2016 | Agrate UNIT

Towards a uniform and large-scale deposition of MoS2 nanosheets via sulfurization of ultra-thin Mo-based solid films

Silvia Vangelista, Eugenio Cinquanta, Christian Martella, Mario Alia, Massimo Longo, Alessio Lamperti, Roberto Mantovan, Francesco Basso Basset, Fabio Pezzoli, Alessandro Molle

2016-03-17

Biblio references: Volume: 27 Issue: 17 Pages: 175703

Origin: Nanotechnology

A compact T-shaped nanodevice for charge sensing of a tunable double quantum dot in scalable silicon technology

MLV Tagliaferri, A Crippa, M De Michielis, G Mazzeo, M Fanciulli, E Prati

2016-03-11

Biblio references: Volume: 380 Issue: 11-12 Pages: 1205-1209

Origin: Physics Letters A

57Fe Emission Mössbauer Spectroscopy following dilute implantation of 57Mn into In2O3

A Mokhles Gerami, K Johnston, HP Gunnlaugsson, K Nomura, R Mantovan, H Masenda, YA Matveyev, TE Mølholt, M Ncube, S Shayestehaminzadeh, I Unzueta, HP Gislason, PB Krastev10, G Langouche11, D Naidoo, S Olafsson

2016-03-02

Biblio references: Volume: 237 Issue: 1 Pages: 1

Origin: Hyp. Interact

Lattice sites, charge states and spin–lattice relaxation of Fe ions in 57 Mn+ implanted GaN and AlN

Hilary Masenda, D Naidoo, K Bharuth-Ram, HP Gunnlaugsson, K Johnston, R Mantovan, TE Mølholt, M Ncube, S Shayestehaminzadeh, HP Gíslason, Guido Langouche, S Ólafsson, G Weyer

2016-03-01

Biblio references: Volume: 401 Pages: 1130-1138

Origin: Journal of Magnetism and Magnetic Materials

Electron Confinement at the Si/MoS2 Heterosheet Interface

Alessandro Molle, Alessio Lamperti, Davide Rotta, Marco Fanciulli, Eugenio Cinquanta, Carlo Grazianetti

2016-02-23

Biblio references:

Origin: Advanced Materials Interfaces

57<//SUP> Fe Emission Mossbauer Study on Gd 3<//sub> Ga 5<//sub> O 12<//sub> implanted with dilute 57<//SUP> Mn

PB Krastev, HP Gunnlaugsson, K Nomura, V Adoons, AM Gerami, K Johnston, M Ncube, R Mantovan, H Masenda, YA Matveyev, TE Molholt, I Unzueta, K Bharuth-Ram, H Gislason, G Langouche, D Naidoo, S Olafsson

2016-02-22

Biblio references: Volume: 237 Issue: 1

Origin: HYPERFINE INTERACTIONS

MOCVD growth and structural characterization of In–Sb–Te nanowires

S Selmo, S Cecchi, R Cecchini, C Wiemer, M Fanciulli, E Rotunno, L Lazzarini, M Longo

2016-02-01

Biblio references: Volume: 213 Issue: 2 Pages: 335-338

Origin: physica status solidi (a)

Defects and Dopants in Silicon Nanowires Produced by Metal-Assisted Chemical Etching

Marco Fanciulli, Matteo Belli, Stefano Paleari, Alessio Lamperti, Mauro Sironi, Antonio Pizio

2016-01-22

Biblio references: Volume: 5 Issue: 4 Pages: P3138-P3141

Origin: ECS Journal of Solid State Science and Technology

Synthesis and characterization of P δ-layer in SiO2 by monolayer doping

Elisa Arduca, Massimo Mastromatteo, Davide De Salvador, Gabriele Seguini, Cristina Lenardi, Enrico Napolitani, Michele Perego

2016-01-20

Biblio references: Volume: 27 Issue: 7 Pages: 075606

Origin: Nanotechnology

Two-dimensional silicon: the advent of silicene

Carlo Grazianetti, Eugenio Cinquanta, Alessandro Molle

2016-01-07

Biblio references: Volume: 3 Issue: 1 Pages: 012001

Origin: 2D Materials