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PhD Student


My activities span from the growth to the characterization of Topological Insulators (TIs). The growth is performed by means of Metal Organic Chemical Vapour Deposition (MOCVD) technique. Such technique allows us to grow with chemical methods on 4'' Sillicon substrates, paving the way for a realistic transfer of TI-based devices from academic laboratories to the micro and nanoelectronic industry. Among my activities there is also the electrical characterization of these and other materials produced in the lab. The electrical characterization is performed by exploiting a dedicated magnetotransport set up equipped with a closed-loop He cryostat able to control the temperature from 5 to 290 K either on simple thin films or on multilayer structures fabricated thanks to our clean room expertise. 



Curriculum (PDF): 

Scientific Production

Roberto Mantovan Emanuele Longo, Lorenzo Locatelli, Polychronis Tsipas, Akylas Lintzeris, Athanasios Dimoulas, Marco Fanciulli, Massimo Longo

Exploiting the close-to-Dirac point shift of Fermi level in Sb2Te3/Bi2Te3 topological insulator heterostructure for spin-charge conversion

ACS Appl. Mater. Interfaces [https://pubs.acs.org/doi/full/10.1021/acsami.3c08830], Volume: 15 Pages: 50237-50245

Roberto Mantovan, Lorenzo Locatelli, Polychronis Tsipas, Athanasios Dimoulas, Akylas Lintzeris, Emanuele Longo, Arun Kumar, Massimo Longo

Close-to-Dirac point shift of large-area MOCVD-grown Bi2Te3’s Fermi level following growth on Sb2Te3

Bulletin of the American Physical Society [American Physical Society],

L Locatelli, A Kumar, P Tsipas, A Dimoulas, E Longo, R Mantovan

Magnetotransport and ARPES studies of the topological insulators Sb2Te3 and Bi2Te3 grown by MOCVD on large-area Si substrates

Scientific Reports [Nature Publishing Group UK], Volume: 12 Issue: 1 Pages: 3891

Emanuele Longo, Matteo Belli, Mario Alia, Martino Rimoldi, Raimondo Cecchini, Massimo Longo, Claudia Wiemer, Lorenzo Locatelli, Polychronis Tsipas, Athanasios Dimoulas, Gianluca Gubbiotti, Marco Fanciulli, Roberto Mantovan

Large Spin‐to‐Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Silicon

Advanced Functional Materials [], Volume: 32 Issue: 4 Pages: 2109361

Emanuele Longo, Lorenzo Locatelli, Matteo Belli, Mario Alia, Arun Kumar, Massimo Longo, Marco Fanciulli, Roberto Mantovan

Spin-Charge Conversion in Fe/Au/Sb2Te3 Heterostructures as Probed By Spin Pumping Ferromagnetic Resonance

Advanced Materials Interfaces [], Volume: 8 Issue: 23 Pages: 2101244

Arun Kumar, Raimondo Cecchini, Lorenzo Locatelli, Claudia Wiemer, Christian Martella, Lucia Nasi, Laura Lazzarini, Roberto Mantovan, Massimo Longo

Large-Area MOVPE Growth of Topological Insulator Bi2Te3 Epitaxial Layers on i-Si(111)

Crystal Growth & Design [American Chemical Society], Volume: 21 Issue: 7 Pages: 4023-4029