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Type: 
Journal
Description: 
We report electronic transport on silicon double and triple dots created with the optimized number of two gates. Using silicon nitride spacers two dots in series are created below two top gates overlapping a silicon nanowire. Coupling between dots is controlled by gate voltages. A third dot is created either by combined action of gate voltages or local doping depending on the spacers length. The main characteristics of the triple dot stability diagram are quantitatively fitted.
Publisher: 
American Institute of Physics
Publication date: 
14 Dec 2009
Authors: 

Mathieu Pierre, Romain Wacquez, Benoit Roche, Xavier Jehl, Marc Sanquer, Maud Vinet, Enrico Prati, Matteo Belli, Marco Fanciulli

Biblio References: 
Volume: 95 Issue: 24 Pages: 242107
Origin: 
Applied physics letters