Type:
Journal
Description:
Magnetic tunnel junctions, i.e. the combination of two ferromagnetic electrodes separated by an ultrathin tunnel oxide barrier, are core elements in a large variety of spin-based devices. We report on the use of combined chemical vapor and atomic layer deposition processes for the synthesis of magnetic tunnel junctions with no vacuum break. Structural, chemical and morphological characterizations of selected ferromagnetic and oxide layers are reported, together with the evidence of tunnel magnetoresistance effect in patterned Fe/MgO/Co junctions.
Publisher:
Elsevier
Publication date:
1 May 2012
Biblio References:
Volume: 520 Issue: 14 Pages: 4820-4822
Origin:
Thin solid films