Type:
Journal
Description:
Deuterium (hydrogen) incorporation in dilute nitrides (eg, GaAsN and GaPN) modifies dramatically the crystal's electronic and structural properties and represents a prominent example of defect engineering in semiconductors. However, the microscopic origin of D-related effects is still an experimentally unresolved issue. In this paper, we used nuclear reaction analyses and/or channeling, high resolution x-ray diffraction, photoluminescence, and x-ray absorption fine structure measurements to determine how …
Publisher:
American Physical Society
Publication date:
20 Nov 2007
Biblio References:
Volume: 76 Issue: 20 Pages: 205323
Origin:
Physical Review B