Open Positions | Istituto per la Microelettronica e Microsistemi: Sezione di Agrate Brianza

Open Positions

Electron-beam lithography processing of silicon nano-devices for the investigation of the electronic properties of confined electrons due to donors and/or electrostatically defined quantum dots

Position: 1 researcher

Description:
Processing in clean-room of silicon and germanium: optical lithography, e-beam lithography, metal and oxide thin film deposition, doping and magneto-transport measurements.

Appointment period: 12 mounths with possibility of extension

Application deadline: 28/05/2012

Bando IMM_001_2012_MB.pdf

Contact: Marco Fanciulli
+39 039-6036253

Marco [dot] Fanciulli [at] mdm [dot] imm [dot] cnr [dot] it
Development of continuous wave and pulsed electrically detected spin resonance techniques for the investigation of donors in semiconductors nanostructures

Position: 1 Post Doc

Description:
The experimental work is related to the development of continuous wave and pulsed electrically detected spin resonance techniques for the investigation, in a broad frequency range, of donors in semiconductor (Si, Ge) nanostructures.

Appointment period: 12 months, with possibility of extension for additional 12 months

Contact: Marco Fanciulli
+39 039-6036253

Marco [dot] Fanciulli [at] mdm [dot] imm [dot] cnr [dot] it
Electrical characterization of quantum transport at cryogenic temperature

Position: 1 Post Doc

Description:
The experimental work is related to the quantum transport activity of the group, based on the silicon quantum dots fabricated in our clean room. The activity consists in the use of cryogenic facilities (300 mK) for the characterization of the single electron / single atom transistors and the development of low temperature amplification system with low noise and wide band.

Appointment period: 12 months, with possibility of extension for additional 12 months

Contact: Enrico Prati
+39 039-6037991

Enrico [dot] Prati [at] mdm [dot] imm [dot] cnr [dot] it
Ex situ characterization of two-dimenasional nanollatices of silicene, germanene, and dielectrics

Position: Post-Doc / Research Associate

Description:
A Post-Doc / Research Associate position will be soon available which will be concerned with the ex situ characterization of two dimensional (2D) silicon, germanium,and dielectric layers supplied In the framework of the EU Project 2D-Nanolattices ("Strongly anisotropic Graphite-like semiconductor/dielectric 2D", grant agreement no: 270749). The identification of the Raman spectrum of the 2D nanolattices will be the main objective of the research activity which will be associated with a parallel investigation of the chemical, physical, and electrical properties of the layers. To this scope, techniques ranging from XPS, XRD, Hall effect measurements, other electrical characterization, and magnetic resonance spectroscopy will be taken into account. The ex situ characterization will be provided either on on-site grown samples and on samples coming from other partners of the project and it will be intended to give a necessary feedback for the material optimization.

Appointment period: 12 months, with possibility of extension upon mutual agreement

Application deadline: 30/10/2011

Contact: Alessandro Molle
+39 039-6032884

Alessandro [dot] Molle [at] mdm [dot] imm [dot] cnr [dot] it
Molecular beam epitaxy and in situ characterization of 2D-layered materials (silicene, germanene, and 2D-dielectrics)

Position: Post-Doc

Description:
In the framework of the EU Project 2D-Nanolattices ("Strongly anisotropic Graphite-like semiconductor/dielectric 2D", grant agreement no: 270749), a Post-Doc position will be soon available which will be concerned with the growth of silicene and germanene layers on metal substrates and on artificially engineered graphene-like dielectrics by means of an Omicron UHV molecular beam epitaxy apparatus. In situ characterization via scanning probe techniques (VT-STM/STS, AFM, KPFM), electron diffraction, and x-ray photoelectron spectroscopy will be included in the research activity with the aim to unequivocally identify the formation of a silicene or germanene layer.

