The synthesis and the characterization of dielectrics with very high and very low relative permittivity κ, are one of the challenges for scaling the dimensions of microelectronic devices. It will be shown that unique and useful insight on high κ thin films and about the surface termination of internal buried empty space (κ= 1) can be obtained by combining different positron annihilation spectroscopies. Characterization of nano-cavities in Si and of HfO 2 high κ thin films will be presented and discussed.
1 Feb 2007
Volume: 76 Issue: 2 Pages: 189-194
Radiation Physics and Chemistry