Group IV semiconductor nanowires have been investigated experimentally and theoretically for several years. Their intriguing and yet not fully understood properties and the potential for applications in nanoelectronics, spintronics, energy harvesting, production and storage, sensors, and neuroelectronics motivate this research effort. Due to the high surface area SiNWs and GeNWs represent also a perfect material science lab to investigate with high accuracy specific issues related to defects and interfaces. The investigation of defects at ...