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Type: 
Journal
Description: 
We report on the change of the characteristic times of the random telegraph signal (RTS) in a MOSFET operated under microwave irradiation up to 40 GHz as the microwave field power is raised. The effect is explained by considering the time dependency of the transition probabilities due to a harmonic voltage generated by the microwave field that couples with the wires connecting the MOSFET. The RTS experimental data are in agreement with the prediction obtained with our model.
Publisher: 
North-Holland
Publication date: 
29 Oct 2007
Authors: 

Enrico Prati, Marco Fanciulli, Alessandro Calderoni, Giorgio Ferrari, Marco Sampietro

Biblio References: 
Volume: 370 Issue: 5-6 Pages: 491-493
Origin: 
Physics Letters A