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Switching quantum transport in a three donors silicon fin-field effect transistor

Guillaume Leti, Enrico Prati, Matteo Belli, Guido Petretto, Marco Fanciulli, Maud Vinet, Romain Wacquez, Marc Sanquer

2011-12-12

Biblio references: Volume: 99 Issue: 24 Pages: 242102

Origin: Applied Physics Letters
Quantum oscillations and ferromagnetic hysteresis observed in iron filled multiwall carbon nanotubes

J Barzola-Quiquia, N Klingner, J Krüger, A Molle, P Esquinazi, A Leonhardt, MT Martinez

2011-12-08

Biblio references: Volume: 23 Issue: 1 Pages: 015707

Origin: Nanotechnology
Influence of lattice parameters on the dielectric constant of tetragonal ZrO2 and La-doped ZrO2 crystals in thin films deposited by atomic layer deposition on Ge (001)

C Wiemer, A Debernardi, A Lamperti, A Molle, O Salicio, L Lamagna, M Fanciulli

2011-12-05

Biblio references: Volume: 99 Issue: 23 Pages: 232907

Origin: Applied Physics Letters
Confinement effects and hyperfine structure in Se doped silicon nanowires

Guido Petretto, Alberto Debernardi, Marco Fanciulli

2011-11-09

Biblio references: Volume: 11 Issue: 11 Pages: 4509-4514

Origin: Nano letters
Reconstruction dependent reactivity of As-decapped In0. 53Ga0. 47As (001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition

A Molle, L Lamagna, C Grazianetti, G Brammertz, C Merckling, M Caymax, S Spiga, M Fanciulli

2011-11-07

Biblio references: Volume: 99 Issue: 19 Pages: 193505

Origin: Applied Physics Letters
Reconstruction dependent reactivity of As-decapped In 0.53<//sub> Ga 0.47<//sub> As (001) surfaces and its influence on the electrical quality of the interface with …

A Molle, L Lamagna, C Grazianetti, G Brammertz, C Merckling, M Caymax, S Spiga, M Fanciulli

2011-11-07

Biblio references: Volume: 99 Issue: 19

Origin: Applied Physics Letters
Fe/BaTiO3 interface: Band alignment and chemical properties

A Zenkevich, R Mantovan, M Fanciulli, M Minnekaev, Yu Matveyev, Yu Lebedinskii, S Thiess, W Drube

2011-10-31

Biblio references: Volume: 99 Issue: 18 Pages: 182905

Origin: Applied Physics Letters
Transitivity of band offsets between semiconductor heterojunctions and oxide insulators

VV Afanas’ ev, H-Y Chou, Michel Houssa, Andre Stesmans, L Lamagna, A Lamperti, A Molle, B Vincent, G Brammertz

2011-10-24

Biblio references: Volume: 99 Issue: 17 Pages: 172101

Origin: Applied Physics Letters
Impact of post deposition annealing in the electrically active traps at the interface between Ge (001) substrates and LaGeOx films grown by molecular beam deposition

Alessandro Molle, Silvia Baldovino, Marco Fanciulli, Dimitra Tsoutsou, Evangelos Golias, Athanasios Dimoulas

2011-10-15

Biblio references: Volume: 110 Issue: 8 Pages: 084504

Origin: Journal of Applied Physics
(Invited) Active Trap Determination at the Interface of Ge and In0. 53Ga0. 47 as Substrates with Dielectric Layers

Alessandro Molle, Silvia Baldovino, Luca Lamagna, Sabina Spiga, Alessio Lamperti, Marco Fanciulli, Dimitra Tsoutsou, Evangelos Golias, Athanasios Dimoulas, Guy Brammertz, Clement Merckling, Matty Caymax

2011-10-04

Biblio references: Volume: 41 Issue: 3 Pages: 203-221

Origin: ECS Transactions

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