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Type: 
Journal
Description: 
Deuterium (hydrogen) incorporation in dilute nitrides (eg, GaAsN and GaPN) modifies dramatically the crystal's electronic and structural properties and represents a prominent example of defect engineering in semiconductors. However, the microscopic origin of D-related effects is still an experimentally unresolved issue. In this paper, we used nuclear reaction analyses and/or channeling, high resolution x-ray diffraction, photoluminescence, and x-ray absorption fine structure measurements to determine how …
Publisher: 
American Physical Society
Publication date: 
20 Nov 2007
Authors: 

Marina Berti, Gabriele Bisognin, Davide De Salvador, Enrico Napolitani, Silvia Vangelista, Antonio Polimeni, Mario Capizzi, Federico Boscherini, Gianluca Ciatto, Silvia Rubini, Faustino Martelli, Alfonso Franciosi

Biblio References: 
Volume: 76 Issue: 20 Pages: 205323
Origin: 
Physical Review B