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This chapter examines the nanoscale current distribution in single crystalline Fe:doped SrTiO3 (STO) thin films devices and linked it to chemical and microstructural changes in detail. It also examines in‐operando hard X‐ray photoelectron spectroscopy (HAXPES) studies of the resistive switching (RS) phenomenon observed in Ti/HfO2‐based systems. The chapter presents the distribution of oxygen vacancies in a switched memristor fabricated from epitaxial Fe‐doped STO by spatially resolved x‐ray absorption near‐edge structure (XANES). It focuses on the interfacial microstructure and the magnetic, transport and nanoscale switching phenomena of La1‐xSrxMnO3 (LSMO) films grown by chemical solution deposition (CSD) on SrTiO3 (STO) and LaAlO3 (LAO) single crystalline substrates. The chapter explores different resistance states of metal (Ag, Ti) ‐ manganite(La0.325Pr0.300Ca0.375MnO3) interfaces as …
Wiley‐VCH Verlag GmbH & Co. KGaA
Publication date: 
19 Jun 2012

R Dittmann, R Muenstermann, I Krug, D Park, F Kronast, A Besmehn, J Mayer, CM Schneider, Rainer Waser, Malgorzata Sowinska, Thomas Bertaud, Damian Walczyk, Sebastian Thiess, Christian Walczyk, Thomas Schroeder, Christian Lenser, Alexei Kuzmin, Aleksandr Kalinko, Juris Purans, Regina Dittmann, C Moreno, J Zabaleta, A Palau, J Gázquez, N Mestres, T Puig, C Ocal, X Obradors, Pablo Levy, N Ghenzi1, MJ Sanchez, MJ Rozenberg, P Stoliar, FG Marlasca, D Rubi, Sabina Spiga, Stefano Brivio, Grazia Tallarida, Daniele Perego, Silvia Franz, Damien Deleruyelle, Christophe Muller, Eilam Yalon, Shimon Cohen, Arkadi Gavrilov, Boris Meyler, Joseph Salzman, Dan Ritter

Biblio References: 
Pages: 233-245
Frontiers in Electronic Materials: A Collection of Extended Abstracts of the Nature Conference Frontiers in Electronic Materials, June 17th to 20th 2012, Aachen, Germany