Facilities | Istituto per la Microelettronica e Microsistemi: Sezione di Agrate Brianza

Advanced Materials Growth and Process Facilities

120 m2 clean room class 1000
Atomic layer deposition (ALD) with O3 line (4" wafers)
Atomic layer deposition (ALD) with O3 line (8" wafers)
Molecular beam epitaxy (MBE) equipped with O source
Metallorganic chemical vapour deposition (MOCVD)
Omicron Multiprobe Molecular Beam Epitaxy growth facility with UHV XPS/AFM/STM/LEIS/RHEED in-situ characterisation
Thermal and e-beam evaporator
Wet bench for wafers cleaning
Rapid Thermal Processing (RTP) system and furnace annealing systems
Photo-lithography
Electron-beam lithography
Thermal and e-beam evaporator
X-ray irradiation

Characterization Facilities

Scanning probes in air or controlled atmosphere: AFM, STM, MFM/EFM, SCFM, KPFM, SThM, SNOM
Scanning probes in UHV and at variable temperature (25-1200 K): AFM, STM, KPFM, BEEM
X-ray diffraction (XRD) and reflectivity (XRR)
Total reflection X-ray fluorescence (TXRF) and reflectivity (XRR)
X-ray photoelectron spectroscopy (XPS)
Low-energy ion scattering spectroscopy (LEIS)
Scanning Electron Microscopy (SEM)
Electrical Characterisation (0.3-500K): I-V, C-V, G-V, C-t, DLTS, Laplace-DLTS, Noise, IPE, IETS, Hall effect
ToF-SIMS (Access to STMicroelectronics system)
Micro-Raman with excitation in the visible (488 nm, 633 nm)
Micro-Raman with excitation in the UV (347 nm)
Photoluminescence (PL) spectroscopy
Spectroscopic ellipsometry
Fourier-transform Infrared Spectroscopy (FTIR) (middle- and far-IR)
Electron Spin Resonance Spectroscopy (ESR) (0.3-600K): X-band and Q-band CW-ESR, FT-EPR, EDMR, ENDOR, Multi-frequency EDMR
(119Sn, 57Fe) Conversion Electron Mössbauer Spectroscopy (CEMS)
High Power Microwave Source 1-40 GHz
12T Superconducting Cryomagnet 270mK Cryostat

Computational Facilities

6 nodes of a 32 node cluster E4-InﬁniNode (2 CPU AMD Opteron 250, 4 GB di RAM) located at the National supercomputer facility CASPUR


	Advanced Materials Growth and Process Facilities 120 m2 clean room class 1000 Atomic layer deposition (ALD) with O3 line (4" wafers) Atomic layer deposition (ALD) with O3 line (8" wafers) Molecular beam epitaxy (MBE) equipped with O source Metallorganic chemical vapour deposition (MOCVD) Omicron Multiprobe Molecular Beam Epitaxy growth facility with UHV XPS/AFM/STM/LEIS/RHEED in-situ characterisation Thermal and e-beam evaporator Wet bench for wafers cleaning Rapid Thermal Processing (RTP) system and furnace annealing systems Photo-lithography Electron-beam lithography Thermal and e-beam evaporator X-ray irradiation Characterization Facilities Scanning probes in air or controlled atmosphere: AFM, STM, MFM/EFM, SCFM, KPFM, SThM, SNOM Scanning probes in UHV and at variable temperature (25-1200 K): AFM, STM, KPFM, BEEM X-ray diffraction (XRD) and reflectivity (XRR) Total reflection X-ray fluorescence (TXRF) and reflectivity (XRR) X-ray photoelectron spectroscopy (XPS) Low-energy ion scattering spectroscopy (LEIS) Scanning Electron Microscopy (SEM) Electrical Characterisation (0.3-500K): I-V, C-V, G-V, C-t, DLTS, Laplace-DLTS, Noise, IPE, IETS, Hall effect ToF-SIMS (Access to STMicroelectronics system) Micro-Raman with excitation in the visible (488 nm, 633 nm) Micro-Raman with excitation in the UV (347 nm) Photoluminescence (PL) spectroscopy Spectroscopic ellipsometry Fourier-transform Infrared Spectroscopy (FTIR) (middle- and far-IR) Electron Spin Resonance Spectroscopy (ESR) (0.3-600K): X-band and Q-band CW-ESR, FT-EPR, EDMR, ENDOR, Multi-frequency EDMR (119Sn, 57Fe) Conversion Electron Mössbauer Spectroscopy (CEMS) High Power Microwave Source 1-40 GHz 12T Superconducting Cryomagnet 270mK Cryostat Computational Facilities 6 nodes of a 32 node cluster E4-InﬁniNode (2 CPU AMD Opteron 250, 4 GB di RAM) located at the National supercomputer facility CASPUR Home People Activities Facilities Collaborations Projects Publications Conferences Open Positions News Contacts