In the view of improving standard TANOS stacks, a possible route is the replacement of Al2O3 blocking oxide with materials with higher dielectric constant κ, as this would increase the electric field across the tunnel oxide. A possible solution is to integrate rare earth scandates. Among the scandates, DyScO3 appears as an attractive material due to the reported high-κ value. Films with 10–30 nm nominal thickness were grown by atomic layer deposition (ALD) on Si substrates for process optimization and structural characterization. Sc(thd)3 and Dy(thd)3 were used as Sc and Dy precursors and O3 as oxidizing agent. First, Sc2O3 and Dy2O3 growth process was optimized by changing growth temperature (Tg) and ALD cycle. The best conditions for the deposition of the ternary DyScO films were found to be Tg=350 °C and Dy:Sc=1:1 pulsing ratio. Optimized films were also grown on Si-rich SiN for integration as …