Recently, the topological insulators (TIs) antimony telluride (Sb2Te3) and bismuth telluride (Bi2Te3) are attracting high interest for applications based on spin-charge interconversion mechanisms. Aiming to make a step toward the technology transfer, it is of major importance to achieve and investigate epitaxial quality-TIs on large area Si-based substrates. In view of that, we report here magnetotransport and angle-resolved photoemission spectroscopy (ARPES) studies on Sb2Te3 and Bi2Te3 thin films grown by metal organic chemical vapor deposition (MOCVD) on top of 4″ Si(111) substrates. Clear weak antilocalization (WAL) effects are observed in both TIs, proving the existence of quantum transport mechanism, and the data are successfully interpreted in the framework of the Hikami–Larkin–Nagaoka model. Further, by dedicated magnetotransport experiments, it has been confirmed that the investigated WAL …