We present first principles calculations of Mn-doped GaN/AlN(0001) heterostructures obtained within the framework of density functional theory by using plane wave pseudopotential techniques. We found that for diluted Mn concentration this system present an integer magnetization that is a fingerprint of half-metallic property; this suggests the possibility to use this junction as a spin injector.
1 Oct 2006
Volume: 40 Issue: 4-6 Pages: 530-532
Superlattices and Microstructures