Appointment period: 12 months, with possibility of extension upon mutual agreement

Application deadline: 30/10/2011

Contact: Alessandro Molle
+39 039-6032884

Alessandro [dot] Molle [at] mdm [dot] imm [dot] cnr [dot] it
Fabrication and characterization of ReRAM devices based on metal/oxide/metal thin film and nanowire-heterostructures

Position: 1 Post Doc and 1 Post-laurea

Description:
The open positions are in the framework of the Project MORE "Advanced Metal-Oxide heterostructures for nanoscale ReRAM&", funded by CARIPLO. The experimental activity will be related to the characterization of the resistive switching properties of metal/oxide/metal thin films and nanowire heterostrucutres using conductive-AFM analysis and standard electrical characterization. Device Fabrication using optical and e-beam lithography will be also a part of the activity.

Appointment period: 12 months, with possibility of extension for additional 12 months

Contact: Sabina Spiga
+39 039-6035938

Sabina [dot] Spiga [at] mdm [dot] imm [dot] cnr [dot] it
Fabrication and characterization of MOS capacitors based on In0.53Ga0.47As and GaAs substrates

Position: Post-Doctoral

Description:
The activity targets interface engineering of III-V compounds (In053Ga0.47As, GaAs) surfaces with high-k dielectrics in the framework of an international collaboration project with IMEC (Belgium). Optimization of the interfaces will be carried out either with chemical treatment and with UHV processing in a MBE chamber. Assessment of the interface quality will be based on the electrical response of selected MOS capacitors (C-V, I-V, admittance spectroscopy).

Appointment period: 12 months

Contact: Alessandro Molle
+39 039-6032884

Alessandro [dot] Molle [at] mdm [dot] imm [dot] cnr [dot] it
Growth and characterization of thin passivation oxide for photovoltaic application

Position: Post doctoral, PhD student

Description:
The activity will focus on the growth by atomic layer deposition (ALD) and subsequent characterization of high-k oxides to be used as passivation layers in photovoltaic cells. Chemical and/or structural characterization tools will be used to qualify the deposited thin films. The activity will be performed in the framework of the European project NanoPV (01/03/2011-28/02/2014).

Appointment period: 12 months, with possibility of extension upon mutual agreement

