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Alessandro Molle

Contact information

Address: Alessandro Molle,
Laboratorio MDM, IMM-CNR
via Olivetti 2, 20864
Agrate Brianza (MB), Italy
Contacts: office: +39 039-6032884
fax: +39 039-6881175
email: Alessandro [dot] Molle [at] mdm [dot] imm [dot] cnr [dot] it

Alessandro Molle graduated in 2001 at the University of Genova (Italy) with a master thesis on the nanocrystal formation during the homoepitaxial growth Al/Al(110). He obtained the PhD degree in Materials Science at the same University in April, 2005 with a thesis on the sputter-induced fabrication of periodic and nanoscaled patterns on fcc (110) metal surfaces after spending several beam times at the European Synchrotron Radiation Facility (ESRF) in Grenoble within a long-term project. Beside the Synchrotron Radiation techniques, he deeply investigated the surface morphology of the nanostructures by means of High Resolution Spot Profile Analysis Low Energy Electron Diffraction (SPA-LEED). In February 2005, he joined the MDM National Laboratory as a Post-Doc Fellow involved in the Molecular Beam Epitaxial Growth of high-k oxide thin films on semiconductor and of semiconductor thin films on metal oxides within the European Project ET4US. His activity was also related to the in situ structural and chemical characterization of thin films by means of Reflection High Energy Reflection (RHEED), X-ray Photoelectron Spectroscopy (XPS) and Low Energy Ion Scattering Spectroscopy (LEISS). He was then involved in the surface passivation of highmobility semiconductors sich as Ge and III-V compunds, for the subsequent deposition of high-k materials targeting ultra-scaled metal oxide semiconductor (MOS) structures for a Post-Si era of digital devices. The research activity concerned with the III-V compunds was carried on in direct collaboration with IMEC (Belgium) in the framework of the bilateral collaboration projects ATHOS and ARAMIS. In 2010, he co-chaired the Symposium H "Post-Si CMOS electronic devices: the role of Ge and III-V materials" at the E-MRS 2010 Spring Meeting in Strasbourg and he is about to chair the Symposium I "The route to Post-Si CMOS devices: from high-mobility channels to graphene-like nanosheets" at the E-MRS 2013 Spring Meeting. He is going to be co-editor of a book entitled "2D materials for nanoelectronics" to be published by Taylor&Francis (CRC Press).

He was the principal investigator at CNR-IMM in the research activity related to the European Project "2D-Nanolattices: Strongly Anisotropic Graphite-like Semiconductor-Dielectric 2D Nanolattices" started from June 1st, 2011.The core-idea of this activity is to identify the basic properties of the epitaxial silicene, namely the silicon counterpart of graphene, including the structural arrangement, the elelctronic state, and the vibrational spectrum. Integration of epitaxial silicene in a field effect transistor has been achieved in collaboration with the group of Prof. Akinwande, Univ. of Texas at Austin. From 2014 he is  group leader of th CNR reserach line on Low Dimensional Materials and Devices and he is scientific coordinator of a CNR grant for a joint lab collaboration with the University of Texas at Austin. 

He is author and co-athor of more than 65 peer-reviewed articles in international scientific journals, he received 10 invitations to international conferences (including ECS meeting, AVS meeting, SSDM conference) for his contributions to the Ge/III-V issues and 2D materials issues, and he played the role of scientific reviewer for European universities and institutions.


"Silicene field-effect-transistors operating at room temperature"