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Type: 
Journal
Description: 
In silicon nanocrystal based metal‐oxide‐semiconductor memory structures, tuning of the electron tunneling distance between the Si substrate and Si nanocrystals located in the gate oxide is a crucial requirement for the pinpointing of optimal device architectures. In this work, we show how to manipulate and control the depth‐position and the density of 2D arrays of Si ncs embedded in thin (
Publisher: 
WILEY‐VCH Verlag
Publication date: 
1 Apr 2005
Authors: 

Nikolay Cherkashin, Caroline Bonafos, H Coffin, Marzia Carrada, S Schamm, Gérard Ben Assayag, D Chassaing, P Dimitrakis, P Normand, M Perego, M Fanciulli, T Muller, KH Heinig, Alain Claverie

Biblio References: 
Volume: 2 Issue: 6 Pages: 1907-1911
Origin: 
physica status solidi (c)