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Type: 
Conference
Description: 
In this article, a novel method of creating p- and n-type Si-NWs FETs by employing undoped NWs as the active region, is presented. This method does not require doping, but takes advantage of the inherent NW geometry and simply relies on the electrostatic control of the bands near the source- and drain- (S/D) contacts.
Publisher: 
IEEE
Publication date: 
18 Aug 2008
Authors: 

Walter M Weber, Lutz Geelhaar, Luca Lamagna, Marco Fanciulli, Franz Kreupl, Eugen Unger, Henning Riechert, Giuseppe Scarpa, Paolo Lugli

Biblio References: 
Pages: 580-581
Origin: 
2008 8th IEEE Conference on Nanotechnology