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Type: 
Book
Description: 
The interfaces between high-κ dielectrics, grown by atomic layer deposition, and semiconductors have been characterized using various electrically detected magnetic resonance spectroscopy techniques. The dominant center at the interface was found to be Pb0-like. Microwave contactless photoconductive resonance and defect-assisted spin dependent tunneling spectroscopies, performed at low temperatures, reveal also a signal which could be related to E’-like near interfacial oxide traps.
Publisher: 
Springer, Dordrecht
Publication date: 
1 Jan 2006
Authors: 

MARCO FANCIULLI, OMAR COSTA, SILVIA BALDOVINO, SIMONE COCCO, GABRIELE SEGUINI, ENRICO PRATI, GIOVANNA SCAREL

Biblio References: 
Pages: 263-276
Origin: 
Defects in High-k Gate Dielectric Stacks