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Resistive memories are promising candidates for replacing current nonvolatile memories and realize storage class memories. Moreover, they have memristive properties, with many discrete resistance levels and implement artificial synapses. The last years researchers have demonstrated RRAM chips used as accelerators in computing, following the new in-memory and neuromorphic computational approaches. Many different metal oxides have been used as resistance switching materials in MIM structures. Understanding of the switching mechanism is very critical for the modeling and the use of memristors in different applications. Here, we demonstrate the bipolar resistance switching of silicon nitride thin films using heavily doped Si and Cu as bottom and top-electrodes respectively. Next, we dope nitride with oxygen in order to introduce and modify the intrinsic nitride defects. Analysis of the current-voltage …
Publication date: 
13 Apr 2021

Nikolaos Vasileiadis, Panagiotis Karakolis, Panagiotis Mandylas, Vassilios Ioannou-Sougleridis, Pascal Normand, Michele Perego, Philomela Komninou, Vasileios Ntinas, Iosif-Angelos Fyrigos, Ioannis Karafyllidis, Georgios Ch Sirakoulis, Panagiotis Dimitrakis

Biblio References: 
Volume: 20 Pages: 356-364
IEEE Transactions on Nanotechnology