In this paper, a study of a La-based high-k oxide to be employed as blocking oxide in future non-volatile scaled memory devices is presented. Hf1-xLaxOy deposited by atomic layer deposition is considered. In order to allow the integration of this material, its chemical interaction with an Al2O3 cap layer has been studied. Moreover, the electrical characteristics have been evaluated after integration in capacitor structures. The rare earth-based ternary oxide presents promising characteristics to be a good candidate as active dielectric for non volatile memory devices.