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Type: 
Journal
Description: 
In the present work we focus on the investigation by electron spin resonance (EPR) and complementary techniques (such as SEM, ToF-SIMS, XPS) of silicon nanowires produced by metal-assisted chemical etching (MACE). In particular we will report on the impact of the MACE process on the donors (P and As) and on surface passivation processes based on H or S. The efficiency of the passivation processes has been monitored by following the EPR signals of the P b centers at the Si/SiO 2 interface.
Publisher: 
The Electrochemical Society
Publication date: 
25 Aug 2016
Authors: 
Biblio References: 
Volume: 75 Issue: 4 Pages: 179-187
Origin: 
ECS Transactions