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Oxide based memristive devices: from RRAM memory to neuromorphic computing

Memristive systems represent today a disruptive technology for the semiconductor industry towards several applications such as data storage (non-volatile memories), non-volatile...

Insight into the amorphous-to-crystalline phase transition in GeTe thin films

The unique method of 57Fe emission Mössbauer spectroscopy (eMS), as performed at the large-scale facility of ISOLDE at CERN, was employed to reveal, at the most atomic-scale,...

Engineering Domain-Wall Motion in CoFeB/MgO Ultrathin Films with Perpendicular Anisotropy Using Patterned Substrates with Subnanometer Step Modulation

Controlling the motion of magnetic domain walls (DWs) in ultrathin films with perpendicular magnetic anisotropy (PMA) has opened perspectives for mass-storage applications such as “racetrack...

New set-up to perform Transmission Moessbauer Spectroscopy installed at IMM Agrate Brianza

From October 2018, the CNR-IMM Unit of Agrate Brianza is equipped with a new set-up to perform Transmission Mössbauer Spectroscopy (TMS), which has been developed in the framework of CYBER-SORT, a...

Atomic layer deposition for MOEMS and MEMS applications

Due to the high conformality, excellent thickness control, availability of dense and pinhole free films of different materials at low deposition temperature and low cost, atomic layer deposition (...

Synthesis and Investigation of Multifunctional Materials

The activity at IMM Agrate is mainly focused on the synthesis and advanced characterization of materials displaying diverse functionalities. As concerning the growth, our work is focused on the...

Materials for Spintronics

This research activity at IMM Agrate is mainly focused on the use of chemical methods such as  atomic layer deposition (ALD) and chemical vapour deposition (CVD) to synthesize materials for...

Modelling, simulation and characterization of CMOS devices for quantum information processing

CMOS technology exploitation is crucial to fabricate in a reliable manner nanodevices where different qubits based on spin degree of freedom can be implemented. One on the goals...

Investigation of silicon nanowires and silicon quantum dots for CMOS-based quantum devices

 

The activity regards characterization and simulation of transport in silicon nanostructures and nanodevices in the form of quantum dots (0D) or nanowires (1D), for extremely low-power...

Inorganic nanostructures by organic self-assembly

Development of new bottom-up approaches for the synthesis of functional nanostructured materials with typical feature dimension well below 20 nm. The focus of this research...

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