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Thin rare earth oxide films are considered among the high dielectric constant materials candidates to substitute SiO2 layers as gate dielectrics and capacitors for advanced microelectronic devices. 1, 2 The main advantages these oxides offer reside in their high conduction band offsets (CBO) on Si and also on Ge, and on their moderately high dielectric constant (κ) values. Among the REO series, La2O3 and Lu2O3, with empty and completely filled f shell respectively, are the most promising. La2O3 stabilized in the hexagonal phase has the highest dielectric constant, κ= 27. 3 However, it is the most hygroscopic oxide of the REO series. On the contrary, Lu2O3, despite a medium value of the dielectric constant, κ= 12.5, 4 is the less hygroscopic and the less attractive to Si. 5La2O3 and Lu2O3 thin films have been prepared by atomic layer deposition (ALD) from La (C5H5) 3+ H2O and [(η5-C5H4SiMe3) 2LuCl] 2+ H2O …
IOP Publishing
Publication date: 
5 May 2008

Sylvie Schamm, Pierre-Eugène Coulon, Shu Miao, Luca Lamagna, Dimitra Tsoutsou, Stelios N Volkos, Giovanna Scarel, Marco Fanciulli

Biblio References: 
Issue: 16 Pages: 626
ECS Meeting Abstracts