High Resolution X-Ray Diffraction (HRXRD) was used to study the strain evolution of lattice defects formed in an array of B delta layers grown by Molecular Beam Epitaxy (MBE) and damaged by sub-amorphizing Ge self-implantation. The MBE structure was implanted at room temperature (RT) with 840keV Ge at a dose of 1.5× 1012Ge/cm2. First of all, we observed a RT strain reduction of~ 40% with respect to the strain value found in the just-implanted sample. This strain ageing phenomenon saturates in about 5months. Then, the ...