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Type: 
Journal
Description: 
As electrical atomic force microscopy (AFM) gains popularity for characterizing two-dimensional (2D) materials, understanding the relationship between analytical conditions and nanoscopic material properties is crucial. This study focuses on contact-mode electrical methods, using MoS2 as a reference material and conductive AFM (C-AFM) as the analysis technique. We investigate the impact of back contact configuration, tip-sample pressure, voltage polarity, and moisture-induced surface contamination on the extraction of localized electrical properties, including in-plane leakage current and defectivity. Our findings highlight the importance of balancing tip-sample contact resistance and the physical distance between the probe and back contact when assessing in-plane leakage current. Additionally, we explore how tip-sample to back contact distance affects the extraction of Schottky barrier height (SBH) using …
Publisher: 
Pergamon
Publication date: 
15 Mar 2025
Authors: 

Md Ashiqur Rahman Laskar, Srijan Chakrabarti, Sakib Ahmed, S Amir Ghoreishi, Pinakapani Tummala, Valeri Afanas' ev, Alessandro Molle, Alessio Lamperti, Umberto Celano

Biblio References: 
Volume: 188 Pages: 109247
Origin: 
Materials Science in Semiconductor Processing