume: 85 Issue: 12 Pages: 2425-2429
Microelectronic Engineering [Elsevier], Volume: 85 Issue: 12 Pages: 2414-2419
Journal of Applied Physics [American Institute of Physics], Volume: 104 Issue: 9 Pages: 093534
Thin Solid Films [Elsevier], Volume: 516 Issue: 22 Pages: 7962-7966
Ferromagnetic resonance linewidth reduction in Fe∕ Au multilayers using ion beams
Journal of Applied Physics [American Institute of Physics], Volume: 103 Issue: 7 Pages: 07B518
Journal of Physics. Condensed Matter [], Volume: 20
Journal of Physics: Condensed Matter [IOP Publishing], Volume: 20 Issue: 10 Pages: 104217
Reproducibility in X-ray reflectometry: results from the first world-wide round-robin experiment
Journal of Applied Crystallography [International Union of Crystallography], Volume: 41 Issue: 1 Pages: 143-152
Layer and Interface Structure of CoFe/Ru Multilayers
ACTA PHYSICA POLONICA SERIES A [POLISH ACADEMY OF SCIENCES WARSAW], Volume: 112 Issue: 6 Pages: 1243
Element specific separation of bulk and interfacial magnetic hysteresis loops
Applied Physics Letters [American Institute of Physics], Volume: 91 Issue: 13 Pages: 132510
Exchange coupling between an amorphous ferromagnet and a crystalline antiferromagnet
Journal of Applied Physics [American Institute of Physics], Volume: 102 Issue: 5 Pages: 053911
Interface stability of magnetic tunnel barriers and electrodes
physica status solidi (a) [WILEY‐VCH Verlag], Volume: 204 Issue: 8 Pages: 2778-2784
Morphological and structural studies of WO x thin films deposited by laser ablation
Applied surface science [North-Holland], Volume: 253 Issue: 19 Pages: 8258-8262
Morphological and structural studies of WOx thin films deposited by laser ablation
Applied surface science [North-Holland], Volume: 253 Issue: 19 Pages: 8258-8262
高誘電率ゲート絶縁膜の信頼性 (先端 LSI 技術と信頼性)
日本信頼性学会誌 信頼性 [日本信頼性学会], Volume: 29 Issue: 4 Pages: 198-205
Structural and magnetic characterization of Heusler multilayers
Verhandlungen der Deutschen Physikalischen Gesellschaft [], Volume: 42
Interface stability in CoFe and CoFeB based multilayers
Superlattices and Microstructures [Academic Press], Volume: 41 Issue: 2-3 Pages: 122-126
Surface analytical chemical imaging and morphology of Cu–Cr alloy
Surface and Coatings Technology [Elsevier], Volume: 200 Issue: 22-23 Pages: 6373-6377
Interface sharpening in CoFeB magnetic tunnel junctions
Applied physics letters [American Institute of Physics], Volume: 88 Issue: 16 Pages: 162505
SIMS direct surface imaging of Cu 1− x Cr x formation
Applied surface science [North-Holland], Volume: 252 Issue: 6 Pages: 2288-2296
SIMS direct surface imaging of Cu {sub 1-x} Cr {sub x} formation
Applied Surface Science [], Volume: 252
Appl. Phys. Lett [], Volume: 89 Pages: 082908
Elemental distribution in fluorinated amorphous carbon thin films
Journal of the American Society for Mass Spectrometry [Springer-Verlag], Volume: 16 Issue: 1 Pages: 126-131
Attosecond photoinjection dynamics in germanium
Advances in Ultrafast Condensed Phase Physics IV [SPIE], Pages: PC129920O
European Materials Research Society, Date: 2024/05/26-2024/05/31, Location: Strasbourg France [],
Photoexcitation in germanium probed by attosecond transient reflectivity spectroscopy
Ultrafast Phenomena and Nanophotonics XXVIII [SPIE], Volume: 12884 Pages: 31-36
2023 IEEE Nanotechnology Materials and Devices Conference (NMDC) [IEEE], Pages: 411-415
FISMAT 2023, Date: 2023/09/04-2023/09/08, Location: Milano Italy [],
Light-Driven Attosecond Photoinjection in Germanium
The European Conference on Lasers and Electro-Optics [Optica Publishing Group], Pages: cg_2_2
Attosecond Inter-and Intra-Band Charge Carrier Dynamics in Germanium
International Conference on Ultrafast Phenomena [Optica Publishing Group], Pages: W4A. 32
Ettore Majorana Foundation and Centre for Scientific Culture_Phenomenon of 1/f noise in condensed matter physics, Date: 2022/04/24-2022/04/29, Location: Erice (Italy) [],
Different Strategies to obtain MoS2 nanosheets by implementing CVD on different substrates
International Conference on Newtimes and New trends in Material Science and thin Films, Date: 2021/06/14-2021/06/18, Location: Online [],
Electric field control of magnetism
Spintronics XIII [International Society for Optics and Photonics], Volume: 11470 Pages: 114703G
Linear and Nonlinear Optical Properties of Anisotropic Few-Layer MoS2 sheets
E-MRS 2018 Fall Meeting [],
Simulation of micro-mirrors for optical MEMS
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) [IEEE], Pages: 81-84
Optical characterization of anisotropic MoS 2 nanosheets
2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) [IEEE], Pages: 1-1
Negative-U trapping centers evidenced by admittance spectroscopy at the Ge/GeO2 interface
E-MRS spring meeting [],
Thermal Properties of In-Sb-Te Thin Films for Phase Change Memory Application
Advances in Science and Technology [Trans Tech Publications Ltd], Volume: 95 Pages: 113-119
Magnetic domain-wall racetrack memory for high density and fast data storage
2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology [IEEE], Pages: 1-4
Experimental and simulation study of the program efficiency of HfO 2 based charge trapping memories
2010 Proceedings of the European Solid State Device Research Conference [IEEE], Pages: 408-411
FOTONICA-2009 [ITA], Pages: B5. 6-1-B5. 6-4
FOTONICA-2009 [ITA], Pages: B5. 6-1-B5. 6-4
Near surface damage characterisation of biomedical grade Y-TZP
TISSUE ENGINEERING [MARY ANN LIEBERT INC], Volume: 13 Issue: 6 Pages: 1388-1388
Predicting structural stability of ion bombarded thin films
Intl. Vacuum Conf. 16 [Editrice Compositori], Pages: 269-276
Predicting structural stability of ion bombarded thin films
Intl. Vacuum Conf. 16 [Editrice Compositori], Pages: 269-276
Magnetic Nano-and Microwires [Woodhead Publishing], Pages: 333-378
Magnetic Nano-and Microwires [Elsevier], Volume: 27 Issue: 3 Pages: 333-378
Mössbauer spectroscopy study of interfaces for spintronics
ISIAME 2008 [Springer, Berlin, Heidelberg], Pages: 371-376