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Taking part in  fabrication of the resistive siwtching devices, electrical characterization, and understanding of the switching properties. He is also taking part in developing programs for carrying out electrical characterization.


Mrinmoy Dutta has joined the group led by Dr. Sabina Spiga in the H2020 MEMSCALES project in March, 2021. His current research area includes exploring the cation based memory devices for analogue computing. He has authored and co-authored articles in various journals such as Advanced Electronic Materials, Vacuum, Electronics, etc. and taken part in various conferences such as IMW, IWDTF, VLSI-TSA, etc. 

Mrinmoy Dutta has carried out PhD research work on cation based memory devices in Chang Gung University, Taiwan. During PhD he was a recipient of the Ministry of Science and Technology, Taiwan project grant for carrying out research on resistive switching memory devices and their application. His thesis title was: Improvement of resistive switching memory using Cu filament based interfacial engineering in high-k/MoS2 electrolyte and its neuromorphic/bio-sensing application. He has pursued Master of Technology in Materials Sc. and Engineering from Jadavpur University with GATE scholarship awarded by Ministry of Human Resources and Development, Govt. of India. He has also pursued Masters of Science in Electronics from University of Calcutta. 

His research activities are available in https://scholar.google.com/citations?user=U6R5hD0AAAAJ&hl=en. 

His hobbies include numismatics, traveling, hiking, and planting.

Scientific Production

Asim Senapati, Sourav Roy, Yu-Feng Lin, Mrinmoy Dutta, Siddheswar Maikap

Oxide-electrolyte thickness dependence diode-like threshold switching and high on/off ratio characteristics by using Al2O3 based CBRAM

Electronics [Multidisciplinary Digital Publishing Institute], Volume: 9 Issue: 7 Pages: 1106

Mrinmoy Dutta, Asim Senapati, Sreekanth Ginnaram, Siddheswar Maikap

Resistive switching memory and artificial synapse by using Ti/MoS2 based conductive bridging cross-points

Vacuum [Elsevier], Volume: 176 Pages: 109326

Jiantai Timothy Qiu, Subhranu Samanta, Mrinmoy Dutta, Sreekanth Ginnaram, Siddheswar Maikap

Controlling Resistive Switching by Using an Optimized MoS2 Interfacial Layer and the Role of Top Electrodes on Ascorbic Acid Sensing in TaOx-Based RRAM

Langmuir [American Chemical Society], Volume: 35 Issue: 11 Pages: 3897-3906

Mrinmoy Dutta, Siddheswar Maikap, Jiantai Timothy Qiu

Controlling Conductive Filament and Tributyrin Sensing Using an Optimized Porous Iridium Interfacial Layer in Cu/Ir/TiNxOy/TiN

Advanced Electronic Materials [Wiley], Volume: 5 Issue: 2 Pages: 1800288

Somsubhra Chakrabarti, Rajeswar Panja, Sourav Roy, Anisha Roy, Subhranu Samanta, Mrinmoy Dutta, Sreekanth Ginnaram, Siddheswar Maikap, Hsin-Ming Cheng, Ling-Na Tsai, Ya-Ling Chang, Rajat Mahapatra, Debanjan Jana, Jian-Tai Qiu, Jer-Ren Yang

Evolution of resistive switching mechanism through H2O2 sensing by using TaOx-based material in W/Al2O3/TaOx/TiN structure

Applied Surface Science [North-Holland], Volume: 433 Pages: 51-59

Subhranu Samanta, Sheikh Ziaur Rahaman, Anisha Roy, Surajit Jana, Somsubhra Chakrabarti, Rajeswar Panja, Sourav Roy, Mrinmoy Dutta, Sreekanth Ginnaram, Amit Prakash, Siddheswar Maikap, Hsin-Ming Cheng, Ling-Na Tsai, Jian-Tai Qiu, Samit K Ray

Understanding of multi-level resistive switching mechanism in GeO x through redox reaction in H 2 O 2/sarcosine prostate cancer biomarker detection

Scientific reports [Nature Publishing Group], Volume: 7 Issue: 1 Pages: 1-12

Pankaj Kumar, Siddheswar Maikap, Sreekanth Ginnaram, Jian-Tai Qiu, Debanjan Jana, Somsubhra Chakrabarti, Subhranu Samanta, Kanishk Singh, Anisha Roy, Surajit Jana, Mrinmoy Dutta, Ya-Ling Chang, Hsin-Ming Cheng, Rajat Mahapatra, Hsien-Chin Chiu, Jer-Ren Yang

Cross-point resistive switching memory and urea sensing by using annealed GdOx film in IrOx/GdOx/W structure for biomedical applications

Journal of The Electrochemical Society [IOP Publishing], Volume: 164 Issue: 4 Pages: B127

S Roy, S Maikap, G Sreekanth, M Dutta, D Jana, YY Chen, JR Yang

Improved resistive switching phenomena and mechanism using Cu-Al alloy in a new Cu: AlOx/TaOx/TiN structure

Journal of Alloys and Compounds [Elsevier], Volume: 637 Pages: 517-523

Debanjan Jana, Mrinmoy Dutta, Subhranu Samanta, Siddheswar Maikap

RRAM characteristics using a new Cr/GdOx/TiN structure

Nanoscale Research Letters [Springer], Volume: 9 Issue: 680 Pages: 1-9

Asim Senapati, Sreekanth Ginnaram, Mrinmoy Dutta, Siddheswar Maikap

MoS2 based CBRAM with Mo/Ti barrier layer for artificial synapse application

2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) [IEEE], Pages: 143-144

Mrinmoy Dutta, Sreekanth Ginnaram, Anisha Roy, Siddheswar Maikap

Cu Filament Based Resistive Switching and Oxidation Reduction through Dopamine Sensing in Novel Cu/MoS2/TinN Structure

2018 IEEE International Memory Workshop (IMW) [IEEE], Pages: 1-4

Somsubhra Chakrabarti, Debanjan Jana, Mrinmoy Dutta, Siddheswar Maikap, Yi-Yan Chen, Jer-Ren Yang

Impact of AlOxinterfacial layer and switching mechanism in W/AlOx/TaOx/TiN RRAMs

2014 IEEE 6th International Memory Workshop (IMW) [IEEE], Pages: 1-4