High dielectric constant (high‐κ) oxides are foreseen replacement materials in innovative metal–oxide–semiconductor devices and memory capacitors. In particular, when considering nonvolatile memories, the charge‐trapping concept appears to be a promising solution for flash‐type floating gate replacement. Among the high‐κ oxide properties to be considered, it is essential to study the compatibility towards the integration of these materials in a complementary metal–oxide–semiconductor process, in particular to control the stack integrity and any onset of diffusion phenomena upon thermal treatments at temperatures higher than 1000 °C. Here, we report on the results obtained from time‐of‐flight secondary ion mass spectrometry depth profiling of stacks on the basis of high‐κ/SiO2/Si, integrating HfO2, ZrO2, or DyScOx as charge‐trapping layer or high‐κ/SixNy/SiO2/Si integrating DyScOx as control (blocking …