The multiple resistive switching of Pt/HfO2/TiN devices is demonstrated as a result of a competition between the switching at opposite metal/oxide interfaces. Three switching operation modes are demonstrated: clockwise (CW) switching (set for negative voltage and reset for positive voltage at Pt electrode), as already reported in literature for similar material stacks; counterclockwise (CCW) switching and complementary switching (CS) that consist in a set and a reset for increasing voltage of the same polarity. The multiple switching operation modes are enabled by a deep-reset operation that brings the cell resistance close to the initial one. As a consequence, the set transition after a deep-reset occurs at the same voltage and currents as those of the forming and leads to a low resistance state whose resistance can be further decreased in a CCW switching or increased back with a CW switching. With a suitable choice …