Fe ion implantation in GaN has been investigated by means of ion beam analysis techniques. Implantations at an energy of 150keV and fluences ranging from 2× 1015 to 1× 1016cm− 2 were done, both at room temperature and at 623K. Secondary Ions Mass Spectrometry was used to determine the Fe implantation profiles, whereas Rutherford Backscattering in channeling conditions with a 2.2 MeV 4He+ beam allowed us to follow the damage evolution. Particle Induced X-ray Emission in channeling conditions with a 2MeV ...