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Type: 
Journal
Description: 
The growth of atomically thin MoS 2 films is achieved by sulfurization of molybdenum oxide precursor films grown by atomic layer deposition. The quality features of the MoS 2 films are engineered controlling the stoichiometry, morphology, and thickness of the precursors. The interface interaction between the precursor films and the substrates (SiO 2 or sapphire) plays a key role in the MoS 2 formation.
Publisher: 
Publication date: 
1 Oct 2016
Authors: 

Christian Martella, Pierpaolo Melloni, Eugenio Cinquanta, Elena Cianci, Mario Alia, Massimo Longo, Alessio Lamperti, Silvia Vangelista, Marco Fanciulli, Alessandro Molle

Biblio References: 
Volume: 2 Issue: 10 Pages: 1600330
Origin: 
Advanced Electronic Materials