Tin sulfide is one of the most promising alternative materials for photovoltaic. One main requirement for enhancing device efficiency is high quality SnS thin films. We present our study of recrystallization of SnS thin film by post deposition treatment at high temperature with KI and SnCl 2 . A recrystallization of SnS was achieved with both KI and SnCl 2 , but it has been observed that this phenomenon occurs only when SnS film is deposited at high temperature, whereas for low temperature-SnS film the treatment process produces a mix of secondary phases into the SnS matrix.