Contact: Michele Perego
+39 039-6036383

Michele [dot] Perego [at] mdm [dot] imm [dot] cnr [dot] it


	Open Positions Electron-beam lithography processing of silicon nano-devices for the investigation of the electronic properties of confined electrons due to donors and/or electrostatically defined quantum dots Position: 1 researcher Description: Processing in clean-room of silicon and germanium: optical lithography, e-beam lithography, metal and oxide thin film deposition, doping and magneto-transport measurements. Appointment period: 12 mounths with possibility of extension Application deadline: 28/05/2012 Bando IMM_001_2012_MB.pdf Contact: Marco Fanciulli +39 039-6036253 Marco [dot] Fanciulli [at] mdm [dot] imm [dot] cnr [dot] it Development of continuous wave and pulsed electrically detected spin resonance techniques for the investigation of donors in semiconductors nanostructures Position: 1 Post Doc Description: The experimental work is related to the development of continuous wave and pulsed electrically detected spin resonance techniques for the investigation, in a broad frequency range, of donors in semiconductor (Si, Ge) nanostructures. Appointment period: 12 months, with possibility of extension for additional 12 months Contact: Marco Fanciulli +39 039-6036253 Marco [dot] Fanciulli [at] mdm [dot] imm [dot] cnr [dot] it Electrical characterization of quantum transport at cryogenic temperature Position: 1 Post Doc Description: The experimental work is related to the quantum transport activity of the group, based on the silicon quantum dots fabricated in our clean room. The activity consists in the use of cryogenic facilities (300 mK) for the characterization of the single electron / single atom transistors and the development of low temperature amplification system with low noise and wide band. Appointment period: 12 months, with possibility of extension for additional 12 months Contact: Enrico Prati +39 039-6037991 Enrico [dot] Prati [at] mdm [dot] imm [dot] cnr [dot] it Ex situ characterization of two-dimenasional nanollatices of silicene, germanene, and dielectrics Position: Post-Doc / Research Associate Description: A Post-Doc / Research Associate position will be soon available which will be concerned with the ex situ characterization of two dimensional (2D) silicon, germanium,and dielectric layers supplied In the framework of the EU Project 2D-Nanolattices ("Strongly anisotropic Graphite-like semiconductor/dielectric 2D", grant agreement no: 270749). The identification of the Raman spectrum of the 2D nanolattices will be the main objective of the research activity which will be associated with a parallel investigation of the chemical, physical, and electrical properties of the layers. To this scope, techniques ranging from XPS, XRD, Hall effect measurements, other electrical characterization, and magnetic resonance spectroscopy will be taken into account. The ex situ characterization will be provided either on on-site grown samples and on samples coming from other partners of the project and it will be intended to give a necessary feedback for the material optimization. Appointment period: 12 months, with possibility of extension upon mutual agreement Application deadline: 30/10/2011 Contact: Alessandro Molle +39 039-6032884 Alessandro [dot] Molle [at] mdm [dot] imm [dot] cnr [dot] it Molecular beam epitaxy and in situ characterization of 2D-layered materials (silicene, germanene, and 2D-dielectrics) Position: Post-Doc Description: In the framework of the EU Project 2D-Nanolattices ("Strongly anisotropic Graphite-like semiconductor/dielectric 2D", grant agreement no: 270749), a Post-Doc position will be soon available which will be concerned with the growth of silicene and germanene layers on metal substrates and on artificially engineered graphene-like dielectrics by means of an Omicron UHV molecular beam epitaxy apparatus. In situ characterization via scanning probe techniques (VT-STM/STS, AFM, KPFM), electron diffraction, and x-ray photoelectron spectroscopy will be included in the research activity with the aim to unequivocally identify the formation of a silicene or germanene layer. Appointment period: 12 months, with possibility of extension upon mutual agreement Application deadline: 30/10/2011 Contact: Alessandro Molle +39 039-6032884 Alessandro [dot] Molle [at] mdm [dot] imm [dot] cnr [dot] it Fabrication and characterization of ReRAM devices based on metal/oxide/metal thin film and nanowire-heterostructures Position: 1 Post Doc and 1 Post-laurea Description: The open positions are in the framework of the Project MORE "Advanced Metal-Oxide heterostructures for nanoscale ReRAM&", funded by CARIPLO. The experimental activity will be related to the characterization of the resistive switching properties of metal/oxide/metal thin films and nanowire heterostrucutres using conductive-AFM analysis and standard electrical characterization. Device Fabrication using optical and e-beam lithography will be also a part of the activity. Appointment period: 12 months, with possibility of extension for additional 12 months Contact: Sabina Spiga +39 039-6035938 Sabina [dot] Spiga [at] mdm [dot] imm [dot] cnr [dot] it Fabrication and characterization of MOS capacitors based on In0.53Ga0.47As and GaAs substrates Position: Post-Doctoral Description: The activity targets interface engineering of III-V compounds (In053Ga0.47As, GaAs) surfaces with high-k dielectrics in the framework of an international collaboration project with IMEC (Belgium). Optimization of the interfaces will be carried out either with chemical treatment and with UHV processing in a MBE chamber. Assessment of the interface quality will be based on the electrical response of selected MOS capacitors (C-V, I-V, admittance spectroscopy). Appointment period: 12 months Contact: Alessandro Molle +39 039-6032884 Alessandro [dot] Molle [at] mdm [dot] imm [dot] cnr [dot] it Growth and characterization of thin passivation oxide for photovoltaic application Position: Post doctoral, PhD student Description: The activity will focus on the growth by atomic layer deposition (ALD) and subsequent characterization of high-k oxides to be used as passivation layers in photovoltaic cells. Chemical and/or structural characterization tools will be used to qualify the deposited thin films. The activity will be performed in the framework of the European project NanoPV (01/03/2011-28/02/2014). Appointment period: 12 months, with possibility of extension upon mutual agreement Contact: Michele Perego +39 039-6036383 Michele [dot] Perego [at] mdm [dot] imm [dot] cnr [dot] it Home People Activities Facilities Collaborations Projects Publications Conferences Open Positions News Contacts