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Large-scale integration of MoS 2 in electronic devices requires the development of reliable and cost-effective deposition processes, leading to uniform MoS 2 layers on a wafer scale. Here we report on the detailed study of the heterogeneous vapor–solid reaction between a pre-deposited molybdenum solid film and sulfur vapor, thus resulting in a controlled growth of MoS 2 films onto SiO 2/Si substrates with a tunable thickness and cm 2-scale uniformity. Based on Raman spectroscopy and photoluminescence, we show that the degree of crystallinity in the MoS 2 layers is dictated by the deposition temperature and thickness. In particular, the MoS 2 structural disorder observed at low temperature (< 750 C) and low thickness (two layers) evolves to a more ordered crystalline structure at high temperature (1000 C) and high thickness (four layers). From an atomic force microscopy investigation prior to and after …
IOP Publishing
Publication date: 
17 Mar 2016

Silvia Vangelista, Eugenio Cinquanta, Christian Martella, Mario Alia, Massimo Longo, Alessio Lamperti, Roberto Mantovan, Francesco Basso Basset, Fabio Pezzoli, Alessandro Molle

Biblio References: 
Volume: 27 Issue: 17 Pages: 175703