2007 | Agrate UNIT

Proximity effects induced by a gold layer on La 0.67 Sr 0.33 Mn O 3 thin films

Riccardo Bertacco, Stefano Brivio, Matteo Cantoni, Andrea Cattoni, Daniela Petti, Marco Finazzi, Franco Ciccacci, AA Sidorenko, M Ghidini, G Allodi, R De Renzi

2007-09-03

Biblio references: Volume: 91 Issue: 10 Pages: 102506

Origin: Applied Physics Letters

Mössbauer study of 57 Fe in CVD diamond following 57 Mn implantation

K Bharuth-Ram, VV Naicker, D Naidoo, HP Gunnlaugsson, R Mantovan, G Weyer, M Dietrich, JE Butler

2007-09-01

Biblio references: Volume: 179 Issue: 1 Pages: 17-22

Origin: Hyperfine Interactions

Oxide-nitride-oxide memory stacks formed by low-energy Si ion implantation into nitride and wet oxidation

V Ioannou-Sougleridis, P Dimitrakis, V Em Vamvakas, P Normand, Caroline Bonafos, S Schamm, Nikolay Cherkashin, G Ben Assayag, M Perego, M Fanciulli

2007-09-01

Biblio references: Volume: 84 Issue: 9-10 Pages: 1986-1989

Origin: Microelectronic engineering

Effects of thermal treatments on chemical composition and electrical properties of ultra-thin Lu oxide layers on Si

A Zenkevich, Yu Lebedinskii, S Spiga, C Wiemer, G Scarel, M Fanciulli

2007-09-01

Biblio references: Volume: 84 Issue: 9-10 Pages: 2263-2266

Origin: Microelectronic engineering

Exchange coupling between an amorphous ferromagnet and a crystalline antiferromagnet

Marian Fecioru-Morariu, Gernot Güntherodt, Manfred Rührig, Alessio Lamperti, Brian Tanner

2007-09-01

Biblio references: Volume: 102 Issue: 5 Pages: 053911

Origin: Journal of Applied Physics

[(Me3Si) 2N] 3Lu: Molecular Structure and Use as Lu and Si Source for Atomic Layer Deposition of Lu Silicate Films

G Scarel, C Wiemer, M Fanciulli, IL Fedushkin, GK Fukin, GA Domrachev, Y Lebedinskii, A Zenkevich, G Pavia

2007-09-01

Biblio references: Volume: 633 Issue: 11‐12 Pages: 2097-2103

Origin: Zeitschrift für anorganische und allgemeine Chemie

Vibrational and electrical properties of hexagonal La 2 O 3 films

Italy G. Scarel,a A. Debernardi, D. Tsoutsou, S. Spiga, S. C. Capelli, L. Lamagna, S. N. Volkos, M. Alia, and M. Fanciulli MDM National Laboratory, CNR-INFM, Agrate Brianza, Milan 20041

2007-09-01

Biblio references: Volume: 91 Issue: 102901

Origin: APPLIED PHYSICS LETTERS

Understanding of the thermal stability of the hafnium oxide/TiN stack via 2 “high k” and 2 metal deposition techniques

V Cosnier, P Besson, V Loup, L Vandroux, S Minoret, M Cassé, X Garros, JM Pedini, S Lhostis, K Dabertrand, C Morin, C Wiemer, M Perego, M Fanciulli

2007-09-01

Biblio references: Volume: 84 Issue: 9-10 Pages: 1886-1889

Origin: Microelectronic engineering

A semianalytical description of the hole band structure in inversion layers for the physically based modeling of pMOS transistors

Marco De Michielis, David Esseni, YL Tsang, Pierpaolo Palestri, Luca Selmi, Anthony G O'Neill, Sanatan Chattopadhyay

2007-08-27

Biblio references: Volume: 54 Issue: 9 Pages: 2164-2173

Origin: IEEE transactions on electron devices

Interface stability of magnetic tunnel barriers and electrodes

A Lamperti, ATG Pym, DS Eastwood, S Cardoso, P Wisniowski, PP Freitas, GIR Anderson, CH Marrows, BK Tanner

2007-08-01

Biblio references: Volume: 204 Issue: 8 Pages: 2778-2784

Origin: physica status solidi (a)

Proximity effects induced by a gold layer on La 0.67 Sr 0.33 Mn O 3 thin films

Mössbauer study of 57 Fe in CVD diamond following 57 Mn implantation

Oxide-nitride-oxide memory stacks formed by low-energy Si ion implantation into nitride and wet oxidation

Effects of thermal treatments on chemical composition and electrical properties of ultra-thin Lu oxide layers on Si

Exchange coupling between an amorphous ferromagnet and a crystalline antiferromagnet

[(Me3Si) 2N] 3Lu: Molecular Structure and Use as Lu and Si Source for Atomic Layer Deposition of Lu Silicate Films

Vibrational and electrical properties of hexagonal La 2 O 3 films

Understanding of the thermal stability of the hafnium oxide/TiN stack via 2 “high k” and 2 metal deposition techniques

A semianalytical description of the hole band structure in inversion layers for the physically based modeling of pMOS transistors

Interface stability of magnetic tunnel barriers and electrodes

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