Atomic layer deposition of Al: ZrO 2 films on In 0.53 Ga 0.47 As substrates is shown to be a promising route to boost the oxide permittivity with respect to Al 2 O 3 gate dielectrics and concomitantly take benefit from the reducing effect of the trimethylaluminum precursor on the In 0.53 Ga 0.47 As surface. We demonstrates that increasing the number of initial Al 2 O 3 cycles in the growth sequence can improve the physical quality and the electrical response of the Al: ZrO 2/In 0.53 Ga 0.47 As interface while preserving the overall composition of the oxide.
24 Aug 2011
Volume: 4 Issue: 9 Pages: 094103
Applied physics express